Patents by Inventor Vincent Beix
Vincent Beix has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 11626548Abstract: A method for transferring electroluminescent structures onto a face, referred to as the accommodating face, of an accommodating substrate. The accommodating face is moreover provided with interconnections intended to individually address each of the structures. The electroluminescent structures are initially formed on a supporting substrate and are separated by tracks. It is then proposed in the present invention to form reflective walls, vertically above the tracks, which comprise a supporting polymer (the second polymer) supporting a metal film on its sides. Such an arrangement of reflective walls makes it possible to reduce the stresses exerted on the electroluminescent structures during the transfer method according to the present invention. Moreover, the reflective walls, within the meaning of the present invention, may be produced on all the electroluminescent structures resting on a supporting substrate.Type: GrantFiled: December 17, 2018Date of Patent: April 11, 2023Assignees: ALEDIA, COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVESInventors: Marion Volpert, Vincent Beix, François Levy, Mario Ibrahim, Fabrice De Moro
-
Patent number: 11605759Abstract: An optoelectronic device including a substrate having opposite first and second surfaces; insulation trenches extending through the substrate, surrounding portions of the substrate and electrically insulating the portions from each other, each insulation trench being filled with at least one electrically insulating block and a gaseous volume or being filled with an electrically conductive element electrically isolated from the substrate; at least one light-emitting diode resting on the first surface for each portion of the substrate, the light-emitting diodes comprising wired, conical, or frustoconical semiconductor elements; an electrode layer covering at least one of the light-emitting diodes and a conductive layer overlying the electrode layer around the light-emitting diodes; and a layer encapsulating the light-emitting diodes and covering the entire first surface.Type: GrantFiled: June 18, 2019Date of Patent: March 14, 2023Assignees: Aledia, Commissariat à l'Énergie Atomique et aux Énergies AlternativesInventors: Vincent Beix, Thomas Lacave, Marion Volpert, Olivier Girard, Denis Renaud, Brigitte Soulier
-
Patent number: 11398579Abstract: A method for producing optoelectronic devices, including the following successive steps: providing a substrate having a first face; on the first face, forming sets of light-emitting diodes including wire-like, conical or frustoconical semiconductor elements; covering all of the first face with a layer encapsulating the light-emitting diodes; forming a conductive element that is insulated from the substrate and extends through the substrate from the second face to at least the first face; reducing the thickness of the substrate; and cutting the resulting structure in order to separate each set of light-emitting diodes.Type: GrantFiled: June 19, 2018Date of Patent: July 26, 2022Assignees: Commissariat à l'Énergie Atomique et aux Énergies Alternatives, AlediaInventors: Christophe Bouvier, Emilie Pougeoise, Xavier Hugon, Carlo Cagli, Tiphaine Dupont, Philippe Gibert, Nacer Aitmani, Vincent Beix, Thomas Lacave, Marion Volpert, Olivier Girard, Denis Renaud, Brigitte Soulier
-
Patent number: 11362137Abstract: The disclosure relates to an optoelectronic device comprising: a plurality of separate first electrodes that extend longitudinally in parallel to an axis A1, each first electrode being formed of a longitudinal conductive portion and a conductive nucleation strip, the longitudinal conductive portion having an electrical resistance lower than that of the conductive nucleation strip; a plurality of diodes; at least one intermediate insulating layer covering the first electrodes; and a plurality of separate second electrodes in the form of transparent conductive strips that extend longitudinally in contact with second doped portions, and are electrically insulated from the first electrodes by means of the intermediate insulating layer, parallel to an axis A2, the axis A2 not being parallel to axis A1.Type: GrantFiled: December 21, 2018Date of Patent: June 14, 2022Assignee: AlediaInventors: Vincent Beix, Erwan Dornel
-
Publication number: 20210257514Abstract: An optoelectronic device including a substrate having opposite first and second surfaces; insulation trenches extending through the substrate, surrounding portions of the substrate and electrically insulating the portions from each other, each insulation trench being filled with at least one electrically insulating block and a gaseous volume or being filled with an electrically conductive element electrically isolated from the substrate; at least one light-emitting diode resting on the first surface for each portion of the substrate, the light-emitting diodes comprising wired, conical, or frustoconical semiconductor elements; an electrode layer covering at least one of the light-emitting diodes and a conductive layer overlying the electrode layer around the light-emitting diodes; and a layer encapsulating the light-emitting diodes and covering the entire first surface.Type: ApplicationFiled: June 18, 2019Publication date: August 19, 2021Applicants: Aledia, Commissariat à I'Énergie Atomique et aux Énergies AlternativesInventors: Vincent Beix, Thomas Lacave, Marion Volpert, Olivier Girard, Denis Renaud, Brigitte Soulier
-
