Patents by Inventor Vince Deems

Vince Deems has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Systems and methods for fabricating a polycrystaline semiconductor resistor on a semiconductor substrate
    Patent number: 10068779
    Abstract: In accordance with embodiments of the present disclosure, an integrated circuit may include at least one region of shallow-trench isolation field oxide, at least one region of dummy diffusion, and a polycrystalline semiconductor resistor. The at least one region of shallow-trench isolation field oxide may be formed on a semiconductor substrate. The at least one region of dummy diffusion may be formed adjacent to the at least one region of shallow-trench isolation field oxide on the semiconductor substrate. The polycrystalline semiconductor resistor may comprise at least one resistor arm formed with a polycrystalline semiconductor material, wherein the at least one resistor arm is formed over each of the at least one region of shallow-trench isolation field oxide and the at least one region of dummy diffusion.
    Type: Grant
    Filed: August 11, 2017
    Date of Patent: September 4, 2018
    Assignee: Cirrus Logic, Inc.
    Inventors: Zhonghai Shi, Vince Deems, Hong Tian
  • SYSTEMS AND METHODS FOR FABRICATING A POLYCRYSTALINE SEMICONDUCTOR RESISTOR ON A SEMICONDUCTOR SUBSTRATE
    Publication number: 20170338126
    Abstract: In accordance with embodiments of the present disclosure, an integrated circuit may include at least one region of shallow-trench isolation field oxide, at least one region of dummy diffusion, and a polycrystalline semiconductor resistor. The at least one region of shallow-trench isolation field oxide may be formed on a semiconductor substrate. The at least one region of dummy diffusion may be formed adjacent to the at least one region of shallow-trench isolation field oxide on the semiconductor substrate. The polycrystalline semiconductor resistor may comprise at least one resistor arm formed with a polycrystalline semiconductor material, wherein the at least one resistor arm is formed over each of the at least one region of shallow-trench isolation field oxide and the at least one region of dummy diffusion.
    Type: Application
    Filed: August 11, 2017
    Publication date: November 23, 2017
    Applicant: Cirrus Logic, Inc.
    Inventors: Zhonghai SHI, Vince DEEMS, Hong TIAN
  • Systems and methods for fabricating a polycrystaline semiconductor resistor on a semiconductor substrate
    Patent number: 9761461
    Abstract: In accordance with embodiments of the present disclosure, an integrated circuit may include at least one region of shallow-trench isolation field oxide, at least one region of dummy diffusion, and a polycrystalline semiconductor resistor. The at least one region of shallow-trench isolation field oxide may be formed on a semiconductor substrate. The at least one region of dummy diffusion may be formed adjacent to the at least one region of shallow-trench isolation field oxide on the semiconductor substrate. The polycrystalline semiconductor resistor may comprise at least one resistor arm formed with a polycrystalline semiconductor material, wherein the at least one resistor arm is formed over each of the at least one region of shallow-trench isolation field oxide and the at least one region of dummy diffusion.
    Type: Grant
    Filed: June 5, 2014
    Date of Patent: September 12, 2017
    Assignee: Cirrus Logic, Inc.
    Inventors: Zhonghai Shi, Vince Deems, Hong Tian
  • SYSTEMS AND METHODS FOR FABRICATING A POLYCRYSTALINE SEMICONDUCTOR RESISTOR ON A SEMICONDUCTOR SUBSTRATE
    Publication number: 20150303246
    Abstract: In accordance with embodiments of the present disclosure, an integrated circuit may include at least one region of shallow-trench isolation field oxide, at least one region of dummy diffusion, and a polycrystalline semiconductor resistor. The at least one region of shallow-trench isolation field oxide may be formed on a semiconductor substrate. The at least one region of dummy diffusion may be formed adjacent to the at least one region of shallow-trench isolation field oxide on the semiconductor substrate. The polycrystalline semiconductor resistor may comprise at least one resistor arm formed with a polycrystalline semiconductor material, wherein the at least one resistor arm is formed over each of the at least one region of shallow-trench isolation field oxide and the at least one region of dummy diffusion.
    Type: Application
    Filed: June 5, 2014
    Publication date: October 22, 2015
    Inventors: Zhonghai Shi, Vince Deems, Hong Tian