Abstract: The present disclosure provides a method and a flash memory device for detecting temperature in the flash memory device. The method includes receiving an Input/Output (I/O) request from a host device and determining on-cell count value for a targeted page within an active block of the flash memory device upon receiving the I/O request. The method further includes comparing the on-cell count value of the targeted page, which is within the active block of the flash memory device, with a stored on-cell count data of the flash memory device. Additionally, the method includes determining the temperature of the flash memory device corresponding to a stored on-cell count value based on the comparison. A notification signal is transmitted to the host device based on the temperature of the flash memory device and a threshold operating temperature of the flash memory device.

Abstract: The present disclosure relates to a method and system for tuning a memory device for high-speed transitions. Upon failure of bus sampling tuning of a memory device with default tuning parameters, the host device is configured to transmit an auto-tuning request to the memory device for until one or more pre-defined conditions are satisfied. The memory device is configured to receive the auto-tuning request from the host device, selects a set of tuning parameters from a plurality of sets of tuning parameters, and transmits a tuning block to the host device based on the selected set of tuning parameters, until one or more pre-defined conditions are satisfied. Thereby, the memory device can utilize high-speed mode and high-speed transitions can be achieved between host and memory devices. Thus, initialization failure of the memory device can also be avoided.

Abstract: The present disclosure relates to a method and system for tuning a memory device for high-speed transitions. Upon failure of bus sampling tuning of a memory device with default tuning parameters, the host device is configured to transmit an auto-tuning request to the memory device for until one or more pre-defined conditions are satisfied. The memory device is configured to receive the auto-tuning request from the host device, selects a set of tuning parameters from a plurality of sets of tuning parameters, and transmits a tuning block to the host device based on the selected set of tuning parameters, until one or more pre-defined conditions are satisfied. Thereby, the memory device can utilize high-speed mode and high-speed transitions can be achieved between host and memory devices. Thus, initialization failure of the memory device can also be avoided.