Patents by Inventor Vinayak Vishwanath Hassan

Vinayak Vishwanath Hassan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200058213
    Abstract: An extreme ultraviolet (EUV) mask blank production system includes: a substrate handling vacuum chamber for creating a vacuum; a substrate handling platform, in the vacuum, for transporting an ultra-low expansion substrate loaded in the substrate handling vacuum chamber; and multiple sub-chambers, accessed by the substrate handling platform, for forming an EUV mask blank includes: a multi-layer stack, formed above the ultra-low expansion substrate, for reflecting an extreme ultraviolet (EUV) light, and an absorber layer, formed above the multi-layer stack, for absorbing the EUV light at a wavelength of 13.5 nm includes the absorber layer has a thickness of less than 80 nm and less than 2% reflectivity.
    Type: Application
    Filed: December 14, 2018
    Publication date: February 20, 2020
    Applicant: Applied Materials, Inc.
    Inventors: Vinayak Vishwanath Hassan, Majeed A. Foad, Cara Beasley, Ralf Hofmann
  • Patent number: 10551732
    Abstract: An extreme ultraviolet (EUV) mask blank production system includes: a substrate handling vacuum chamber for creating a vacuum; a substrate handling platform, in the vacuum, for transporting an ultra-low expansion substrate loaded in the substrate handling vacuum chamber; and multiple sub-chambers, accessed by the substrate handling platform, for forming an EUV mask blank includes: a multi-layer stack, formed above the ultra-low expansion substrate, for reflecting an extreme ultraviolet (EUV) light, and an absorber layer, formed above the multi-layer stack, for absorbing the EUV light at a wavelength of 13.5 nm includes the absorber layer has a thickness of less than 80 nm and less than 2% reflectivity.
    Type: Grant
    Filed: December 14, 2018
    Date of Patent: February 4, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Vinayak Vishwanath Hassan, Majeed A. Foad, Cara Beasley, Ralf Hofmann
  • Publication number: 20200035467
    Abstract: Apparatus and methods for generating a flow of radicals are provided. An ion blocker is positioned a distance from a faceplate of a remote plasma source. The ion blocker has openings to allow the plasma to flow through. The ion blocker is polarized relative to a showerhead positioned on an opposite side of the ion blocker so that there are substantially no plasma gas ions passing through the showerhead.
    Type: Application
    Filed: July 26, 2019
    Publication date: January 30, 2020
    Inventors: Vivek B. Shah, Vinayak Vishwanath Hassan, Bhaskar Kumar, Ganesh Balasubramanian
  • Publication number: 20190130731
    Abstract: An extreme ultraviolet (EUV) mask blank production system includes: a substrate handling vacuum chamber for creating a vacuum; a substrate handling platform, in the vacuum, for transporting an ultra-low expansion substrate loaded in the substrate handling vacuum chamber; and multiple sub-chambers, accessed by the substrate handling platform, for forming an EUV mask blank includes: a multi-layer stack, formed above the ultra-low expansion substrate, for reflecting an extreme ultraviolet (EUV) light, and an absorber layer, formed above the multi-layer stack, for absorbing the EUV light at a wavelength of 13.5 nm includes the absorber layer has a thickness of less than 80 nm and less than 2% reflectivity.
    Type: Application
    Filed: December 14, 2018
    Publication date: May 2, 2019
    Applicant: Applied Materials, Inc.
    Inventors: Vinayak Vishwanath Hassan, Majeed A. Foad, Cara Beasley, Ralf Hofmann
  • Patent number: 10197907
    Abstract: An extreme ultraviolet (EUV) mask blank production system includes: a substrate handling vacuum chamber for creating a vacuum; a substrate handling platform, in the vacuum, for transporting an ultra-low expansion substrate loaded in the substrate handling vacuum chamber; and multiple sub-chambers, accessed by the substrate handling platform, for forming an EUV mask blank includes: a multi-layer stack, formed above the ultra-low expansion substrate, for reflecting an extreme ultraviolet (EUV) light, and an absorber layer, formed above the multi-layer stack, for absorbing the EUV light at a wavelength of 13.5 nm includes the absorber layer has a thickness of less than 80 nm and less than 2% reflectivity.
    Type: Grant
    Filed: February 21, 2017
    Date of Patent: February 5, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Vinayak Vishwanath Hassan, Majeed A. Foad, Cara Beasley, Ralf Hofmann
  • Patent number: 10012908
    Abstract: An apparatus and method of manufacture of an extreme ultraviolet reflective element includes: a substrate; a multilayer stack on the substrate, the multilayer stack includes a plurality of reflective layer pairs having a first reflective layer formed from silicon and a second reflective layer formed from niobium or niobium carbide for forming a Bragg reflector; and a capping layer on and over the multilayer stack for protecting the multilayer stack by reducing oxidation and mechanical erosion.
