Abstract: The invention relates to a process for fabricating a 3D-NAND flash memory comprising a first step of electrodepositing an alloy of copper and of a dopant metal selected from manganese and zinc followed by a second step of annealing the alloy to form a first layer of copper and a second layer comprising zinc or manganese, by demixing the alloy.

Abstract: The present invention relates to a process for the fabrication of cobalt interconnections and to an electrolyte which enables the implementation thereof. The electrolyte which has a pH below 4.0 comprises cobalt ions, chloride ions and at most two organic additives of low molecular weight. One of these additives may be an alpha-hydroxy carboxylic acid or a compound having a pKa value ranging from 1.8 to 3.5.

Abstract: Electrodeposition of a cobalt or copper alloy, and use in microelectronics The present invention relates to a process for fabricating cobalt or copper interconnects, and to an electrolyte enabling implementation of said process. The electrolyte, with a pH of less than 4.0, comprises cobalt or copper ions, chloride ions, manganese or zinc ions, and at most two organic additives of low molecular mass. One of these additives may be an alpha-hydroxy carboxylic acid.

Abstract: The present invention relates to a process for the fabrication of cobalt interconnections and to an electrolyte which enables the implementation thereof. The electrolyte which has a pH below 4.0 comprises cobalt ions, chloride ions and at most two organic additives of low molecular weight. One of these additives may be an alpha-hydroxy carboxylic acid or a compound having a pKa value ranging from 1.8 to 3.5.

Abstract: The present invention relates to an electrolyte composition for depositing copper on a conductive surface. The composition contains a combination of 2,2?-bipyridine, imidazole, tetra-ethyl-ammonium, and a complexing agent for copper. This electrolyte makes it possible to manufacture small size copper interconnects without any void and with a filling speed that is compatible with industrial constrain. The invention also concerns a process for filling cavities with copper, and a semiconductor device that is obtained according to this process.

Abstract: The subject of the present invention is an electrolyte composition for depositing copper on semiconductor substrates covered with a barrier layer. This electrolyte contains the combination of imidazole and 2,2?-bipyridine, used as suppressor, and of thiodiglycolic acid, used as accelerator. The combination of these additives makes it possible to obtain a bottom-up filling on trenches of very small width, typically of less than 100 nm.

Abstract: The present invention relates to an electrolyte composition for depositing copper on a conductive surface. The composition contains a combination of 2,2?-bipyridine, imidazole, tetra-ethyl-ammonium, and a complexing agent for copper. This electrolyte makes it possible to manufacture small size copper interconnects without any void and with a filling speed that is compatible with industrial constrain. The invention also concerns a process for filling cavities with copper, and a semiconductor device that is obtained according to this process.

Abstract: This invention relates to a method for preparing an organic film at the surface of a solid support, with a step of contacting said surface with a liquid solution including (i) at least one protic solvent, (ii) at least one adhesion primer, and (iii) at least one monomer different from the adhesion primer and radically polymerisable, under non-electrochemical conditions, and allowing the formation of radical entities based on the adhesion primer. This invention also relates to a non-electrically-conductive solid support on which an organic film according to said method is grafted, and a kit for preparing an essentially polymeric organic film at the surface of a solid support.

Abstract: This invention relates to a method for preparing an organic film at the surface of a solid support, with a step of contacting the surface with a liquid solution including (i) at least one protic solvent, (ii) at least one adhesion primer, and (iii) at least one monomer different from the adhesion primer and radically polymerisable, under non-electrochemical conditions, and allowing the formation of radical entities based on the adhesion primer. This invention also relates to a non-electrically-conductive solid support on which an organic film is grafted, and a kit for preparing an essentially polymeric organic film at the surface of a solid support.

Abstract: This invention relates to a method for preparing an organic film at the surface of a solid support, with a step of contacting said surface with a liquid solution including (i) at least one solvent, (ii) at least one adhesion primer, under non-electrochemical conditions, and allowing the formation of radical entities based on the adhesion primer. The liquid solution can also include (iii) at least one monomer different from the adhesion primer and radically polymerizable. This invention also relates to a non-electrically-conductive solid support on which an organic film according to said method is grafted, and a kit for preparing an essentially polymeric organic film at the surface of a solid support.

Abstract: A subject matter of the invention is a process for the formation of nickel silicide or of cobalt silicide, comprising the stages consisting in: exposing the surface of the silicon-comprising substrate with an aqueous solution comprising from 0.1 mM to 10 mM of gold ions and from 0.6 M to 3.0 M of fluorine ions for a duration of between 5 seconds and 5 minutes, depositing by an electroless route, on the activated substrate, a layer essentially composed of nickel or of cobalt, applying a rapid thermal annealing at a temperature of between 300° C. and 750° C., so as to form the nickel silicide or the cobalt silicide. The aqueous solution comprises a surface-active agent chosen from the compounds comprising at least one anionic or nonionic polar group and an alkyl chain comprising from 10 to 16 carbon atoms. This process essentially has applications in the manufacture of NAND memories and photovoltaic cells.

