Abstract: A method for manufacturing a magnetic read head having a very narrow track width. The method includes the use of a non-Si containing photoresist to form a mask prior to ion milling to define the track-width of the sensor. Previously only Si-containing resists were used. The Si in the resist turned to an oxide, which allowed the photoresist to withstand the reactive ion etching used for image transfer to an underlying hard mask. The Si-containing resist, however, has limitations as to how small the mask can be made. It has been found that a non-Si-containing resist provides better resolution at very narrow track-width definition, and also provides good temperature resistance. Some modifications to the process allow the non-Si-containing resist to be used in the construction of the magnetic read sensor.