    Type: Grant
    Filed: January 19, 2017
    Date of Patent: July 3, 2018
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Ralf Hofmann, Vinayak Vishwanath Hassan, Cara Beasley, Majeed A. Foad
  • Patent number: 10012897
    Abstract: An extreme ultraviolet (EUV) mask blank production system includes: a substrate handling vacuum chamber for creating a vacuum; a substrate handling platform, in the vacuum, for transporting an ultra-low expansion substrate loaded in the substrate handling vacuum chamber; and multiple sub-chambers, accessed by the substrate handling platform, for forming an EUV mask blank includes: a first sub-chamber for forming a multi-layer stack, above the ultra-low expansion substrate, for reflecting an extreme ultraviolet (EUV) light; and a second sub-chamber for forming a bi-layer absorber, formed above the multi-layer stack, for absorbing the EUV light at a wavelength of 13.5 nm provides a reflectivity of less than 1.9%.
    Type: Grant
    Filed: January 13, 2017
    Date of Patent: July 3, 2018
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Vinayak Vishwanath Hassan, Majeed Foad, Cara Beasley, Ralf Hofmann
  • Patent number: 9690016
    Abstract: An extreme ultraviolet reflective element and method of manufacture includes a substrate; a multilayer stack on the substrate, the multilayer stack includes a plurality of reflective layer pairs having a first reflective layer formed from silicon and a second reflective layer having a preventative layer separating a lower amorphous layer and an upper amorphous layer; and a capping layer on and over the multilayer stack for protecting the multilayer stack by reducing oxidation and mechanical erosion.
    Type: Grant
    Filed: April 24, 2015
    Date of Patent: June 27, 2017
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Ralf Hofmann, Cara Beasley, Vinayak Vishwanath Hassan, Majeed A. Foad
  • Publication number: 20170160632
    Abstract: An extreme ultraviolet (EUV) mask blank production system includes: a substrate handling vacuum chamber for creating a vacuum; a substrate handling platform, in the vacuum, for transporting an ultra-low expansion substrate loaded in the substrate handling vacuum chamber; and multiple sub-chambers, accessed by the substrate handling platform, for forming an EUV mask blank includes: a multi-layer stack, formed above the ultra-low expansion substrate, for reflecting an extreme ultraviolet (EUV) light, and an absorber layer, formed above the multi-layer stack, for absorbing the EUV light at a wavelength of 13.5 nm includes the absorber layer has a thickness of less than 80 nm and less than 2% reflectivity.
    Type: Application
    Filed: February 21, 2017
    Publication date: June 8, 2017
    Inventors: Vinayak Vishwanath Hassan, Majeed A. Foad, Cara Beasley, Ralf Hofmann
  • Publication number: 20170131637
    Abstract: An apparatus and method of manufacture of an extreme ultraviolet reflective element includes: a substrate; a multilayer stack on the substrate, the multilayer stack includes a plurality of reflective layer pairs having a first reflective layer formed from silicon and a second reflective layer formed from niobium or niobium carbide for forming a Bragg reflector; and a capping layer on and over the multilayer stack for protecting the multilayer stack by reducing oxidation and mechanical erosion.
    Type: Application
    Filed: January 19, 2017
    Publication date: May 11, 2017
    Inventors: Ralf Hofmann, Vinayak Vishwanath Hassan, Cara Beasley, Majeed A. Foad
  • Publication number: 20170131627
    Abstract: An extreme ultraviolet (EUV) mask blank production system includes: a substrate handling vacuum chamber for creating a vacuum; a substrate handling platform, in the vacuum, for transporting an ultra-low expansion substrate loaded in the substrate handling vacuum chamber; and multiple sub-chambers, accessed by the substrate handling platform, for forming an EUV mask blank includes: a first sub-chamber for forming a multi-layer stack, above the ultra-low expansion substrate, for reflecting an extreme ultraviolet (EUV) light; and a second sub-chamber for forming a bi-layer absorber, formed above the multi-layer stack, for absorbing the EUV light at a wavelength of 13.5 nm provides a reflectivity of less than 1.9%.
    Type: Application
    Filed: January 13, 2017
    Publication date: May 11, 2017
    Inventors: Vinayak Vishwanath Hassan, Majeed Foad, Cara Beasley, Ralf Hofmann
  • Patent number: 9612522
    Abstract: An extreme ultraviolet (EUV) mask blank production system includes: a substrate handling vacuum chamber for creating a vacuum; a substrate handling platform, in the vacuum, for transporting an ultra-low expansion substrate loaded in the substrate handling vacuum chamber; and multiple sub-chambers, accessed by the substrate handling platform, for forming an EUV mask blank includes: a multi-layer stack, formed above the ultra-low expansion substrate, for reflecting an extreme ultraviolet (EUV) light, and an absorber layer, formed above the multi-layer stack, for absorbing the EUV light at a wavelength of 13.5 nm includes the absorber layer has a thickness of less than 80 nm and less than 2% reflectivity.
