Patents by Inventor Vincent Ducere

Vincent Ducere has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Fluid sensor for sensing properties of a fluid comprising a tuning fork mechanical resonator
    Patent number: 11921073
    Abstract: A fluid sensor includes a tuning fork mechanical resonator including a base and a tine projecting from the base along a longitudinal direction of the tine, and a pair of electrodes disposed on the tine. The base and the tine are formed from a piezoelectric material including lithium tantalate. The electrodes are exposed to a fluid.
    Type: Grant
    Filed: March 31, 2022
    Date of Patent: March 5, 2024
    Assignee: MEAS France
    Inventors: Fabien Gayrard, Antoine Sirven, Vincent Ducere
  • FLUID SENSOR FOR SENSING PROPERTIES OF A FLUID COMPRISING A TUNING FORK MECHANICAL RESONATOR
    Publication number: 20220317077
    Abstract: A fluid sensor includes a tuning fork mechanical resonator including a base and a tine projecting from the base along a longitudinal direction of the tine, and a pair of electrodes disposed on the tine. The base and the tine are formed from a piezoelectric material including lithium tantalate. The electrodes are exposed to a fluid.
    Type: Application
    Filed: March 31, 2022
    Publication date: October 6, 2022
    Applicant: Meas France
    Inventors: Fabien Gayrard, Antoine Sirven, Vincent Ducere
  • Capacitive sensor integrated onto semiconductor circuit
    Patent number: 9239310
    Abstract: There is disclosed a capacitive sensor on a passivation layer of a semiconductor circuit such as an ASIC, and a method for manufacturing such sensor. The system and method may comprise: forming a bottom electrode layer and landing pad on a portion of the passivation layer located over active circuitry of the ASIC; forming a gas sensitive layer onto the bottom electrode layer and the landing pad; creating a via through the gas sensitive layer to expose a portion of the landing pad; forming a top electrode layer onto the gas sensitive layer, wherein the top electrode layer completely overlays a surface area of the bottom electrode layer, and wherein the forming process for the top electrode layer deposits a portion of the top electrode layer into the via hole, thereby forming an electrical connection between the top electrode layer and the landing pad.
    Type: Grant
    Filed: January 10, 2014
    Date of Patent: January 19, 2016
    Assignee: MEAS FRANCE
    Inventors: Jean-Paul Guillemet, Predrag Drljaca, Daniel Beeler, Romuald Gallorini, Vincent Ducere
  • CAPACITIVE SENSOR INTEGRATED ONTO SEMICONDUCTOR CIRCUIT
    Publication number: 20140197500
    Abstract: There is disclosed a capacitive sensor on a passivation layer of a semiconductor circuit such as an ASIC, and a method for manufacturing such sensor. The system and method may comprise: forming a bottom electrode layer and landing pad on a portion of the passivation layer located over active circuitry of the ASIC; forming a gas sensitive layer onto the bottom electrode layer and the landing pad; creating a via through the gas sensitive layer to expose a portion of the landing pad; forming a top electrode layer onto the gas sensitive layer, wherein the top electrode layer completely overlays a surface area of the bottom electrode layer, and wherein the forming process for the top electrode layer deposits a portion of the top electrode layer into the via hole, thereby forming an electrical connection between the top electrode layer and the landing pad.
    Type: Application
    Filed: January 10, 2014
    Publication date: July 17, 2014
    Inventors: Jean-Paul Guillemet, Predrag Drljaca, Daniel Beeler, Romuald Gallorini, Vincent Ducere