Abstract: The invention proposes a method for forming a vertical electrical connection (50) in a layered semiconductor structure (1), comprising the following steps: —providing (100) a layered semiconductor structure (1), said layered semiconductor structure (1) comprising: —a support substrate (20) including an first surface (22) and a second surface (24), —an insulating layer (30) overlying the first surface (22) of the support substrate (20), and —at least one device structure (40) formed in the insulating layer (30); and —drilling (300) a via (50) from the second surface of the support substrate (20) up to the device structure (40), in order to expose the device structure (40); characterized in that drilling (300) of the insulating layer is at least performed by wet etching (320).

Abstract: A subject matter of the invention is a process for the formation of nickel silicide or of cobalt silicide, comprising the stages consisting in: exposing the surface of the silicon-comprising substrate with an aqueous solution comprising from 0.1 mM to 10 mM of gold ions and from 0.6 M to 3.0 M of fluorine ions for a duration of between 5 seconds and 5 minutes, depositing by an electroless route, on the activated substrate, a layer essentially composed of nickel or of cobalt, applying a rapid thermal annealing at a temperature of between 300° C. and 750° C., so as to form the nickel silicide or the cobalt silicide. The aqueous solution comprises a surface-active agent chosen from the compounds comprising at least one anionic or nonionic polar group and an alkyl chain comprising from 10 to 16 carbon atoms. This process essentially has applications in the manufacture of NAND memories and photovoltaic cells.

Abstract: The present invention relates to a kit intended for the deposition of nickel or cobalt in the cavities of a semiconductor substrate intended to form through-silicon vias (TSV) for making interconnections in integrated circuits in three dimensions. The invention also relates to a method of metallization of the insulating surface of such a substrate which comprises contacting the surface with a liquid aqueous solution containing: at least one metal salt of nickel or cobalt; at least one reducing agent; at least one polymer bearing amine functions, and at least one agent stabilizing the metal ions. The step coverage of the layer of nickel or cobalt obtained can be greater than 80%, which facilitates subsequent filling of the vias with copper by electrodeposition.

Abstract: A solution and a process are used for activating the surface of a substrate comprising at least one area formed from a polymer, for the purpose of subsequently covering it with a metallic layer deposited via an electroless process. The composition contains: A) an activator formed from one or more palladium complexes; B) a binder formed from one or more organic compounds chosen from compounds comprising at least two glycidyl functions and at least two isocyanate functions; and C) a solvent system formed from one or more solvents capable of dissolving said activator and said binder. The solution and process may be applied for the manufacture of electronic devices such as integrated circuits, especially in three dimensions.

Abstract: The subject of the present invention is an electrolyte composition for depositing copper on semiconductor substrates covered with a barrier layer. This electrolyte contains the combination of imidazole and 2,2?-bipyridine, used as suppressor, and of thiodiglycolic acid, used as accelerator. The combination of these additives makes it possible to obtain a bottom-up filling on trenches of very small width, typically of less than 100 nm.

Abstract: The present invention relates to a solution and a method for activating the oxidized surface of a substrate, in particular of a semiconducting substrate, for its subsequent coating by a metal layer deposited by the electroless method. According to the invention, this composition contains: A) an activator consisting of one or more palladium complexes; B) a bifunctional organic binder consisting one or more organosilane complexes; C) a solvent system consisting one or more solvents for solubilizing the said activator and the said binder.

Abstract: This invention relates to a method for preparing an organic film at the surface of a solid support, with a step of contacting said surface with a liquid solution including (i) at least one protic solvent, (ii) at least one adhesion primer, under non-electrochemical conditions, and allowing the formation of radical entities based on the adhesion primer. The liquid solution can also include (iii) at least one monomer different from the adhesion primer and radically polymerizable. This invention also relates to a non-electrically-conductive solid support on which an organic film according to said method is grafted, and a kit for preparing an essentially polymeric organic film at the surface of a solid support.

Abstract: The invention proposes a method for forming a vertical electrical connection (50) in a layered semiconductor structure (1), comprising the following steps: —providing (100) a layered semiconductor structure (1), said layered semiconductor structure (1) comprising: —a support substrate (20) including an first surface (22) and a second surface (24), —an insulating layer (30) overlying the first surface (22) of the support substrate (20), and —at least one device structure (40) formed in the insulating layer (30); and —drilling (300) a via (50) from the second surface of the support substrate (20) up to the device structure (40), in order to expose the device structure (40); characterized in that drilling (300) of the insulating layer is at least performed by wet etching (320).

Abstract: The present invention relates to a kit intended for the deposition of nickel or cobalt in the cavities of a semiconductor substrate intended to form through-silicon vias (TSV) for making interconnections in integrated circuits in three dimensions. The invention also relates to a method of metallization of the insulating surface of such a substrate which comprises contacting the surface with a liquid aqueous solution containing: at least one metal salt of nickel or cobalt; at least one reducing agent; at least one polymer bearing amine functions, and at least one agent stabilizing the metal ions. The step coverage of the layer of nickel or cobalt obtained can be greater than 80%, which facilitates subsequent filling of the vias with copper by electrodeposition.