Patent number: 10916580Abstract: A method of manufacturing an optoelectronic device, comprising the successive steps of: providing a substrate at least partially made of a semiconductor material and having first and second opposite faces; forming a stack of semiconductor layers on the first face, said stack including third and fourth opposite faces, the fourth face being on the side of the substrate, said stack including light-emitting diodes; forming through openings in the substrate from the side of the second face, said openings being opposite at least part of the light-emitting diodes and delimiting walls in the substrate; forming conductive pads on the fourth face in at least some of the openings in contact with the stack; and forming photoluminescent blocks in at least some of the openings.Type: GrantFiled: December 28, 2017Date of Patent: February 9, 2021Assignee: AlediaInventors: Zheng-Sung Chio, Wei Sin Tan, Vincent Beix, Philippe Gilet, Pierre Tchoulfian
-
Publication number: 20210028056Abstract: An electronic circuit including a semiconductor substrate having first and second opposite surfaces and electric insulation trenches. Each trench separates first and second portions of the substrate and includes electrically-insulating walls made of a first electrically-insulating material, extending from the first surface to the second surface, and a core made of a filling material, separated from the substrate by the walls. For at least one of the trenches, the trench walls include electrically-insulating portions made of the first electrically-insulating material protruding from the first or second surface outside of the substrate and/or the trench includes an electrically-insulating wall made of the first electrical-insulating material protruding from the first or second surface outside of the substrate and coupling the trench walls.Type: ApplicationFiled: September 12, 2018Publication date: January 28, 2021Applicants: Commissariat à I'Énergie Atomique et aux Énergies Alternatives, AlediaInventors: Adrien Gasse, Vincent Beix, Sylvie Jaryayes, Brigitte Soulier, Marion Volpert
-
Patent number: 10886427Abstract: An optoelectronic device including a support having a rear surface and a front surface opposite each other, a plurality of nucleation conductive strips forming first polarization electrodes, an intermediate insulating layer covering the nucleation conductive strips, a plurality of diodes, each of which having a first, three-dimensional doped region and a second doped region, and a plurality of top conductive strips forming second polarization electrodes and resting on the intermediate insulating layer, each top conductive strip being disposed in such a way as to be in contact with the second doped regions of a set of diodes of which the first doped regions are in contact with different nucleation conductive strips.Type: GrantFiled: June 26, 2017Date of Patent: January 5, 2021Assignees: ALEDIA, COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Florian Dupont, Benoit Amstatt, Vincent Beix, Thomas Lacave, Philippe Gilet, Ewen Henaff, Berangere Hyot, Hubert Bono
-
Publication number: 20200403130Abstract: A method for transferring electroluminescent structures onto a face, referred to as the accommodating face, of an accommodating substrate. The accommodating face is moreover provided with interconnections intended to individually address each of the structures. The electroluminescent structures are initially formed on a supporting substrate and are separated by tracks. It is then proposed in the present invention to form reflective walls, vertically above the tracks, which comprise a supporting polymer (the second polymer) supporting a metal film on its sides. Such an arrangement of reflective walls makes it possible to reduce the stresses exerted on the electroluminescent structures during the transfer method according to the present invention. Moreover, the reflective walls, within the meaning of the present invention, may be produced on all the electroluminescent structures resting on a supporting substrate.Type: ApplicationFiled: December 17, 2018Publication date: December 24, 2020Inventors: Marion Volpert, Vincent Beix, François Levy, Mario Ibrahim, Fabrice De Moro
-
Publication number: 20200335548Abstract: The disclosure relates to an optoelectronic device comprising: a plurality of separate first electrodes that extend longitudinally in parallel to an axis A1, each first electrode being formed of a longitudinal conductive portion and a conductive nucleation strip, the longitudinal conductive portion having an electrical resistance lower than that of the conductive nucleation strip; a plurality of diodes; at least one intermediate insulating layer covering the first electrodes; and a plurality of separate second electrodes in the form of transparent conductive strips that extend longitudinally in contact with second doped portions, and are electrically insulated from the first electrodes by means of the intermediate insulating layer, parallel to an axis A2, the axis A2 not being parallel to axis A1.Type: ApplicationFiled: December 21, 2018Publication date: October 22, 2020Inventors: Vincent Beix, Erwan Dornel
-
Patent number: 10734442Abstract: A method of manufacturing an optoelectronic device, comprising the successive steps of: a) providing a substrate at least partially made of a semiconductor material and having first and second opposite faces; b) forming light-emitting diodes on the substrate, each light-emitting diode comprising a semiconductor microwire or nanowire covered by a shell; c) forming an encapsulation layer surrounding the light-emitting diodes; d) forming conductive pads on the encapsulation layer, on the side of the encapsulation layer opposite to the substrate, in contact with the light-emitting diodes; and e) forming through openings in the substrate from the side of the second face, said openings being opposite at least part of the light-emitting diodes and delimiting walls in the substrate.Type: GrantFiled: December 28, 2017Date of Patent: August 4, 2020Assignee: AlediaInventors: Zheng-Sung Chio, Wei Sin Tan, Vincent Beix, Philippe Gilet, Pierre Tchoulfian
