Abstract: The recording of surface topology is obtained by first bringing the surface into contact with the imaging material-coated side of a dry process dispersion type recording film comprising a transparent substrate on which is coated a very thin, high optical density, opaque body of imaging material, preferably coated with a thin abrasion-resistant protective layer. Radiant energy is then momentarily directed to the imaging material through the transparent substrate. When the heat generated by the absorbed radiant energy is above a given threshold value at a particular location of the imaging material, the material deforms and disperses thereat to form connected or unconnected globules with spaces therebetween. Upon termination of the radiant energy, the dispersed material becomes frozen in place.

Abstract: The production of improved photovoltaic solar cells and the like comprising both p and n type deposited silicon film regions is made possible by a process which provides more efficient p-doped silicon films with higher acceptor concentrations. The process utilizes previously known p-dopant metal or boron gaseous materials in unique forms and conditions in a glow discharge silicon preferably hydrogen and fluorine compensated deposition process. Thus, p-dopant metals like aluminum may be used in an elemental evaporated form, rather than in a gaseous compound form heretofore ineffectively used and deposited with the glow discharge deposited silicon on substrates kept at lower temperatures where fluorine and hydrogen compensation is most effective.

Abstract: Improved method for the generation of and deposition of semiconductor alloys from a plasma are disclosed. The uniformity of deposited layers of amorphous semiconductor material is enhanced by maintaining the frequency of an ionizing a.c. field in the plasma region between the cathode of a glow discharge chamber and the active surface of a substrate at about 50 to 200 kiloHertz to allow the favorable deposition of material at relatively low power. Improved sample quality and deposition control (including uniformity) is realized at even high frequencies by the introduction of a quantity of inert gas into the chamber to alter the energy profile of the plasma.

Abstract: The imaging layers coated side of a heat-responsive recording medium is selectively heat-sinked by the raised portions of live skin tissue contacting the same so that only the unheat-sinked portions of the recording medium will reach an imaging temperature. The source of heat for the film may be a flash lamp directed against the opposite substrate side of the film where the electromagnetic energy thereof is converted into heat when absorbed by the substrate, or may be a source of externally applied heat transmitted through the substrate to the imaging layer of the film. In the latter case, the recording medium is preferably initially in spaced relationship with a heat contact plate which is to be contacted by a heat source, which may be the end face of a piston either pre-heated to a given temperature or having a current heatable resistance thereon to be pulsed with current. In the former case the polymer end face preferably has a low heat conductivity coating thereon.

Abstract: In an imaging film having a substrate over which is deposited a thin, opaque layer of an imaging material there is located on at least the outer side of said opaque imaging layer and, better still, on the opposite sides of said opaque layer of imaging material, thin, preferably vapor deposited, passivating layers forming a barrier against passage of oxygen and moisture. The passivating layer, or layers, in a flexible continuous amorphous film having a thickness generally no greater than about 500 Angstroms (A.degree.) and preferably less than 200 A.degree. and comprising an alloy or mixture of a Group IV oxide, most advantageously germanium oxide, and a stabilizing agent or agents, more particularly one or more different oxides of a metal or a semiconductor or a metal fluoride which stabilizes the amorphous character and chemical inertness of the Group IV oxide even when subjected to the elements of the surrounding atmosphere.

Abstract: The imaging layer coated side of a heat-responsive recording medium is selectively heat-sinked by the raised portions of live skin tissue contacting the same so that only the unheat-sinked portions of the recording medium will reach an imaging temperature. The source of heat for the film may be a flash lamp directed against the opposite substrate side of the film where the electromagnetic energy thereof is converted into heat when absorbed by the substrate, or may be a source of externally applied heat transmitted through the substrate to the imaging layer of the film. In the latter case, the recording medium is preferably initially in spaced relationship with a heat contact plate which is to be contacted by a heat source, which may be the end face of a piston either pre-heated to a given temperature or having a current heatable resistance thereon to be pulsed with current. In the former case the plunger end face preferably has a low heat conductivity coating thereon.

Abstract: A dry process high sensitivity imaging film includes a solid, high optical density and substantially opaque film of dispersion imaging material deposited on a substrate. The film of dispersion imaging material comprises a plurality of separate layers of different and substantially mutually insoluble metal components having relatively high melting points and relatively low melting point eutectics, and interfaces between said layers having relatively low melting points.

Abstract: A dry process high sensitivity imaging film includes a solid, high optical density and substantially opaque film of dispersion imaging material deposited on a substrate. The film of dispersion imaging material comprises a plurality of separate layers of different and substantially mutually insoluble metal components having relatively high melting points and relatively low melting point eutectics, and interfaces between said layers having relatively low melting points.