Abstract: According to at least one aspect of the disclosure, a front-end module is provided comprising an input configured to receive a radio-frequency signal, an output configured to be coupled to an antenna, a balun coupled to the output, one or more power amplifiers coupled to the input, and an inverter coupled between the one or more power amplifiers and the balun, the inverter being configured to provide output impedance matching to the one or more power amplifiers.

Abstract: Apparatus and methods for power amplifier systems with balun and shunt capacitor are disclosed. In certain embodiments, a front-end system includes a shunt capacitor, a balun having an input side and an output side, and power amplifier stages that operate in parallel with one another to amplify a radio frequency input signal. The power amplifier stages include a first power amplifier stage having a first output coupled to the shunt capacitor and to a first input terminal on the input side of the balun, and a second power amplifier stage having a second output coupled to a second input terminal on the input side of the balun.

Abstract: Apparatus and methods for power amplifiers with broadband matching networks are disclosed. In certain embodiments, a mobile device includes a transceiver that generates a radio frequency input signal, and a front-end system including a compound semiconductor die and a silicon switch die. The compound semiconductor die includes a power amplifier including one or more power amplifier stages that amplify the radio frequency input signal to generate a radio frequency output signal. The silicon switch die includes a band selection switch that receives the radio frequency output signal. The compound semiconductor die and the silicon switch die each include at least one controllable impedance for providing a bandwidth adjustment to the power amplifier.

Abstract: A method of preserving one or more chemical and/or biological species in a polymer matrix comprising pullulan and trehalose is described. The method includes combining the one or more chemical and/or biological species, an aqueous pullulan and a trehalose solution and drying the resultant mixture to provide a solid polymeric matrix in the form of a powder and/or with a water content of less than 10 wt %. The polymeric matrix comprising the one or more chemical and/or biological species and its use, for example, in biological preparations and medicaments is also described.

Abstract: A pressure sensing device including an elongate housing configured to be at least partially inserted into a user, and that defines an external surface having a proximal end and a distal end defining a longitudinal axis therebetween. The device includes a first pressure sensor, configured to sense pressure applied to a first portion of the external surface and to convert the sensed pressure to first pressure data, and a second pressure sensor, configured to sense pressure applied to a second portion of the external surface and to convert the sensed pressure to second pressure data. Sensor is spaced, along the longitudinal axis, toward the distal end from sensor.

Abstract: Preparing items for a customer in advance of a fitting session. After receiving preliminary item selections, determining a fitting date and time at a fitting location. Then, determining a final item selection from the preliminary item selections not more than 48 hours before the fitting session. The customer does not commit to purchase the final item selection. After determination of the final item selection, locking the final item selection and locating the preliminary items between multiple locations and, using an automated mechanical system, assembling the preliminary items into a lot before sorting the lot into transfer bin(s). Then, transferring the bin to the fitting location in advance of the fitting session. At the date of the session, before the time of the session, preparing a final lot from the transferred bin and storing the prepared final lot in a temporary storage system operating in the building at the fitting location.

Abstract: A method of preserving the one or more chemical and/or biological species in a polymer matrix comprising pullulan and trehalose is described. The method includes combining the one or more chemical and/or biological species, an aqueous pullulan and a trehalose solution and drying the resultant mixture to provide a solid polymeric matrix. A polymeric matrix comprising one or more chemical and/or biological species and its use, for example, on surfaces for food preparation, for food preservation and in biological preparations is also described.

Abstract: A method of preserving the one or more chemical and/or biological species in a polymer matrix comprising pullulan and trehalose is described. The method includes combining the one or more chemical and/or biological species, an aqueous pullulan and a trehalose solution and drying the resultant mixture to provide a solid polymeric matrix. A polymeric matrix comprising one or more chemical and/or biological species and its use, for example, on surfaces for food preparation, for food preservation and in biological preparations is also described.

Abstract: A method of preserving the one or more chemical and/or biological species in a polymer matrix comprising pullulan and trehalose is described. The method includes combining the one or more chemical and/or biological species, an aqueous pullulan and a trehalose solution and drying the resultant mixture to provide a solid polymeric matrix. A polymeric matrix comprising one or more chemical and/or biological species and its use, for example, on surfaces for food preparation, for food preservation and in biological preparations is also described.

Abstract: The present invention provides a method of inducing stress in a semiconductor device substrate by applying an ion implantation to a gate region before a source/drain annealing process. The source/drain region may then be annealed along with the gate which will cause the gate to expand in certain areas due to said ion implantation. As a result, stress caused by said expansion of the gate is transferred to the channel region in the semiconductor substrate.

