Abstract: Some data storage devices have a plurality of memory dies that can be read in parallel for certain types of read requests. Read requests pertaining to a garbage collection operation are often generated sequentially and, thus, are not eligible for parallel execution in the memory dies. In an example data storage device presented herein, such read requests are consolidated and sent to the memory for execution in parallel across the memory dies.

Abstract: Some data storage devices have a plurality of memory dies that can be read in parallel for certain types of read requests. Read requests pertaining to a garbage collection operation are often generated sequentially and, thus, are not eligible for parallel execution in the memory dies. In an example data storage device presented herein, such read requests are consolidated and sent to the memory for execution in parallel across the memory dies.

Abstract: Apparatuses, systems, and methods for low latency parity for a memory device include a controller configured to accumulate, in a memory buffer, combined parity data for a plurality of regions of memory of a memory device in response to write operations for the plurality of regions of memory. The controller is configured to perform a recovery operation for a region of memory in response to determining that a latency setting for the region satisfies a latency threshold. The controller is configured to service a read request for data from the region based on a recovery operation to satisfy the latency setting.

Abstract: Technology is disclosed for relocating data in a non-volatile storage system. An integrated memory assembly has a control die and a memory die that contains the memory cells. The control die contains control circuitry that relocates data from one set of physical addresses on the memory die to another set of physical addresses on the memory die. This relocation results in a change of a mapping between logical addresses for the data and the physical addresses for the data. The control circuitry may update an L2P table on the memory die after the relocation to map the logical addresses of the data to the second set of physical addresses. The control die may construct a validity bitmap, which specifies whether data at a physical address is valid or invalid. The foregoing reduces data transfer between the integrated memory assembly and a memory controller, which saves time and power.

Abstract: Apparatuses, systems, and methods for low latency parity for a memory device include a controller configured to accumulate, in a memory buffer, combined parity data for a plurality of regions of memory of a memory device in response to write operations for the plurality of regions of memory. The controller is configured to perform a recovery operation for a region of memory in response to determining that a latency setting for the region satisfies a latency threshold. The controller is configured to service a read request for data from the region based on a recovery operation to satisfy the latency setting.

Abstract: Technology is disclosed for relocating data in a non-volatile storage system. An integrated memory assembly has a control die and a memory die that contains the memory cells. The control die contains control circuitry that relocates data from one set of physical addresses on the memory die to another set of physical addresses on the memory die. This relocation results in a change of a mapping between logical addresses for the data and the physical addresses for the data. The control circuitry may update an L2P table on the memory die after the relocation to map the logical addresses of the data to the second set of physical addresses. The control die may construct a validity bitmap, which specifies whether data at a physical address is valid or invalid. The foregoing reduces data transfer between the integrated memory assembly and a memory controller, which saves time and power.

Abstract: A non-volatile storage system includes a memory controller connected to an integrated memory assembly. The integrated memory assembly includes a memory die comprising non-volatile memory cells and a control die bonded to the memory die. The memory controller receives commands from a host, performs logical address to physical address translation (“address translation”) operations for the commands, and instructs the integrated memory assembly to perform one or more operations in support of the command. The control die also includes the ability to perform the address translation. When performing a command from the host, the memory controller can choose to perform the necessary address translation or instruct the control die to perform the address translation. When the control die performs the address translation, the resulting physical address is used by the control die to perform one or more operations in support of the command.

Abstract: A method, an apparatus, and a system for data address management in non-volatile memory. Write data is allocated to each of a plurality of multi-level pages configured for storage on a page of a non-volatile memory array. A digest is associated with the write data of one multi-level page based on an attribute for that multi-level page. This attribute differs from the attributes of at least one of the other multi-level pages. An amount of redundancy data to be stored with write data on the multi-level page is reduced to account for the associated digest. A digest may be distributed among a plurality of ECC codewords of a multi-level page. The reduced redundancy data, the digest, and the write data for the multi-level page are stored on the page along with the write data for each of the other multi-level pages of the plurality of multi-level pages.

Abstract: A non-volatile storage system includes a memory controller connected to an integrated memory assembly. The integrated memory assembly includes a memory die comprising non-volatile memory cells and a control die bonded to the memory die. The memory controller receives commands from a host, performs logical address to physical address translation (“address translation”) operations for the commands, and instructs the integrated memory assembly to perform one or more operations in support of the command. The control die also includes the ability to perform the address translation. When performing a command from the host, the memory controller can choose to perform the necessary address translation or instruct the control die to perform the address translation. When the control die performs the address translation, the resulting physical address is used by the control die to perform one or more operations in support of the command.

Abstract: A method, an apparatus, and a system for data address management in non-volatile memory. Write data is allocated to each of a plurality of multi-level pages configured for storage on a page of a non-volatile memory array. A digest is associated with the write data of one multi-level page based on an attribute for that multi-level page. This attribute differs from the attributes of at least one of the other multi-level pages. An amount of redundancy data to be stored with write data on the multi-level page is reduced to account for the associated digest. A digest may be distributed among a plurality of ECC codewords of a multi-level page. The reduced redundancy data, the digest, and the write data for the multi-level page are stored on the page along with the write data for each of the other multi-level pages of the plurality of multi-level pages.

