Abstract: A method and system for evaluating a lithographic pattern obtained using multiple-patterning lithographic processing are presented. In one aspect, the method includes aligning a target design with a lithographic pattern. The target design may comprise a first design and a second design. The method further comprises identifying in the lithographic pattern a stitching region based on a region of overlap between the first design and the second design. The method further comprises determining for the identified stitching region whether a predetermined criterion is fulfilled. In some embodiments, determining whether a predetermined criterion is fulfilled may comprise determining a line or trench minimum width. Alternately or additionally, determining whether a predetermined criterion is fulfilled may comprise determining a stitching metric for the identified stitching region, and evaluating whether or not the stitching metric fulfills the predetermined criterion.

Abstract: A method and system for setting up multiple patterning lithographic processing of a pattern in a single layer is disclosed. The multiple patterning lithographic processing comprises a first and second patterning step. In one aspect, a method includes, for at least one process condition, obtaining values for a metric expressing a splitting correlated process quality as function of design parameters of a pattern and/or split parameters for the multiple patterning lithographic processing. The method also includes evaluating the values of the metric and selecting based thereon design and split parameters considering the process condition. The method may further include deriving design and/or split guidelines for splitting patterns to be processed using multiple patterning lithographic processing based on the evaluation.