Abstract: The invention concerns a method of forming a graphene device, the method comprising: forming a graphene film (100) over a substrate; depositing, by gas phase deposition, a polymer material covering a surface of the graphene film (100); and removing the substrate from the graphene film (100), wherein the polymer material forms a support (102) for the graphene film (100).

Abstract: The invention relates to a device for accessing an area with restricted access or an area to which access is controlled, comprising a support, a sensor and access control stage, the support comprising a portion to be discarded and a portion to be retained, the sensor being borne by the portion to be discarded and being configured to measure at least one parameter of a subject's health, and to deliver a detection signal representative of the measurement of each health parameter, the access control stage being borne by the portion to be retained and being configured to store access information dependent on the detection signal delivered by the sensor, the portion to be retained being able to be mechanically separated from the portion to be discarded so as to form an access key allowing, depending on the access information, access or otherwise to the area with restricted access or to the area to which access is controlled.

Abstract: The invention concerns a method of forming a graphene device, the method comprising: forming a graphene film (100) over a substrate; depositing, by gas phase deposition, a polymer material covering a surface of the graphene film (100); and removing the substrate from the graphene film (100), wherein the polymer material forms a support (102) for the graphene film (100).

Abstract: The invention concerns a method of forming a medical device, the method comprising: forming a graphene film (100) over a substrate (204); depositing, by gas phase deposition, a polymer material covering a surface of the graphene film (100); and removing the substrate (204) from the graphene film (100), wherein the polymer material forms a support (102) for the graphene film (100).

Abstract: The invention concerns a method of forming a medical device, the method comprising: forming a graphene film (100) over a substrate (204); depositing, by gas phase deposition, a polymer material covering a surface of the graphene film (100); and removing the substrate (204) from the graphene film (100), wherein the polymer material forms a support (102) for the graphene film (100).

Abstract: The invention concerns a transparent heating device comprising: a graphene film fixed to a transparent substrate; a first electrode (205) connected to a first edge of the graphene film; and a second electrode (206) connected to a second edge of the graphene film, wherein there is a resistance gradient across the graphene film from the first electrode (205) to the second electrode (206).

Abstract: The invention concerns a method of forming a graphene layer involving: heating a support layer in a reaction chamber; and forming the graphene layer on a surface of the support layer by: a) during a first time period, introducing into the reaction chamber an organic compound gas to cause a formation of carbon atoms on the surface; b) during a second time period after the first time period, reducing a rate of introduction of the organic compound gas into the reaction chamber and introducing into the reaction chamber a further gas, wherein the further gas is a carbon etching gas; and repeating a) and b) one or more times.

Abstract: The invention concerns a method of forming a graphene device, the method comprising: forming a graphene film (100) over a substrate; depositing, by gas phase deposition, a polymer material covering a surface of the graphene film (100); and removing the substrate from the graphene film (100), wherein the polymer material forms a support (102) for the graphene film (100).

Abstract: The invention concerns a method of forming a medical device, the method comprising: forming a graphene film (100) over a substrate (204); depositing, by gas phase deposition, a polymer material covering a surface of the graphene film (100); and removing the substrate (204) from the graphene film (100), wherein the polymer material forms a support (102) for the graphene film (100).

Abstract: The invention concerns a transparent heating device comprising: a graphene film fixed to a transparent substrate; a first electrode (205) connected to a first edge of the graphene film; and a second electrode (206) connected to a second edge of the graphene film, wherein there is a resistance gradient across the graphene film from the first electrode (205) to the second electrode (206).

Abstract: The invention concerns a method of forming a graphene layer involving: heating a support layer in a reaction chamber; and forming the graphene layer on a surface of the support layer by: a) during a first time period, introducing into the reaction chamber an organic compound gas to cause a formation of carbon atoms on the surface; b) during a second time period after the first time period, reducing a rate of introduction of the organic compound gas into the reaction chamber and introducing into the reaction chamber a further gas, wherein the further gas is a carbon etching gas; and repeating a) and b) one or more times.

Abstract: The invention concerns a method of forming a graphene layer involving: heating a support layer in a reaction chamber; and forming the graphene layer on a surface of the support layer by: a) during a first time period, introducing into the reaction chamber an organic compound gas to cause a formation of carbon atoms on the surface; b) during a second time period after the first time period, reducing a rate of introduction of the organic compound gas into the reaction chamber and introducing into the reaction chamber a further gas, wherein the further gas is a carbon etching gas; and repeating a) and b) one or more times.

Abstract: An embodiment of a graphene device includes a layered structure, first and second electrodes, and a dopant island. The layered structure includes a conductive layer, an insulating layer, and a graphene layer. The electrodes are coupled to the graphene layer. The dopant island is coupled to an exposed surface of the graphene layer between the electrodes. An embodiment of a method of using a graphene device includes providing the graphene device. A voltage is applied to the conductive layer of the graphene device. Another embodiment of a method of using a graphene device includes providing the graphene device without the dopant island. A dopant island is placed on an exposed surface of the graphene layer between the electrodes. A voltage is applied to the conductive layer of the graphene device. A response of the dopant island to the voltage is observed.

Abstract: The invention concerns a method of forming a graphene layer involving: heating a support layer in a reaction chamber; and forming the graphene layer on a surface of the support layer by: a) during a first time period, introducing into the reaction chamber an organic compound gas to cause a formation of carbon atoms on the surface; b) during a second time period after the first time period, reducing a rate of introduction of the organic compound gas into the reaction chamber and introducing into the reaction chamber a further gas, wherein the further gas is a carbon etching gas; and repeating a) and b) one or more times.

Abstract: The invention relates to a method of growing carbon nanotubes (5) on a substrate (1) using a hot-wire-assisted chemical vapor deposition method. The inventive method consists in first depositing a bilayer of titanium (12) and cobalt (13) on the substrate such that: the thickness of the titanium layer is between 0.5 and 5 nm, the thickness of the cobalt layer is between 0.25 and 10 nm, and the thickness of the cobalt layer is between half and double that of the titanium layer.

Abstract: An embodiment of a graphene device includes a layered structure, first and second electrodes, and a dopant island. The layered structure includes a conductive layer, an insulating layer, and a graphene layer. The electrodes are coupled to the graphene layer. The dopant island is coupled to an exposed surface of the graphene layer between the electrodes. An embodiment of a method of using a graphene device includes providing the graphene device. A voltage is applied to the conductive layer of the graphene device. Another embodiment of a method of using a graphene device includes providing the graphene device without the dopant island. A dopant island is placed on an exposed surface of the graphene layer between the electrodes. A voltage is applied to the conductive layer of the graphene device. A response of the dopant island to the voltage is observed.

Abstract: This invention relates to a process for manufacturing nanowire structures, the process comprising the following steps: manufacture of a thin semiconductor film (1) extending between a first terminal (4) and a second terminal (5), and passage of a current between the first and the second terminals so as to form at least one continuous overthickness (R1, R2, R3) in the thin semiconductor film by migration of a fraction of the semiconductor material, under the action of the current, the continuous overthickness being formed along the direction of the current that passes through the film.

Abstract: This invention relates to a process for manufacturing nanowire structures, the process comprising the following steps: manufacture of a thin semiconductor film (1) extending between a first terminal (4) and a second terminal (5), and passage of a current between the first and the second terminals so as to form at least one continuous overthickness (R1, R2, R3) in the thin semiconductor film by migration of a fraction of the semiconductor material, under the action of the current, the continuous overthickness being formed along the direction of the current that passes through the film.