Patents by Inventor Vincent Deno

Vincent Deno has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • FLUORINE BASED CLEANING FOR PLASMA DOPING APPLICATIONS
    Publication number: 20240035154
    Abstract: A method of cleaning a plasma chamber is disclosed. Periodically, a cleaning process is performed. The cleaning process comprises introducing a mixture of fluoride molecules and argon into the plasma chamber and creating a plasma. The fluoride molecules are ionized and interact with the deposited material on the chamber walls. This causes the fluorine ions to bond to the deposited material, which typically results in a gas that can be exhausted from the plasma chamber. When the deposited material has been removed, the amount of free fluorine within the plasma chamber increases. This increase in fluorine may be used to determine when the plasma chamber is cleaned.
    Type: Application
    Filed: July 27, 2022
    Publication date: February 1, 2024
    Inventors: Vikram M. Bhosle, Meng Cai, Deven Matthew Raj Mittal, Vincent Deno
  • Profile adjustment in plasma ion implanter
    Patent number: 7687787
    Abstract: A method to provide a dopant profile adjustment solution in plasma doping systems for meeting both concentration and junction depth requirements. Bias ramping and bias ramp rate adjusting may be performed to achieve a desired dopant profile so that surface peak dopant profiles and retrograde dopant profiles are realized. The method may include an amorphization step in one embodiment.
    Type: Grant
    Filed: November 7, 2008
    Date of Patent: March 30, 2010
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Ludovic Godet, George D. Papasouliotis, Ziwei Fang, Richard Appel, Vincent Deno, Vikram Singh, Harold M. Persing
  • Profile adjustment in plasma ion implanter
    Patent number: 7528389
    Abstract: A method and apparatus are directed to providing a dopant profile adjustment solution in plasma doping systems for meeting both concentration and junction depth requirements. Bias ramping and bias ramp rate adjusting may be performed to achieve a desired dopant profile so that shallow and abrupt junctions in vertical and lateral directions are realized that are critical to device scaling in plasma doping systems.
    Type: Grant
    Filed: March 15, 2006
    Date of Patent: May 5, 2009
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Ziwei Fang, Richard Appel, Vincent Deno, Vikram Singh, Harold M. Persing
  • PROFILE ADJUSTMENT IN PLASMA ION IMPLANTER
    Publication number: 20090061605
    Abstract: A method to provide a dopant profile adjustment solution in plasma doping systems for meeting both concentration and junction depth requirements. Bias ramping and bias ramp rate adjusting may be performed to achieve a desired dopant profile so that surface peak dopant profiles and retrograde dopant profiles are realized. The method may include an amorphization step in one embodiment.
    Type: Application
    Filed: November 7, 2008
    Publication date: March 5, 2009
    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventors: Ludovic GODET, George D. Papasouliotis, Ziwei Fang, Richard Appel, Vincent Deno, Vikram Singh, Harold M. Persing
  • Profile adjustment in plasma ion implanter
    Publication number: 20060289799
    Abstract: A method and apparatus are directed to providing a dopant profile adjustment solution in plasma doping systems for meeting both concentration and junction depth requirements. Bias ramping and bias ramp rate adjusting may be performed to achieve a desired dopant profile so that shallow and abrupt junctions in vertical and lateral directions are realized that are critical to device scaling in plasma doping systems.
    Type: Application
    Filed: March 15, 2006
    Publication date: December 28, 2006
    Applicant: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Ziwei Fang, Richard Appel, Vincent Deno, Vikram Singh, Harold Persing