Abstract: A system for suppressing low frequency magnetic noise from magnetoresistive sensors, the system including at least one magneto-resistive sensor including a free magnetic layer having a variable magnetisation, and a system for modifying magnetisation of the free magnetic layer, wherein the system for modifying magnetisation of the free layer is adapted to drive dynamics of the magnetisation of the free magnetic layer.

Abstract: Disclosed is a method for generating, from a first electric current having a first frequency, a plurality of second currents each having a second respective frequency component, the method including the following steps: supplying a frequency distributor including a first set of pillars including a layer made from a first magnetic material and having a resonance frequency; exciting each pillar of the first set with an electromagnetic field having the first frequency, the ratio between twice the resonance frequency of each pillar of the first set and the first frequency being equal, to within ten percent, to a first natural integer; and generating, by each pillar of the first set, a second frequency component in the second respective current.

Abstract: Disclosed is a method for generating, from a first electric current having a first frequency, a plurality of second currents each having a second respective frequency component, the method including the following steps: supplying a frequency distributor including a first set of pillars including a layer made from a first magnetic material and having a resonance frequency; exciting each pillar of the first set with an electromagnetic field having the first frequency, the ratio between twice the resonance frequency of each pillar of the first set and the first frequency being equal, to within ten percent, to a first natural integer; and generating, by each pillar of the first set, a second frequency component in the second respective current.

Abstract: A device for generating a random electric signal, including an input duct, an output duct, a generator of magnetic particles generating magnetic particles in the input duct, a diffusion chamber connected to the input duct and the output duct, wherein the diffusion chamber is designed to diffuse the generated magnetic particles, a displacement unit for displacement of the generated magnetic particles towards the diffusion chamber, and a converter that is designed to generate an electrical signal proportional to a characteristic, wherein the characteristic is the particle density in the diffusion chamber or the passage of magnetic particles at a predetermined location of an output duct connected to the diffusion chamber.

Abstract: A device for generating a random electric signal, including an input duct, an output duct, a generator of magnetic particles generating magnetic particles in the input duct, a diffusion chamber connected to the input duct and the output duct, wherein the diffusion chamber is designed to diffuse the generated magnetic particles, a displacement unit for displacement of the generated magnetic particles towards the diffusion chamber, and a converter that is designed to generate an electrical signal proportional to a characteristic, wherein the characteristic is the particle density in the diffusion chamber or the passage of magnetic particles at a predetermined location of an output duct connected to the diffusion chamber.

Abstract: A spectrum analyzer for a signal IRF comprising a plurality of frequencies fi comprises N entities each made up of a structure formed by a stack of magnetic and non-magnetic layers having in at least one of the magnetic layers a magnetic configuration in the shape of a vortex, the excitation modes of the magnetic configuration being suitable for detecting the frequencies contained in an incident signal in real time, each entity having a first lower electrode and a second upper electrode, a voltage-measuring device suitable for measuring an electric voltage showing the presence of a frequency fk in the analyzed signal IRF, the device being connected to the lower electrode and to the upper electrode, a measurement-processing device suitable for determining the value of the frequencies fk in the signal IRF, and a line carrying the signal to be analyzed to each of the entities.

Abstract: Disclosed is a system (10) for generating skyrmions, including: a gun (12) including a wall-forming region (14) made from a first material, the region (14) defining an outer space (16) made from a second material different from the first material and an inner space (18) made from a third material different from the first material, the second material and the third material being magnetic materials; and a magnetization reversal device (26) that can reverse the magnetization at the interface between the region (14) and the inner space (18).

Abstract: Disclosed is a system (10) for generating skyrmions, including: a gun (12) including a wall-forming region (14) made from a first material, the region (14) defining an outer space (16) made from a second material different from the first material and an inner space (18) made from a third material different from the first material, the second material and the third material being magnetic materials; and a magnetisation reversal device (26) that can reverse the magnetisation at the interface between the region (14) and the inner space (18).

Abstract: A storage device, comprising at least one spintronic element suitable for representing a state among at least n states associated with the spintronic element, n>1, characterized in that each of the n states is associated with at least one characteristic of a group of magnetic skyrmions in the spintronic element, and in that said characteristic associated with a state n oi is different from said characteristic associated with a state n oj when the states n oi and n oj are two different states among the n states.

Abstract: A storage device, comprising at least one spintronic element suitable for representing a state among at least n states associated with the spintronic element, n>1, characterized in that each of the n states is associated with at least one characteristic of a group of magnetic skyrmions in the spintronic element, and in that said characteristic associated with a state n ?i is different from said characteristic associated with a state n ?j when the states n ?i and n ?j are two different states among the n states.

Abstract: A spectrum analyzer for a signal IRF comprising a plurality of frequencies fi comprises N entities each made up of a structure formed by a stack of magnetic and non-magnetic layers having in at least one of the magnetic layers a magnetic configuration in the shape of a vortex, the excitation modes of the magnetic configuration being suitable for detecting the frequencies contained in an incident signal in real time, each entity having a first lower electrode and a second upper electrode, a voltage-measuring device suitable for measuring an electric voltage showing the presence of a frequency fk in the analyzed signal IRF, the device being connected to the lower electrode and to the upper electrode, a measurement-processing device suitable for determining the value of the frequencies fk in the signal IRF, and a line carrying the signal to be analyzed to each of the entities.

