Patents by Inventor Vincent Ip

Vincent Ip has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240093356
    Abstract: Methods for forming thin, low resistivity metal layers, such as tungsten (W) and ruthenium (Ru) layers. The methods include depositing a metal material onto a substrate via ion beam deposition with assist in a process chamber at a temperature of at least 250° C. to produce the metal film. A resulting thin tungsten film has large and highly oriented ?(110) grains having a resistivity less than 10 ??-cm and thickness less than 300 ?, with no discernable ?-phase. A resulting thin ruthenium film has a resistivity less than 12 ??-cm and a thickness less than 300 ?.
    Type: Application
    Filed: November 28, 2023
    Publication date: March 21, 2024
    Inventors: Narasimhan SRINIVASAN, Tania HENRY, Frank CERIO, Paul TURNER, Vincent IP, Rutvik MEHTA
  • Patent number: 11688030
    Abstract: Vision systems for robotic assemblies for handling cargo, for example, unloading cargo from a trailer, can determine the position of cargo based on shading topography. Shading topography imaging can be performed by using light sources arranged at different positions relative to the image capture device(s).
    Type: Grant
    Filed: June 11, 2020
    Date of Patent: June 27, 2023
    Assignees: Frito-Lay North America, Inc., Graftek Imaging Inc.
    Inventors: Romik Chatterjee, Thomas M. Sterritt, Evan N. Sanford, Clark A. Turpin, Robert Eastlund, Christopher Koci, Nicholas Conrad, Vincent Ip, Sih Ying Wu
  • Publication number: 20210404051
    Abstract: Methods for forming thin, low resistivity metal layers, such as tungsten (W) and ruthenium (Ru) layers. The methods include depositing a metal material onto a substrate via ion beam deposition with assist in a process chamber at a temperature of at least 250° C. to produce the metal film. A resulting thin tungsten film has large and highly oriented ?(110) grains having a resistivity less than 9 ??-cm and thickness less than 300 ?, with no discernable ?-phase. A resulting thin ruthenium film has a resistivity less than 10 ??-cm and a thickness less than 300 ?.
    Type: Application
    Filed: September 14, 2021
    Publication date: December 30, 2021
    Inventors: Narasimhan SRINIVASAN, Tania HENRY, Frank CERIO, Paul TURNER, Vincent IP, Rutvik MEHTA
  • Publication number: 20210292889
    Abstract: Methods for forming thin, low resistivity metal layers, such as tungsten (W) and ruthenium (Ru) layers. The methods include depositing a metal material onto a substrate via ion beam deposition with assist in a process chamber at a temperature of at least 250° C. to produce the metal film. A resulting thin tungsten film has large and highly oriented ?(110) grains having a resistivity less than 10 ??-cm and thickness less than 300 ?, with no discernable ?-phase. A resulting thin ruthenium film has a resistivity less than 12 ??-cm and a thickness less than 300 ?.
    Type: Application
    Filed: March 10, 2021
    Publication date: September 23, 2021
    Inventors: Narasimhan SRINIVASAN, Tania HENRY, Frank CERIO, Paul TURNER, Vincent IP, Rutvik MEHTA
  • Publication number: 20200394747
    Abstract: Vision systems for robotic assemblies for handling cargo, for example, unloading cargo from a trailer, can determine the position of cargo based on shading topography. Shading topography imaging can be performed by using light sources arranged at different positions relative to the image capture device(s).
    Type: Application
    Filed: June 11, 2020
    Publication date: December 17, 2020
    Inventors: Romik CHATTERJEE, Thomas M. STERRITT, Evan N. SANFORD, Clark A. TURPIN, Robert EASTLUND, Christopher KOCI, Nicholas CONRAD, Vincent IP, Sih Ying WU
  • Publication number: 20160230268
    Abstract: An ion etch assisted deposition apparatus deposits a thin film upon a substrate having a three dimensional feature, using an ion etching source and deposition source arranged at similar angles relative to the substrate and at an angle ? relative to each other. The angle ? is selected to be substantially equal the supplement of the angle ?? formed between the three dimensional feature on the substrate and the substrate surface. In this configuration the relative flux of energetic etch ions and deposition atoms is adjusted to prevent the growth of poor quality deposited material.
