Patents by Inventor Vincent Cosnier

Vincent Cosnier has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Integrated electronic circuit including a thin film portion based on hafnium oxide
    Patent number: 8154091
    Abstract: An integrated electronic circuit has a thin layer portion based on hafnium oxide. This portion additionally contains magnesium atoms, so that the portion is in the form of a hafnium-and-magnesium mixed oxide. Such a portion has a high dielectric constant and a very low leakage current. It is particularly suitable for forming a part of a gate insulation layer of a MOS transistor or a part of a MIM capacitor dielectric.
    Type: Grant
    Filed: April 25, 2008
    Date of Patent: April 10, 2012
    Assignees: Centre National de la Recherche Scientifique-CNRS, Institut National Polytechnique de Grenoble
    Inventors: Catherine Dubourdieu, Erwan Yann Rauwel, Vincent Cosnier, Sandrine Lhostis, Daniel-Camille Bensahel
  • INTEGRATED ELECTRONIC CIRCUIT INCLUDING A THIN FILM PORTION BASED ON HAFNIUM OXIDE
    Publication number: 20100059834
    Abstract: An integrated electronic circuit has a thin layer portion based on hafnium oxide. This portion additionally contains magnesium atoms, so that the portion is in the form of a hafnium-and-magnesium mixed oxide. Such a portion has a high dielectric constant and a very low leakage current. It is particularly suitable for forming a part of a gate insulation layer of a MOS transistor or a part of a MIM capacitor dielectric.
    Type: Application
    Filed: April 25, 2008
    Publication date: March 11, 2010
    Applicants: STMicroelectronics (Crolles) SAS, Centre National de La Recherche Scientifique - CNRS -, Institut National Polytechnique De Grenoble
    Inventors: Catherine Dubourdieu, Erwan Yann Ruawel, Vincent Cosnier, Sandrine Lhostis, Daniel-Camille Bensahel
  • Heteroatomic single-crystal layers
    Patent number: 7381267
    Abstract: A method for forming, by epitaxy, a heteroatomic single-crystal semiconductor layer on a single-crystal semiconductor wafer, the crystal lattices of the layer and of the wafer being different, including forming, before the epitaxy, in the wafer surface, at least one ring of discontinuities around a useful region.
    Type: Grant
    Filed: April 1, 2004
    Date of Patent: June 3, 2008
    Assignee: STMicroelectronics S.A.
    Inventors: Daniel Bensahel, Olivier Kermarrec, Yves Morand, Yves Campidelli, Vincent Cosnier
  • Method of fabricating a semiconductor device comprising a gate dielectric made of high dielectric permittivity material
    Patent number: 7129563
    Abstract: A process and a device for fabricating a semiconductor device having a gate dielectric made of high-k material, includes a step of depositing, directly on the gate dielectric, a first layer of Si1?xGex, where 0.5<x?1, at a temperature substantially below the temperature at which a poly-Si is deposited by thermal chemical vapor deposition (CVD).
    Type: Grant
    Filed: April 1, 2004
    Date of Patent: October 31, 2006
    Assignee: STMicroelectronics SA
    Inventors: Vincent Cosnier, Yves Morand, Olivier Kermarrec, Daniel Bensahel, Yves Campidelli
  • Method of fabricating a semiconductor device comprising a gate dielectric made of high dielectric permittivity material
    Publication number: 20040256699
    Abstract: A process and a device for fabricating a semiconductor device having a gate dielectric made of high-k material, includes a step of depositing, directly on the gate dielectric, a first layer of Si1-xGex, where 0.5<x<1, at a temperature substantially below the temperature at which a poly-Si is deposited by thermal chemical vapor deposition (CVD).
    Type: Application
    Filed: April 1, 2004
    Publication date: December 23, 2004
    Applicant: STMICROELECTRONICS SA
    Inventors: Vincent Cosnier, Yves Morand, Olivier Kermarrec, Daniel Bensahel, Yves Campidelli
  • Heteroatomic single-crystal layers
    Publication number: 20040250752
    Abstract: A method for forming, by epitaxy, a heteroatomic single-crystal semiconductor layer on a single-crystal semiconductor wafer, the crystal lattices of the layer and of the wafer being different, including forming, before the epitaxy, in the wafer surface, at least one ring of discontinuities around a useful region.
    Type: Application
    Filed: April 1, 2004
    Publication date: December 16, 2004
    Inventors: Daniel Bensahel, Olivier Kermarrec, Yves Morand, Yves Campidelli, Vincent Cosnier