Abstract: A signal modulation device comprises a delta-sigma modulator disposed for transforming an amplitude-modulation signal in baseband into a pulse signal. It also comprises a phase modulator receiving, at its input, analogue phase-modulation signals in baseband. The pulse signal is mixed with carrier signals upstream of the phase modulator. The modulation device is designed to form an input stage of a transmitter.

Abstract: The invention concerns a method comprising: 1) a first phase including steps which consist in forming in the upper part of a first initial semiconductor substrate a first layer of insulating material above a sectional plane of said first substrate, contacting the first layer of insulating material with the insulating upper part of a second initial substrate, so as to form a single layer of insulating material, a break at the sectional plane, so as to obtain an intermediate semiconductor substrate on the single insulating material layer; then, 2) in a second phase which consists in forming in the intermediate semiconductor substrate an additional insulating material layer adjacent to the single insulating material and topped with an upper layer of a final semiconductor substrate.

Abstract: The invention concerns a method comprising: 1) a first phase including steps which consist in forming in the upper part of a first initial semiconductor substrate a first layer of insulating material above a sectional plane of said first substrate, contacting the first layer of insulating material with the insulating upper part of a second initial substrate, so as to form a single layer of insulating material, a break at the sectional plane, so as to obtain an intermediate semiconductor substrate on the single insulating material layer; then, 2) in a second phase which consists in forming in the intermediate semiconductor substrate an additional insulating material layer adjacent to the single insulating material and topped with an upper layer of a final semiconductor substrate.

Abstract: A method of fabricating, from a first semiconductor substrate having two parallel main surfaces, a system including an islet of a semiconductor material surrounded by an insulative material and resting on another insulative material includes forming a layer of a first insulative material, and forming on the top main surface of the first semiconductor substrate a thin semiconductor layer forming the islet of semiconductor material. The thin semiconductor layer can be selectively etched relative to the first semiconductor substrate. A layer of a second insulative material is formed on exposed surfaces of the islet of semiconductor material and the thin semiconductor layer. The method further includes removing the first semiconductor substrate.

Abstract: A method of fabricating, from a first semiconductor substrate having two parallel main surfaces, a system including an islet of a semiconductor material surrounded by an insulative material and resting on another insulative material includes forming a layer of a first insulative material, and forming on the top main surface of the first semiconductor substrate a thin semiconductor layer forming the islet of semiconductor material. The thin semiconductor layer can be selectively etched relative to the first semiconductor substrate. A layer of a second insulative material is formed on exposed surfaces of the islet of semiconductor material and the thin semiconductor layer. The method further includes removing the first semiconductor substrate.

Abstract: The invention relates to a process and to an apparatus for treating semiconductor devices. A hydrogen plasma is created in the vicinity of the semiconductor devices and the positively polarized plasma particles are removed therefrom. A tightly sealed enclosure is provided and contains two plane, parallel electrodes polarized so as to form an anode and a cathode. Heating means are located in the vicinity of the anode.

Abstract: The method consists in fabricating an MOS transistor comprising a drain region and a source region separated from each other by a bulk region of opposite doping type relative to the first two regions, in delivering the radiation to be detected into the carrier-collection region of the MOS transistor, in leaving the bulk region at a floating potential and in collecting the drain-source current of the transistor.

Abstract: In a method and a device for storing analog signals in integrated circuit elements, the memory elements are constituted by field-effect transistors having a number of layers of different dielectrics between the gate and the doped semiconductor substrate of the transistor. After discrete sampling of the analog signal has been performed at N points, the N amplitudes corresponding to the N points are stored in N transistors in the form of a threshold voltage.

Abstract: In a method and a device for storing analog signals in integrated circuit elements, the memory elements are constituted by field-effect transistors having a number of layers of different dielectrics between the gate and the doped semiconductor substrate of the transistor. After discrete sampling of the analog signal has been performed at N points, the N amplitudes corresponding to the N points are stored in N transistors in the form of a threshold voltage.

Abstract: In a method and a device for multiplying analog signals in integrated circuit elements, the memory elements are constituted by field-effect transistors having a number of layers of different dielectrics between the gate and the doped semiconductor substrate of the transistor. After discrete sampling of the analog signal has been performed at N points, the N amplitudes corresponding to the N points are stored in N transistors in the form of a threshold voltage. A multiplication of two corresponding terms is performed by recording the signal which is proportional to one sample of a function in the memory of the multiple dielectric layer type and by applying a given voltage to the gate of the transistor so as to generate a signal which is a linear function of the threshold voltage which is in turn a linear function of the writing signal at the input of a multiplier circuit.