Patents by Inventor Vincent M. Donnelly, Jr.

Vincent M. Donnelly, Jr. has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Device having a high dielectric constant material and a method of manufacture thereof
    Patent number: 6511872
    Abstract: The present invention provides a method of manufacturing a semiconductor device. The method includes depositing a metal oxide containing a dopant and having a high dielectric constant on a substrate; wherein the metal is aluminum or silicon and the dopant is zirconium or hafnium and etching the doped metal oxide with a plasma containing a halogenated compound.
    Type: Grant
    Filed: July 10, 2001
    Date of Patent: January 28, 2003
    Assignee: Agere Systems Inc.
    Inventors: Vincent M. Donnelly, Jr., Avinoam Kornblit, Kalman Pelhos
  • Device processing involving an optical interferometric thermometry
    Patent number: 5467732
    Abstract: A method for fabricating a semiconductor device, which involves a technique for monitoring the temperature of the semiconductor substrate in which the device is formed, is disclosed. In accordance with the inventive technique, light, to which the substrate is substantially transparent, is impinged upon the substrate, and the intensity of either the reflected or transmitted light is monitored. If, for example, the intensity of the reflected light is monitored, then this intensity will be due to an interference between the light reflected from the upper surface of the semiconductor substrate and the light transmitted through the substrate and reflected upwardly from the lower surface of the substrate. If the temperature of the substrate varies, then the optical path length of the light within the substrate will vary, resulting in a change in the detected intensity.
    Type: Grant
    Filed: May 21, 1993
    Date of Patent: November 21, 1995
    Assignee: AT&T Corp.
    Inventors: Vincent M. Donnelly, Jr., James A. McCaulley
  • Device processing involving an optical interferometric thermometry using the change in refractive index to measure semiconductor wafer temperature
    Patent number: 5229303
    Abstract: A method for fabricating a semiconductor device, which involves a technique for monitoring the temperature of the semiconductor substrate in which the device is formed, is disclosed. In accordance with the inventive technique, light, to which the substrate is substantially transparent, is impinged upon the substrate, and the intensity of either the reflected or transmitted light is monitored. If, for example, the intensity of the reflected light is monitored, then this intensity will be due to an interference between the light reflected from the upper surface of the semiconductor substrate and the light transmitted through the substrate and reflected upwardly from the lower surface of the substrate. If the temperature of the substrate varies, then the optical path length of the light within the substrate will vary, resulting in a change in the detected intensity.
    Type: Grant
    Filed: December 13, 1991
    Date of Patent: July 20, 1993
    Assignee: AT&T Bell Laboratories
    Inventors: Vincent M. Donnelly, Jr., James A. McCaulley