Patents by Inventor Vincent Calvo

Vincent Calvo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10699902
    Abstract: The invention pertains to a process for producing a strained layer based on germanium-tin (GeSn). The process includes a step of producing a semiconductor stack containing a layer based on GeSn and having an initial strain value that is non-zero; a step of structuring the semiconductor stack so as to form a structured portion and a peripheral portion, the structured portion including a central section linked to the peripheral portion by at least two lateral sections having an average width greater than an average width of the central section; and a step of suspending the structured portion, the central section then having a final strain value higher than the initial value.
    Type: Grant
    Filed: August 23, 2017
    Date of Patent: June 30, 2020
    Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Vincent Reboud, Jean-Michel Hartmann, Alexei Tchelnokov, Vincent Calvo
  • Patent number: 10666019
    Abstract: A semiconductor structure including a semiconductor layer made of a crystalline semiconductor compound, a portion of the semiconductor layer which forms a suspended membrane above a carrier layer, the suspended membrane being formed from a tensilely stressed central segment and a plurality of lateral segments forming tensioning arms. The central segment includes at least one zone of thinned thickness.
    Type: Grant
    Filed: August 2, 2018
    Date of Patent: May 26, 2020
    Assignee: Commissariat a l'energie atomique et aux energies alternatives
    Inventors: Vincent Reboud, Alban Gassenq, Samuel Tardif, Vincent Calvo, Alexei Tchelnokov
  • Publication number: 20190244813
    Abstract: The invention pertains to a process for producing a strained layer based on germanium-tin (GeSn). The process includes a step of producing a semiconductor stack containing a layer based on GeSn and having an initial strain value that is non-zero; a step of structuring the semiconductor stack so as to form a structured portion and a peripheral portion, the structured portion including a central section linked to the peripheral portion by at least two lateral sections having an average width greater than an average width of the central section; and a step of suspending the structured portion, the central section then having a final strain value higher than the initial value.
    Type: Application
    Filed: August 23, 2017
    Publication date: August 8, 2019
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Vincent REBOUD, Jean-Michel HARTMANN, Alexei TCHELNOKOV, Vincent CALVO
  • Publication number: 20190191578
    Abstract: An electronic device or electronic device assembly may comprise a first portion and a second portion, a first magnet disposed inside the first portion and rotatable about a pivot axis with respect to the first portion, and a second magnet disposed inside the second portion and rotatable about a pivot axis with respect to the second portion. The first and second magnet may be configured to rotate so that the first and second magnets magnetically engage each other when the distance between the first and second magnet is equal to or smaller than a first distance.
    Type: Application
    Filed: February 22, 2019
    Publication date: June 20, 2019
    Inventors: Esa MÄÄTTÄ, Niko EIDEN, Otto HUITTINEN, Pasi KEMPPINEN, Antti KARILAINEN, Vincente Calvo ALONSO
  • Publication number: 20190044308
    Abstract: A semiconductor structure including a semiconductor layer made of a crystalline semiconductor compound, a portion of the semiconductor layer which forms a suspended membrane above a carrier layer, the suspended membrane being formed from a tensilely stressed central segment and a plurality of lateral segments forming tensioning arms. The central segment includes at least one zone of thinned thickness.
    Type: Application
    Filed: August 2, 2018
    Publication date: February 7, 2019
    Applicant: Commissariat a l'energie atomique et aux energies alternatives
    Inventors: Vincent REBOUD, Alban Gassenq, Samuel Tardif, Vincent Calvo, Alexei Tchelnokov
  • Patent number: 9774167
    Abstract: A method of production of a semiconducting structure including a strained portion tied to a support layer by molecular bonding, including the steps in which a cavity is produced situated under a structured part so as to strain a central portion by lateral portions, and the structured part is placed in contact and molecularly bonded with a support layer, wherein a consolidation annealing is performed, and a distal part of the lateral portions in relation to the strained portion is etched.
    Type: Grant
    Filed: September 30, 2016
    Date of Patent: September 26, 2017
    Assignee: Commissariat A l'Energie Atomique et aux Energies Alternatives
    Inventors: Alban Gassenq, Vincent Reboud, Kevin Guilloy, Vincent Calvo, Alexei Tchelnokov
  • Patent number: 9735317
    Abstract: The invention pertains to formation of a semiconducting portion (60) by epitaxial growth on a strained germination portion (40), comprising the steps in which a cavity (21) is produced under a structured part (11) by rendering free a support layer (30) situated facing the structured part (11), a central portion (40), termed the strained germination portion, then being strained; and a semiconducting portion (60) is formed by epitaxial growth on the strained germination portion (40), wherein the structured part (11) is furthermore placed in contact with the support layer (30) in such a way as to bind the structured part (11) of the support layer.
    Type: Grant
    Filed: September 30, 2016
    Date of Patent: August 15, 2017
    Assignee: Commissariat A L'Energie Atomique et aux Energies Alternatives
    Inventors: Vincent Reboud, Alban Gassenq, Kevin Guilloy, Vincent Calvo, Alexei Tchelnokov
  • Publication number: 20170093130
    Abstract: A method of production of a semiconducting structure including a strained portion tied to a support layer by molecular bonding, including the steps in which a cavity is produced situated under a structured part so as to strain a central portion by lateral portions, and the structured part is placed in contact and molecularly bonded with a support layer, wherein a consolidation annealing is performed, and a distal part of the lateral portions in relation to the strained portion is etched.
    Type: Application
    Filed: September 30, 2016
    Publication date: March 30, 2017
    Applicant: Commissariat a I'energie atomique et aux energies alternatives
    Inventors: Alban GASSENQ, Vincent REBOUD, Kevin GUILLOY, Vincent CALVO, Alexei TCHELNOKOV
  • Publication number: 20170092809
    Abstract: The invention pertains to formation of a semiconducting portion (60) by epitaxial growth on a strained germination portion (40), comprising the steps in which a cavity (21) is produced under a structured part (11) by rendering free a support layer (30) situated facing the structured part (11), a central portion (40), termed the strained germination portion, then being strained; and a semiconducting portion (60) is formed by epitaxial growth on the strained germination portion (40), wherein the structured part (11) is furthermore placed in contact with the support layer (30) in such a way as to bind the structured part (11) of the support layer.
    Type: Application
    Filed: September 30, 2016
    Publication date: March 30, 2017
    Applicant: Commissariat a I'energie atomique et aux energies alternatives
    Inventors: Vincent REBOUD, Alban GASSENQ, Kevin GUILLOY, Vincent CALVO, Alexei TCHELNOKOV
  • Patent number: 9502864
    Abstract: Optical and/or electronic device comprising a suspended, germanium-based membrane (20) and comprising an active zone (21) placed under tension by tensioning arms (23), said device being characterized in that it comprises at least one tensioning arm (23) comprising nonparallel lateral sides (32), the width of which increases with distance from the active zone (21).
    Type: Grant
    Filed: June 18, 2015
    Date of Patent: November 22, 2016
    Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Kévin Guilloy, Nicolas Pauc, Vincent Calvo, Vincent Reboud
  • Publication number: 20150372454
    Abstract: Optical and/or electronic device comprising a suspended, germanium-based membrane (20) and comprising an active zone (21) placed under tension by tensioning arms (23), said device being characterized in that it comprises at least one tensioning arm (23) comprising nonparallel lateral sides (32), the width of which increases with distance from the active zone (21).
    Type: Application
    Filed: June 18, 2015
    Publication date: December 24, 2015
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Kévin Guilloy, Nicolas Pauc, Vincent Calvo, Vincent Reboud