Patents by Inventor Vinay Agrawal
Vinay Agrawal has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11599514Abstract: Techniques for implementing systems using transactional version sets are described. Transactional version sets or t-sets include a collection of elements, each having a collection of metadata. A t-set is transactional in that a sequence of updates to one or more t-sets are made within an atomic transaction. A t-set is versioned since each committed transaction that updates it produces a new timestamped version that can be accessed via time-travel queries.Type: GrantFiled: March 29, 2021Date of Patent: March 7, 2023Assignee: Amazon Technologies, Inc.Inventors: Vinay Agrawal, Bohou Li, Vikas Malik, Tushar Poddar, Vijayan Prabhakaran, Mukesh Punhani, Mehul A. Shah, Benjamin Sowell, Douglas Brian Terry
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Patent number: 8035407Abstract: An apparatus and method for self-testing a DDR memory interface are disclosed. In one aspect, a built-in-self-test (BIST) memory interface circuit includes a signal multiplier for receiving a first clock signal from a tester and outputs a multiplied clock signal. A first multiplexer is used for selecting between a test mode and a normal operating mode and provides an output signal. A delay magnitude generator is coupled to the signal multiplier to receive the multiplied clock signal and provides a second clock signal and a phase control signal. A plurality of digitally controlled delay line blocks are used for each receiving the second clock signal and the phase control signal and outputting a phase shifted data strobe output signal in response to receiving an internal data strobe input signal. A second multiplexer selects one of the internal data strobe input signals and a third multiplexer selects the phase shifted data strobe output signal that corresponds to the selected internal data strobe input signal.Type: GrantFiled: April 4, 2011Date of Patent: October 11, 2011Assignee: Texas Instruments IncorporatedInventors: James Michael Jarboe, Jr., Sukanta Kishore Panigrahi, Vinay Agrawal, Neeraj P. Nayak
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Publication number: 20110176374Abstract: An apparatus and method for self-testing a DDR memory interface are disclosed. In one aspect, a built-in-self-test (BIST) memory interface circuit includes a signal multiplier for receiving a first clock signal from a tester and outputs a multiplied clock signal. A first multiplexer is used for selecting between a test mode and a normal operating mode and provides an output signal. A delay magnitude generator is coupled to the signal multiplier to receive the multiplied clock signal and provides a second clock signal and a phase control signal. A plurality of digitally controlled delay line blocks are used for each receiving the second clock signal and the phase control signal and outputting a phase shifted data strobe output signal in response to receiving an internal data strobe input signal. A second multiplexer selects one of the internal data strobe input signals and a third multiplexer selects the phase shifted data strobe output signal that corresponds to the selected internal data strobe input signal.Type: ApplicationFiled: April 4, 2011Publication date: July 21, 2011Applicant: TEXAS INSTRUMENTS INCORPORATEDInventors: James Michael Jarboe, JR., Sukanta Kishore Panigrahi, Vinay Agrawal, Neeraj P. Nayak
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Patent number: 7940066Abstract: An apparatus and method for self-testing a DDR memory interface are disclosed. In one aspect, a built-in-self-test (BIST) memory interface circuit includes a signal multiplier for receiving a first clock signal from a tester and outputs a multiplied clock signal. A first multiplexer is used for selecting between a test mode and a normal operating mode and provides an output signal. A delay magnitude generator is coupled to the signal multiplier to receive the multiplied clock signal and provides a second clock signal and a phase control signal. A plurality of digitally controlled delay line blocks are used for each receiving the second clock signal and the phase control signal and outputting a phase shifted data strobe output signal in response to receiving an internal data strobe input signal. A second multiplexer selects one of the internal data strobe input signals and a third multiplexer selects the phase shifted data strobe output signal that corresponds to the selected internal data strobe input signal.Type: GrantFiled: October 13, 2010Date of Patent: May 10, 2011Assignee: Texas Instruments IncorporatedInventors: James Michael Jarboe, Jr., Sukanta Kishore Panigrahi, Vinay Agrawal, Neeraj P. Nayak
