Abstract: Germanium (Ge)-Silicon (Si) structures, optoelectronic devices and method for forming same. A structure comprises a Si substrate, a Ge seed layer and a Ge epitaxial layer separated by respective interfaces that share a common plane normal, wherein the Si substrate and the Ge seed layer have a same first doping type with a first doping level, and a locally doped region formed in the Si layer adjacent to the Ge seed layer and having a second doping type with a second doping level, wherein the locally doped region is designed to reduce leakage currents between the Si substrate and the Ge epitaxial layer when an electrical bias is applied to the structure.

Abstract: Photodetectors comprising a P type Ge region having a first region thickness and a first doping concentration and a N type GaAs region having a second region thickness and a second doping concentration smaller than the first doping concentration by at least one order of magnitude.

Abstract: Germanium (Ge)-Silicon (Si) structures, optoelectronic devices and method for forming same. A structure comprises a Si substrate, a Ge seed layer and a Ge epitaxial layer separated by respective interfaces that share a common plane normal, wherein the Si substrate and the Ge seed layer have a same first doping type with a first doping level, and a locally doped region formed in the Si layer adjacent to the Ge seed layer and having a second doping type with a second doping level, wherein the locally doped region is designed to reduce leakage currents between the Si substrate and the Ge epitaxial layer when an electrical bias is applied to the structure.

Abstract: A device and method for expediting spectral measurement in metrological activities during semiconductor device fabrication through interferometric spectroscopy of white light illumination during calibration, overlay, and recipe creation.

Abstract: A device and method for expediting spectral measurement in metrological activities during semiconductor device fabrication through interferometric spectroscopy of white light illumination during calibration, overlay, and recipe creation.

Abstract: Photodetectors comprising a P type Ge region having a first region thickness and a first doping concentration and a N type GaAs region having a second region thickness and a second doping concentration smaller than the first doping concentration by at least one order of magnitude.

Abstract: A device and method for expediting spectral measurement in metrological activities during semiconductor device fabrication through interferometric spectroscopy of white light illumination during calibration, overlay, and recipe creation.

Abstract: A method of overlay control in silicon wafer manufacturing comprises firstly locating a target comprising a diffraction grating on a wafer layer; and then measuring the alignment of patterns in successive layers of the wafer. The location of the target may be done by the pupil camera rather than a vision camera by scanning the target to obtain pupil images at different locations along a first axis. The pupil images may comprise a first order diffraction pattern for each location. A measurement of signal intensity in the first order diffraction pattern is then obtained for each location. The variation of signal intensity with location along each axis is then analyzed to calculate the location of a feature in the target.

Abstract: A device and method for expediting spectral measurement in metrological activities during semiconductor device fabrication through interferometric spectroscopy of white light illumination during calibration, overlay, and recipe creation.

Abstract: A method of overlay control in silicon wafer manufacturing comprises firstly locating a target comprising a diffraction grating on a wafer layer; and then measuring the alignment of patterns in successive layers of the wafer. The location of the target may be done by the pupil camera rather than a vision camera by scanning the target to obtain pupil images at different locations along a first axis. The pupil images may comprise a first order diffraction pattern for each location. A measurement of signal intensity in the first order diffraction pattern is then obtained for each location. The variation of signal intensity with location along each axis is then analyzed to calculate the location of a feature in the target.