    Type: Grant
    Filed: February 11, 2015
    Date of Patent: April 4, 2017
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Vinayak Vishwanath Hassan, Majeed A. Foad, Cara Beasley, Ralf Hofmann
  • Patent number: 9581890
    Abstract: An apparatus and method of manufacture of an extreme ultraviolet reflective element includes: a substrate; a multilayer stack on the substrate, the multilayer stack includes a plurality of reflective layer pairs having a first reflective layer formed from silicon and a second reflective layer formed from niobium or niobium carbide for forming a Bragg reflector; and a capping layer on and over the multilayer stack for protecting the multilayer stack by reducing oxidation and mechanical erosion.
    Type: Grant
    Filed: April 24, 2015
    Date of Patent: February 28, 2017
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Ralf Hofmann, Vinayak Vishwanath Hassan, Cara Beasley, Majeed A. Foad
  • Patent number: 9581889
    Abstract: An extreme ultraviolet (EUV) mask blank production system includes: a substrate handling vacuum chamber for creating a vacuum; a substrate handling platform, in the vacuum, for transporting an ultra-low expansion substrate loaded in the substrate handling vacuum chamber; and multiple sub-chambers, accessed by the substrate handling platform, for forming an EUV mask blank includes: a first sub-chamber for forming a multi-layer stack, above the ultra-low expansion substrate, for reflecting an extreme ultraviolet (EUV) light; and a second sub-chamber for forming a bi-layer absorber, formed above the multi-layer stack, for absorbing the EUV light at a wavelength of 13.5 nm provides a reflectivity of less than 1.9%.
    Type: Grant
    Filed: February 11, 2015
    Date of Patent: February 28, 2017
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Vinayak Vishwanath Hassan, Majeed A. Foad, Cara Beasley, Ralf Hofmann
  • Publication number: 20160011502
    Abstract: An apparatus and method of manufacture of an extreme ultraviolet reflective element includes: a substrate; a multilayer stack on the substrate, the multilayer stack includes a plurality of reflective layer pairs having a first reflective layer formed from silicon and a second reflective layer formed from niobium or niobium carbide for forming a Bragg reflector; and a capping layer on and over the multilayer stack for protecting the multilayer stack by reducing oxidation and mechanical erosion.
    Type: Application
    Filed: April 24, 2015
    Publication date: January 14, 2016
    Inventors: Ralf Hofmann, Vinayak Vishwanath Hassan, Cara Beasley, Majeed A. Foad
  • Publication number: 20160011345
    Abstract: An extreme ultraviolet reflective element and method of manufacture includes a substrate; a multilayer stack on the substrate, the multilayer stack includes a plurality of reflective layer pairs having a first reflective layer formed from silicon and a second reflective layer having a preventative layer separating a lower amorphous layer and an upper amorphous layer; and a capping layer on and over the multilayer stack for protecting the multilayer stack by reducing oxidation and mechanical erosion.
    Type: Application
    Filed: April 24, 2015
    Publication date: January 14, 2016
    Inventors: Ralf Hofmann, Cara Beasley, Vinayak Vishwanath Hassan, Majeed A. Foad
  • Publication number: 20160011499
    Abstract: An extreme ultraviolet (EUV) mask blank production system includes: a substrate handling vacuum chamber for creating a vacuum; a substrate handling platform, in the vacuum, for transporting an ultra-low expansion substrate loaded in the substrate handling vacuum chamber; and multiple sub-chambers, accessed by the substrate handling platform, for forming an EUV mask blank includes: a multi-layer stack, formed above the ultra-low expansion substrate, for reflecting an extreme ultraviolet (EUV) light, and an absorber layer, formed above the multi-layer stack, for absorbing the EUV light at a wavelength of 13.5 nm includes the absorber layer has a thickness of less than 80nm and less than 2% reflectivity.
    Type: Application
    Filed: February 11, 2015
    Publication date: January 14, 2016
    Inventors: Vinayak Vishwanath Hassan, Majeed A. Foad, Cara Beasley, Ralf Hofmann
  • Publication number: 20160011500
    Abstract: An extreme ultraviolet (EUV) mask blank production system includes: a substrate handling vacuum chamber for creating a vacuum; a substrate handling platform, in the vacuum, for transporting an ultra-low expansion substrate loaded in the substrate handling vacuum chamber; and multiple sub-chambers, accessed by the substrate handling platform, for forming an EUV mask blank includes: a first sub-chamber for forming a multi-layer stack, above the ultra-low expansion substrate, for reflecting an extreme ultraviolet (EUV) light; and a second sub-chamber for forming a bi-layer absorber, formed above the multi-layer stack, for absorbing the EUV light at a wavelength of 13.5 nm provides a reflectivity of less than 1.9%.
    Type: Application
    Filed: February 11, 2015
    Publication date: January 14, 2016
    Inventors: Vinayak Vishwanath Hassan, Majeed A. Foad, Cara Beasley, Ralf Hofmann