Abstract: An alloy having a formula FeaCobNicCudMeSifBgXh is provided. M is at least one of V, Nb, Ta, Ti, Mo, W, Zr, Cr, Mn and Hf; a, b, c, d, e, f, g are in at. %; X denotes impurities and optional elements P, Ge and C; and a, b, c, d, e, f, g, h satisfy the following: 0?b?4, 0?c<4, 0.5?d?2, 2.5?e?3.5, 14.5?f?16, 6?g?7, h<0.5, and 1?(b+c)?4.5, where a+b+c+d+e+f+g=100. The alloy has a nanocrystalline microstructure, a saturation magnetostriction of |?s|?1 ppm, a hysteresis loop with a central linear part, and a permeability (?) of 10,000 to 15,000.

Abstract: An alloy is provided which consists of Fe100-a-b-c-d-x-y-zCuaNbbMcTdSixByZz and up to 1 at % impurities, M being one or more of the elements Mo, Ta and Zr, T being one or more of the elements V, Mn, Cr, Co and Ni, Z being one or more of the elements C, P and Ge, 0 at %?a<1.5 at %, 0 at %?b<2 at %, 0 at %?(b+c)<2 at %, 0 at %?d<5 at %, 10 at %<x<18 at %, 5 at %<y<11 at % and 0 at %?z<2 at %. The alloy is configured in tape form and has a nanocrystalline structure in which at least 50 vol % of the grains have an average size of less than 100 nm, a hysteresis loop with a central linear region, a remanence ratio Jr/Js of <0.1 and a coercive field strength Hc to anisotropic field strength Ha ratio of <10%.

Abstract: An alloy is provided which consists of Fe100?a?b?c?d?x?y?zCuaNbbMc TdSixByZz and up to 1 at % impurities, M being one or more of the elements Mo, Ta and Zr, T being one or more of the elements V, Mn, Cr, Co and Ni, Z being one or more of the elements C, P and Ge, 0 at %?a<1.5 at %, 0 at %?b<2 at %, 0 at %?(b+c)<2 at %, 0 at %?d<5 at %, 10 at %<x<18 at %, 5 at %<y<11 at % and 0 at %?z<2 at %. The alloy is configured in tape form and has a nanocrystalline structure in which at least 50 vol % of the grains have an average size of less than 100 nm, a hysteresis loop with a central linear region, a remanence ratio Jr/Js of <0.1 and a coercive field strength Hc to anisotropic field strength Ha ratio of <10%.

Abstract: An alloy having a formula FeaCobNicCudMeSifBgXh is provided. M is at least one of V, Nb, Ta, Ti, Mo, W, Zr, Cr, Mn and Hf; a, b, c, d, e, f, g are in at. %; X denotes impurities and optional elements P, Ge and C; and a, b, c, d, e, f, g, h satisfy the following: 0?b?4, 0?c<4, 0.5?d?2, 2.5?e?3.5, 14.5?f?16, 6?g?7, h<0.5, and 1?(b+c)?4.5, where a+b+c+d+e+f+g=100. The alloy has a nanocrystalline microstructure, a saturation magnetostriction of |?s|?1 ppm, a hysteresis loop with a central linear part, and a permeability (?) of 10,000 to 15,000.

Abstract: An alloy is provided which consists of Fe100-a-b-c-d-x-y-zCuaNbbMcTdSixByZz and up to 1 at % impurities, M being one or more of the elements Mo, Ta and Zr, T being one or more of the elements V, Mn, Cr, Co and Ni, Z being one or more of the elements C, P and Ge, 0 at %?a<1.5 at %, 0 at %?b<2 at %, 0 at %?(b+c)<2 at %, 0 at %?d<5 at %, 10 at %<x<18 at %, 5 at %<y<11 at % and 0 at %?z<2 at %. The alloy is configured in tape form and has a nanocrystalline structure in which at least 50 vol % of the grains have an average size of less than 100 nm, a hysteresis loop with a central linear region, a remanence ratio Jr/Js of <0.1 and a coercive field strength Hc to anisotropic field strength Ha ratio of <10%.

Abstract: An alloy is provided which consists of Fe100-a-b-c-d-x-y-zCuaNbbMcTdSixByZz and up to 1 at % impurities, M being one or more of the elements Mo, Ta and Zr, T being one or more of the elements V, Mn, Cr, Co and Ni, Z being one or more of the elements C, P and Ge, 0 at %?a<1.5 at %, 0 at %?b<2 at %, 0 at %?(b+c)<2 at %, 0 at %?d<5 at %, 10 at %<x<18 at %, 5 at %<y<11 at % and 0 at %?z<2 at %. The alloy is configured in tape form and has a nanocrystalline structure in which at least 50 vol % of the grains have an average size of less than 100 nm, a hysteresis loop with a central linear region, a remanence ratio Jr/Js of <0.1 and a coercive field strength Hc to anisotropic field strength Ha ratio of <10%.

Abstract: An alloy is provided which consists of Fe100-a-b-c-d-x-y-zCuaNbbMcTdSixByZz and up to 1 at % impurities, M being one or more of the elements Mo, Ta and Zr, T being one or more of the elements V, Mn, Cr, Co and Ni, Z being one or more of the elements C, P and Ge, 0 at %?a<1.5 at %, 0 at %?b<2 at %, 0 at %?(b+c)<2 at %, 0 at %?d<5 at %, 10 at %<x<18 at %, 5 at %<y<11 at % and 0 at %?z<2 at %. The alloy is configured in tape form and has a nanocrystalline structure in which at least 50 vol % of the grains have an average size of less than 100 nm, a hysteresis loop with a central linear region, a remanence ratio Jr/Js of <0.1 and a coercive field strength Hc to anisotropic field strength Ha ratio of <10%.