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Publication number: 20110026343Abstract: An apparatus and method for self-testing a DDR memory interface are disclosed. In one aspect, a built-in-self-test (BIST) memory interface circuit includes a signal multiplier for receiving a first clock signal from a tester and outputs a multiplied clock signal. A first multiplexer is used for selecting between a test mode and a normal operating mode and provides an output signal. A delay magnitude generator is coupled to the signal multiplier to receive the multiplied clock signal and provides a second clock signal and a phase control signal. A plurality of digitally controlled delay line blocks are used for each receiving the second clock signal and the phase control signal and outputting a phase shifted data strobe output signal in response to receiving an internal data strobe input signal. A second multiplexer selects one of the internal data strobe input signals and a third multiplexer selects the phase shifted data strobe output signal that corresponds to the selected internal data strobe input signal.Type: ApplicationFiled: October 13, 2010Publication date: February 3, 2011Applicant: TEXAS INSTRUMENTS INCORPORATEDInventors: James Michael Jarboe, JR., Sukanta Kishore Panigrahi, Vinay Agrawal, Neeraj P. Nayak
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Patent number: 7834615Abstract: An apparatus and method for self-testing a DDR memory interface are disclosed. In one aspect, a built-in-self-test (BIST) memory interface circuit includes a signal multiplier for receiving a first clock signal from a tester and outputs a multiplied clock signal. A first multiplexer is used for selecting between a test mode and a normal operating mode and provides an output signal. A delay magnitude generator is coupled to the signal multiplier to receive the multiplied clock signal and provides a second clock signal and a phase control signal. A plurality of digitally controlled delay line blocks are used for each receiving the second clock signal and the phase control signal and outputting a phase shifted data strobe output signal in response to receiving an internal data strobe input signal. A second multiplexer selects one of the internal data strobe input signals and a third multiplexer selects the phase shifted data strobe output signal that corresponds to the selected internal data strobe input signal.Type: GrantFiled: July 2, 2007Date of Patent: November 16, 2010Assignee: Texas Instruments IncorporatedInventors: James Michael Jarboe, Jr., Sukanta Kishore Panigrahi, Vinay Agrawal, Neeraj P. Nayak
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Publication number: 20090013228Abstract: An apparatus and method for self-testing a DDR memory interface are disclosed. In one aspect, a built-in-self-test (BIST) memory interface circuit comprises a signal multiplier for receiving a first clock signal from a tester and outputs a multiplied clock signal. A first multiplexer is used for selecting between a test mode and a normal operating mode and provides an output signal. A delay magnitude generator is coupled to the signal multiplier to receive the multiplied clock signal and provides a second clock signal and a phase control signal. A plurality of digitally controlled delay line blocks are used for each receiving the second clock signal and the phase control signal and outputting a plurality of sequential input/output bit-pair signals corresponding to an internal data strobe input signal and a phase shifted data strobe output signal respectively.Type: ApplicationFiled: July 2, 2007Publication date: January 8, 2009Inventors: JAMES MICHAEL JARBOE, JR., Sukanta Kishore Panigrahi, Vinay Agrawal, Neeraj P. Nayak
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Publication number: 20090009206Abstract: An apparatus and method for self-testing a DDR memory interface are disclosed. In one aspect, a built-in-self-test (BIST) memory interface circuit comprises a signal multiplier for receiving a first clock signal from a tester and outputs a multiplied clock signal. A first multiplexer is used for selecting between a test mode and a normal operating mode and provides an output signal. A delay magnitude generator is coupled to the signal multiplier to receive the multiplied clock signal and provides a second clock signal and a phase control signal. A plurality of digitally controlled delay line blocks are used for each receiving the second clock signal and the phase control signal and outputting a plurality of sequential input/output bit-pair signals corresponding to an internal data strobe input signal and a phase shifted data strobe output signal respectively.Type: ApplicationFiled: July 2, 2007Publication date: January 8, 2009Inventors: James Michael Jarboe, JR., Sukanta Kishore Panigrahi, Vinay Agrawal, Neeraj P. Nayak