Abstract: The present invention provides a method of inducing stress in a semiconductor device substrate by applying an ion implantation to a gate region before a source/drain annealing process. The source/drain region may then be annealed along with the gate which will cause the gate to expand in certain areas due to said ion implantation. As a result, stress caused by said expansion of the gate is transferred to the channel region in the semiconductor substrate.

Abstract: The present invention provides a method of inducing stress in a semiconductor device substrate by applying an ion implantation to a gate region before a source/drain annealing process. The source/drain region may then be annealed along with the gate which will cause the gate to expand in certain areas due to said ion implantation. As a result, stress caused by said expansion of the gate is transferred to the channel region in the semiconductor substrate.

Abstract: A method for forming a package-on-package structure is disclosed. The method comprises the step of providing a first semiconductor package. The first semiconductor package has at least one encapsulation layer formed on at least one side of the first semiconductor package. The method also involves the step of securing the first semiconductor package to a surface. The surface is adapted for receiving the first semiconductor package. The method further involves the step of reducing the thickness of the at least one encapsulation layer to a predetermined thickness. The at least one encapsulation layer having a portion distal the surface removed. More specifically, the thickness of the at least one encapsulation layer is reduced for providing a predetermined clearance from a second semiconductor package attachable to the first semiconductor package.

Abstract: A method for forming a semiconductor device is presented. The method includes providing a substrate prepared with first and second regions with a first device layer. A second device layer including nanocrystals is also formed. A cover layer is provided over the second device layer. The cover layer is patterned to expose portions of the second device layer in the first and second regions. The exposed portions of the second device layer in the first and second regions are processed to form modified portions. The processing of the exposed portions at least reduces the nanocrystals to a diameter below a threshold diameter in the modified portions. The modified portions are removed.

Abstract: A method for forming a semiconductor device is presented. The method includes providing a substrate prepared with first and second regions with a first device layer. A second device layer including nanocrystals is also formed. A cover layer is provided over the second device layer. The cover layer is patterned to expose portions of the second device layer in the first and second regions. The exposed portions of the second device layer in the first and second regions are processed to form modified portions. The processing of the exposed portions at least reduces the nanocrystals to a diameter below a threshold diameter in the modified portions. The modified portions are removed.

Abstract: A method for forming a package-on-package structure is disclosed. The method comprises the step of providing a first semiconductor package. The first semiconductor package has at least one encapsulation layer formed on at least one side of the first semiconductor package. The method also involves the step of securing the first semiconductor package to a surface. The surface is adapted for receiving the first semiconductor package. The method further involves the step of reducing the thickness of the at least one encapsulation layer to a predetermined thickness. The at least one encapsulation layer having a portion distal the surface removed. More specifically, the thickness of the at least one encapsulation layer is reduced for providing a predetermined clearance from a second semiconductor package attachable to the first semiconductor package.

Abstract: A method (and semiconductor device) of fabricating a semiconductor device provides a shallow trench isolation (STI) structure or region by implanting ions in the STI region. After implantation, the region (of substrate material and ions of a different element) is thermally annealed producing a dielectric material operable for isolating two adjacent field-effect transistors (FET). This eliminates the conventional steps of removing substrate material to form the trench and refilling the trench with dielectric material. Implantation of nitrogen ions into an STI region adjacent a p-type FET applies a compressive stress to the transistor channel region to enhance transistor performance. Implantation of oxygen ions into an STI region adjacent an n-type FET applies a tensile stress to the transistor channel region to enhance transistor performance.

Abstract: The present invention provides a method of inducing stress in a semiconductor device substrate by applying an ion implantation to a gate region before a source/drain annealing process. The source/drain region may then be annealed along with the gate which will cause the gate to expand in certain areas due to said ion implantation. As a result, stress caused by said expansion of the gate is transferred to the channel region in the semiconductor substrate.

Abstract: Devices with embedded silicon or germanium nanocrystals, fabricated using ion implantation, exhibit superior data-retention characteristics relative to conventional floating-gate devices. However, the prior art use of ion implantation for their manufacture introduces several problems. These have been overcome by initial use of rapid thermal oxidation to grow a high quality layer of thin tunnel oxide. Chemical vapor deposition is then used to deposit a germanium doped oxide layer. A capping oxide is then deposited following which the structure is rapid thermally annealed to synthesize the germanium nanocrystals.