Abstract: The present invention describes the method of using a synthetic organoselenium compound, DSePA for management of non-small cell lung carcinoma (NSCLC) and chronic myelogenous leukemia (CML). The method comprises administering DSePA orally at a dosage of 1 mg/Kg body weight daily for inhibiting the growth of A549 (representative of NSCLC) and K562 (representative of CML) tumor in mice models. Additionally, the said compound also inhibits the proliferation of other cancer cells of NSCLC (HOP-62 and H460), breast (MDA-MB-231), white blood cells (JURKAT and U-937), oral (SCC-40), colon (HT-29), kidney (A498) and cervix (SiHA) origins in cellular models at a much lower concentration than that needed to inhibit the growth of normal cells.

Abstract: A system and method for managing multiple file systems on a single non-volatile memory system is described. The system may include a non-volatile memory system with non-volatile memory having first and second file systems, each associated with respective files, and having a common pool of free space. The controller may be configured to update a file system to be mounted to reflect a capacity relating to only the respective files for that file system and all of the common pool of free space, while hiding from the host the file system not being mounted. The method may include the controller only presenting a single file system and hiding the unmounted file system, or may include the controller managing multiple file systems by presenting multiple file systems concurrently.

Abstract: Storage devices, and methods for use therewith, are described herein. Such storage devices can include flash memory, random access memory (RAM), and a memory controller in communication therewith. To improve write performance, the memory controller is configured to store first and second data, corresponding to consecutive unaligned first and second write commands received within a threshold amount of time of one another from a host, sequentially relative to one another within the flash memory. This can involve temporarily storing a tail portion of the first data in the RAM until after a front portion of the first data is stored in the flash memory, and thereafter (after the second write command is received) using the tail portion of the first data to pre-pad a front portion of the second data when the second data is being stored in the flash memory.

Abstract: Storage devices, and methods for use therewith, are described herein. Such storage devices can include flash memory, random access memory (RAM), and a memory controller in communication therewith. To improve write performance, the memory controller is configured to store first and second data, corresponding to consecutive unaligned first and second write commands received within a threshold amount of time of one another from a host, sequentially relative to one another within the flash memory. This can involve temporarily storing a tail portion of the first data in the RAM until after a front portion of the first data is stored in the flash memory, and thereafter (after the second write command is received) using the tail portion of the first data to pre-pad a front portion of the second data when the second data is being stored in the flash memory.

Abstract: A system and method for managing multiple file systems on a single non-volatile memory system is described. The system may include a non-volatile memory system with non-volatile memory having first and second file systems, each associated with respective files, and having a common pool of free space. The controller may be configured to update a file system to be mounted to reflect a capacity relating to only the respective files for that file system and all of the common pool of free space, while hiding from the host the file system not being mounted. The method may include the controller only presenting a single file system and hiding the unmounted file system, or may include the controller managing multiple file systems by presenting multiple file systems concurrently.

Abstract: A storage module may be configured to organize data to be moved from an initial storage location to a destination storage location into sets, and to determine whether to commit the data to the destination storage location on a set-by-set basis. Error correction and/or a post write and read process may be performed on the sets that are copied to the destination storage location to determine whether to commit each of the copied sets.

Abstract: A solution for combining a portion of data from a block of single level cells to a block of multi-level cells. The solution includes identifying word lines with only valid data and word lines with non-valid data in a selected block of single level cells, copying data from word lines with valid data to a destination block of multi-level cells and copying data from word lines in the selected block of single level cells with non-valid data to a separate compaction block of single level cells. The system includes a first controller module configured to scan for word lines with only valid data and pass a bitmap identifying valid and invalid word lines to a second controller module. The second controller module is configured to perform on-chip combining of data from valid word lines, and copy data from invalid data word lines to a compaction block of single level cells.

Abstract: A memory system logs failures to optimize garbage collection in partial bad blocks that are reused in non-volatile memory. A failure in a primary block may be logged in an inverse global address table. A garbage collection operation can reference the log in order to automatically avoid the failure in the primary block when the primary block is picked as the source block for garbage collection. Likewise, the garbage collection operation may scan only the logged wordlines in the secondary block when the secondary block is picked as the source block for garbage collection.

Abstract: A non-volatile storage system comprises a controller and one or more memory die in communication with the controller. The controller sends data and an initial address in conjunction with a request to program the data to one of the memory die. The memory die comprises a plurality of non-volatile storage elements and one or more control circuits. The one or more control circuits attempt to program the data to the non-volatile storage elements at the initial address and determine that programming of the data at the initial address fails. The one or more managing circuits automatically identify a new address in the memory die without the memory die being instructed of the new address by the controller and program the data at the new address on the memory die without the data being re-transmitted from the controller to the memory die.

Abstract: A memory system logs failures to optimize garbage collection in partial bad blocks that are reused in non-volatile memory. A failure in a primary block may be logged in an inverse global address table. A garbage collection operation can reference the log in order to automatically avoid the failure in the primary block when the primary block is picked as the source block for garbage collection. Likewise, the garbage collection operation may scan only the logged wordlines in the secondary block when the secondary block is picked as the source block for garbage collection.