-
Patent number: 10593588Abstract: An electronic circuit including a semiconducting or conducting substrate having first and second opposite surfaces and at least first and second non-parallel electrically insulating trenches that extend from the first surface in the substrate, define at least one portion of the substrate and join at a junction, the portion of the substrate including a protrusion that extends to the junction.Type: GrantFiled: December 21, 2016Date of Patent: March 17, 2020Assignees: Aledia, Commissariat à l'Énergie Atomique et aux Énergies AlternativesInventors: Fabienne Goutaudier, Thomas Lacave, Vincent Beix, Stephan Borel, Bertrand Chambion, Brigitte Soulier
-
Publication number: 20190333963Abstract: A method of manufacturing an optoelectronic device, comprising the successive steps of: a) providing a substrate at least partially made of a semiconductor material and having first and second opposite faces; b) forming light-emitting diodes on the substrate, each light-emitting diode comprising a semiconductor microwire or nanowire covered by a shell; c) forming an encapsulation layer surrounding the light-emitting diodes; d) forming conductive pads on the encapsulation layer, on the side of the encapsulation layer opposite to the substrate, in contact with the light-emitting diodes; and e) forming through openings in the substrate from the side of the second face, said openings being opposite at least part of the light-emitting diodes and delimiting walls in the substrate.Type: ApplicationFiled: December 28, 2017Publication date: October 31, 2019Applicant: AlediaInventors: Zheng-Sung Chio, Wei Sin Tan, Vincent Beix, Philippe Gilet, Pierre Tchoulfian
-
Publication number: 20190326351Abstract: A method of manufacturing an optoelectronic device, comprising the successive steps of: providing a substrate at least partially made of a semiconductor material and having first and second opposite faces; forming a stack of semiconductor layers on the first face, said stack including third and fourth opposite faces, the fourth face being on the side of the substrate, said stack including light-emitting diodes; forming through openings in the substrate from the side of the second face, said openings being opposite at least part of the light-emitting diodes and delimiting walls in the substrate; forming conductive pads on the fourth face in at least some of the openings in contact with the stack; and forming photoluminescent blocks in at least some of the openings.Type: ApplicationFiled: December 28, 2017Publication date: October 24, 2019Applicant: AlediaInventors: Zheng-Sung Chio, Wei Sin Tan, Vincent Beix, Philippe Gilet, Pierre Tchoulfian
-
Publication number: 20190172970Abstract: An optoelectronic device including a support having a rear surface and a front surface opposite each other, a plurality of nucleation conductive strips forming first polarization electrodes, an intermediate insulating layer covering the nucleation conductive strips, a plurality of diodes, each of which having a first, three-dimensional doped region and a second doped region, and a plurality of top conductive strips forming second polarization electrodes and resting on the intermediate insulating layer, each top conductive strip being disposed in such a way as to be in contact with the second doped regions of a set of diodes of which the first doped regions are in contact with different nucleation conductive strips.Type: ApplicationFiled: June 26, 2017Publication date: June 6, 2019Applicants: ALEDIA, COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Florian DUPONT, Benoit AMSTATT, Vincent BEIX, Thomas LACAVE, Philippe GILET, Ewen HENAFF, Berangere HYOT, Hubert BONO
-
Publication number: 20180366365Abstract: An electronic circuit including a semiconducting or conducting substrate having first and second opposite surfaces and at least first and second non-parallel electrically insulating trenches that extend from the first surface in the substrate, define at least one portion of the substrate and join at a junction, the portion of the substrate including a protrusion that extends to the junction.Type: ApplicationFiled: December 21, 2016Publication date: December 20, 2018Applicants: Aledia, Commissariat à l'Énergie Atomique et aux Énergies AlternativesInventors: Fabienne Goutaudier, Thomas Lacave, Vincent Beix, Stephan Borel, Bertrand Chambion, Brigitte Soulier
-
Publication number: 20180301594Abstract: A method for producing optoelectronic devices, including the following successive steps: providing a substrate having a first face; on the first face, forming sets of light-emitting diodes including wire-like, conical or frustoconical semiconductor elements; covering all of the first face with a layer encapsulating the light-emitting diodes; forming a conductive element that is insulated from the substrate and extends through the substrate from the second face to at least the first face; reducing the thickness of the substrate; and cutting the resulting structure in order to separate each set of light-emitting diodes.Type: ApplicationFiled: June 19, 2018Publication date: October 18, 2018Applicants: Commissariat à l'Énergie Atomique et aux Énergies Alternatives, AlediaInventors: Christophe Bouvier, Emilie Pougeoise, Xavier Hugon, Carolo Cagli, Tiphaine Dupont, Philippe Gibert, Nacer Aitmani, Vincent Beix, Thomas Lacave, Marion Volpert, Olivier Girard, Denis Renaud, Brigitte Soulier