    Type: Application
    Filed: April 20, 2016
    Publication date: August 11, 2016
    Inventors: Boris L. Druz, Vincent Ip, Adrian Devasahayam
  • Patent number: 9347127
    Abstract: An ion etch assisted deposition apparatus deposits a thin film upon a substrate having a three dimensional feature, using an ion etching source and deposition source arranged at similar angles relative to the substrate and at an angle ? relative to each other. The angle ? is selected to be substantially equal the supplement of the angle ?? formed between the three dimensional feature on the substrate and the substrate surface. In this configuration the relative flux of energetic etch ions and deposition atoms is adjusted to prevent the growth of poor quality deposited material.
    Type: Grant
    Filed: July 16, 2012
    Date of Patent: May 24, 2016
    Assignee: Veeco Instruments, Inc.
    Inventors: Boris L. Druz, Vincent Ip, Adrian Devasahavam
  • Publication number: 20140014497
    Abstract: An ion etch assisted deposition apparatus deposits a thin film upon a substrate having a three dimensional feature, using an ion etching source and deposition source arranged at similar angles relative to the substrate and at an angle ? relative to each other. The angle ? is selected to be substantially equal the supplement of the angle ?? formed between the three dimensional feature on the substrate and the substrate surface. In this configuration the relative flux of energetic etch ions and deposition atoms is adjusted to prevent the growth of poor quality deposited material.
    Type: Application
    Filed: July 16, 2012
    Publication date: January 16, 2014
    Applicant: VEECO INSTRUMENTS, INC.
    Inventors: Boris L. Druz, Vincent Ip, Adrian Devasahayam
  • Publication number: 20070045102
    Abstract: An improved planetary sputter deposition method for sputter depositing an alloy on a substrate wherein the sputter deposited amount, or thickness, of a specific material of the alloy can be controlled so that different substrates can be provided with an alloy having a different composition, i.e. having different percentages of the same materials, thus, reducing the costs of stockpiling multiple alloy targets. The method generally includes providing a substrate and a plurality of targets with each of the plurality of targets being composed of one or more magnetic materials. The targets are sputtered, in sequence, to deposit each of the materials of the plurality of targets on the substrate to provide at least one laminate defining an alloy.
    Type: Application
    Filed: August 23, 2005
    Publication date: March 1, 2007
    Applicant: Veeco Instruments Inc.
    Inventors: Chih-Ling Lee, Adrian Devasahayam, Ming Mao, Chih-Ching Hu, Vincent Ip, Piero Sferlazzo
  • Publication number: 20020009194
    Abstract: The invention relates to a small-sized phone holder (10) to which a phone is attached by means of clamping surfaces (15) which press against the side surfaces of the phone. The said clamping surfaces are made of a soft rubber-like material having a large friction coefficient against the shell material of the phone. The phone is locked in the holder by pushing it lightly against locking surfaces (16) at the bottom (12) of the holder. The locking mechanism in the holder will then turn the clamping surfaces (15) closely against the side surfaces of the phone. The phone is released from the holder by pushing two release buttons (14) whereby the locking mechanism is forced to open and the clamping surfaces which locked the phone in the holder are detached from the side surfaces of the phone.
    Type: Application
    Filed: July 3, 2001
    Publication date: January 24, 2002
    Inventors: Kam Sing Chris Wong, Ka Lun Alan Wong, Pui Wah Vincent Ip, Mika Vanttinen
  • Patent number: 6337558
    Abstract: The invention relates to a charging device (10) for the batteries of a cellular telephone, whereby the same device can be used to charge batteries (15) with different external dimensions. The charging device (10) comprises width controllers (19a, 19b), the position of which controls the location and position of the actual battery guides (18a, 18b), which enable batteries of different sizes to get a reliable contact with the electrical connectors (17) of the charging device. Short batteries are locked to the charging device by means of a separate stopper (14).
    Type: Grant
    Filed: February 14, 2001
    Date of Patent: January 8, 2002
    Assignee: Nokia Mobile Phones Ltd.
    Inventors: Kwok Yin Yuen, Pui Wah Vincent Ip, Andy Wong, Kim Murmann