Abstract: An oscillator is provided including a nanopillar and current injector for injecting a power supply current through the nanopillar, the nanopillar including at least one pattern including first and second layers made from a ferromagnetic material separated from each other by an intermediate layer made from a non-magnetic material. Each of the first and second ferromagnetic layers is prepared such that its remanent magnetic configuration corresponds to a vortex configuration and the polarity of the vortex core of the first layer is opposite the polarity of the vortex core of the second layer. The intermediate layer can allow repellant magnetic coupling between the two vortices of the first and second layers, for a zero intensity of the power supply current and a zero amplitude of the outside magnetic field.

Abstract: A device with adjustable resistance includes two magnetic elements separated by an insulating or semi-conductor element. The resistance of the device depends on the position of a magnetic wall in one of the magnetic elements, the magnetic wall separating two areas of said magnetic element each having a separate homogeneous direction of magnetization. The device comprises means for moving the magnetic wall in the magnetic element by applying a spin-polarized electric current, such that the resistance of the device is adjustable in a continuous range of values. The invention is useful in neuromimetic circuits, neural networks and bio-inspired computers.

Abstract: An oscillator is provided including a nanopillar and current injector for injecting a power supply current through the nanopillar, the nanopillar including at least one pattern including first and second layers made from a ferromagnetic material separated from each other by an intermediate layer made from a non-magnetic material. Each of the first and second ferromagnetic layers is prepared such that its remanent magnetic configuration corresponds to a vortex configuration and the polarity of the vortex core of the first layer is opposite the polarity of the vortex core of the second layer. The intermediate layer can allow repellant magnetic coupling between the two vortices of the first and second layers, for a zero intensity of the power supply current and a zero amplitude of the outside magnetic field.

Abstract: A device with adjustable resistance includes two magnetic elements separated by an insulating or semi-conductor element. The resistance of the device depends on the position of a magnetic wall in one of the magnetic elements, the magnetic wall separating two areas of said magnetic element each having a separate homogeneous direction of magnetization. The device comprises means for moving the magnetic wall in the magnetic element by applying a spin-polarized electric current, such that the resistance of the device is adjustable in a continuous range of values. The invention is useful in neuromimetic circuits, neural networks and bio-inspired computers.

Abstract: The general field of the invention is that of spintronics, namely the field of electronics using the magnetic spin properties of electrons. The main fields of application are the very large-scale magnetic storage of information and the measurement of local magnetic fields. The object of the invention is to considerably reduce the energy needed to reverse the magnetic domains of the ferromagnetic elements of submicron dimensions using the mechanism of the domain wall displacements that is induced either by just a current of spin-polarized carriers or by the combination of a current of spin-polarized carriers and a magnetic field, at least one of these being variable. This domain wall displacement results in a change of magnetic polarization in a specified switching zone. Several devices according to the invention are described that possess from one switching zone up to a plurality of switching zones according to the invention.

Abstract: The general field of the invention is that of spintronics, namely the field of electronics using the magnetic spin properties of electrons. The main fields of application are the very large-scale magnetic storage of information and the measurement of local magnetic fields. The object of the invention is to considerably reduce the energy needed to reverse the magnetic domains of the ferromagnetic elements of submicron dimensions using the mechanism of the domain wall displacements that is induced either by just a current of spin-polarized carriers or by the combination of a current of spin-polarized carriers and a magnetic field, at least one of these being variable. This domain wall displacement results in a change of magnetic polarization in a specified switching zone. Several devices according to the invention are described that possess from one switching zone up to a plurality of switching zones according to the invention.

Abstract: The disclosure relates to a device for controlling magnetization reversal in a controlled ferromagnetic system such as a magnetic memory element, without using an external magnetic field, wherein it comprises between two flat electrodes a magnetic control part comprising, starting from the first electrode, a first ferromagnetic layer, a non-magnetic layer, and a second ferromagnetic layer, and the second of said two flat electrodes, the thickness of said second ferromagnetic layer being less than that of said first layer, and the thickness of said second electrode being sufficiently small to enable magnetic coupling between said second ferromagnetic layer and the system controlled by the control device.

Abstract: The disclosure relates to a device for controlling magnetization reversal in a controlled ferromagnetic system such as a magnetic memory element, without using an external magnetic field, wherein it comprises between two flat electrodes a magnetic control part comprising, starting from the first electrode, a first ferromagnetic layer, a non-magnetic layer, and a second ferromagnetic layer, and the second of said two flat electrodes, the thickness of said second ferromagnetic layer being less than that of said first layer, and the thickness of said second electrode being sufficiently small to enable magnetic coupling between said second ferromagnetic layer and the system controlled by the control device.