Patents by Inventor Vincent Ngo
Vincent Ngo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11862536Abstract: High power transistors, such as high power gallium nitride (GaN) transistors, are described. These high power transistors have larger total gate widths than conventional high power transistors by arranging multiple linear arrays of contacts in parallel. Thereby, the total gate width and the power rating of a high power transistor may be increased without elongating the die of the high power transistor. Accordingly, the die of the high power transistor may be mounted in a smaller circuit package relative to conventional dies with the same power rating.Type: GrantFiled: May 5, 2022Date of Patent: January 2, 2024Assignee: MACOM TECHNOLOGY SOLUTIONS HOLDINGS, INC.Inventors: Aram Mkhitarian, Vincent Ngo
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Publication number: 20220262709Abstract: High power transistors, such as high power gallium nitride (GaN) transistors, are described. These high power transistors have larger total gate widths than conventional high power transistors by arranging multiple linear arrays of contacts in parallel. Thereby, the total gate width and the power rating of a high power transistor may be increased without elongating the die of the high power transistor. Accordingly, the die of the high power transistor may be mounted in a smaller circuit package relative to conventional dies with the same power rating.Type: ApplicationFiled: May 5, 2022Publication date: August 18, 2022Inventors: Aram Mkhitarian, Vincent Ngo
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Patent number: 11367674Abstract: High power transistors, such as high power gallium nitride (GaN) transistors, are described. These high power transistors have larger total gate widths than conventional high power transistors by arranging multiple linear arrays of gate, drain, and source contacts in parallel. Thereby, the total gate width and the power rating of the high power transistor may be increased without elongating the die of the high power transistor. Accordingly, the die of the high power transistor may be mounted in a smaller circuit package relative to conventional dies with the same power rating.Type: GrantFiled: October 19, 2018Date of Patent: June 21, 2022Assignee: MACOM TECHNOLOGY SOLUTIONS HOLDINGS, INC.Inventors: Aram Mkhitarian, Vincent Ngo
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Patent number: 11244375Abstract: Gift givers typically find the process of selecting a personalized gift for a gift recipient to be time consuming with a low likelihood that the selected gift will be positively received by the recipient. The present disclosure describes analyzing a gift recipient's transaction history using machine learning techniques. Based on the analysis, one or more gift recommendations are provided to the gift giver. The one or more gift recommendations may comprise links to purchase products associated with the one or more gift recommendations. Additionally or alternatively, the one or more gift recommendations may comprise information about where the product may be purchased. This may improve the overall accuracy of the gift giving process, while reducing the stress surrounding gift giving. Additionally, the commercial opportunities of businesses may be expanded by partnering with sites that host the analysis.Type: GrantFiled: June 12, 2020Date of Patent: February 8, 2022Assignee: Capital One Services, LLCInventors: Lukiih Cuan, Dakyung Song, Vincent Ngo
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Publication number: 20210390604Abstract: Gift givers typically find the process of selecting a personalized gift for a gift recipient to be time consuming with a low likelihood that the selected gift will be positively received by the recipient. The present disclosure describes analyzing a gift recipient's transaction history using machine learning techniques. Based on the analysis, one or more gift recommendations are provided to the gift giver. The one or more gift recommendations may comprise links to purchase products associated with the one or more gift recommendations. Additionally or alternatively, the one or more gift recommendations may comprise information about where the product may be purchased. This may improve the overall accuracy of the gift giving process, while reducing the stress surrounding gift giving. Additionally, the commercial opportunities of businesses may be expanded by partnering with sites that host the analysis.Type: ApplicationFiled: June 12, 2020Publication date: December 16, 2021Inventors: Lukiih Cuan, Dakyung Song, Vincent Ngo
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Publication number: 20190314607Abstract: A catheter system includes a head including ports, a tail including conduits, and a medical balloon located between the head and the tail. Each conduit is connected to one of the ports. The medical balloon comprises ridges located around a circumference of the medical balloon. One or more sensors are located in the conduits. The catheter system can be used for ablation of the left atrial appendage using an ablation agent. The catheter system is capable of sealing the left atrial appendage, administering the ablation agent, delivering rinsing fluid into the sealed cavity, and extracting liquid from the sealed cavity.Type: ApplicationFiled: April 11, 2019Publication date: October 17, 2019Inventors: Mehdi Razavi, Mathews John, Anand Ganapathy, Manuel Andres Gutierrez, Vincent Ngo, Loren Chane Sladek, Brian Greet, David Burkland
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Publication number: 20190214330Abstract: High power transistors, such as high power gallium nitride (GaN) transistors, are described. These high power transistors have larger total gate widths than conventional high power transistors by arranging multiple linear arrays of gate, drain, and source contacts in parallel. Thereby, the total gate width and the power rating of the high power transistor may be increased without elongating the die of the high power transistor. Accordingly, the die of the high power transistor may be mounted in a smaller circuit package relative to conventional dies with the same power rating.Type: ApplicationFiled: October 19, 2018Publication date: July 11, 2019Applicant: MACOM Technology Solutions Holdings, Inc.Inventors: Aram Mkhitarian, Vincent Ngo
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Patent number: 10134658Abstract: High power transistors, such as high power gallium nitride (GaN) transistors, are described. These high power transistors have larger total gate widths than conventional high power transistors by arranging multiple linear arrays of gate, drain, and source contacts in parallel. Thereby, the total gate width and the power rating of the high power transistor may be increased without elongating the die of the high power transistor. Accordingly, the die of the high power transistor may be mounted in a smaller circuit package relative to conventional dies with the same power rating.Type: GrantFiled: August 10, 2016Date of Patent: November 20, 2018Assignee: MACOM Technology Solutions Holdings, Inc.Inventors: Aram Mkhitarian, Vincent Ngo
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Publication number: 20180047656Abstract: High power transistors, such as high power gallium nitride (GaN) transistors, are described. These high power transistors have larger total gate widths than conventional high power transistors by arranging multiple linear arrays of gate, drain, and source contacts in parallel. Thereby, the total gate width and the power rating of the high power transistor may be increased without elongating the die of the high power transistor. Accordingly, the die of the high power transistor may be mounted in a smaller circuit package relative to conventional dies with the same power rating.Type: ApplicationFiled: August 10, 2016Publication date: February 15, 2018Applicant: MACOM Technology Solutions Holdings, Inc.Inventors: Aram Mkhitarian, Vincent Ngo
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Patent number: 8812302Abstract: A computer-implemented method for assisting a user to input Vietnamese text to a user device lacking a subset of characters in a Vietnamese alphabet includes receiving a character input by a user, determining three words previously input by the user, the three words having already had diacritical marks inserted, transmitting the three words and the character to a server via a network, receiving first and second information corresponding to the character from the server via the network, the first and second information generated at the server based on a context of the three words, the context determined at the server using a language model, the first and second information indicating whether the character requires a diacritical mark and a specific diacritical mark, respectively, generating a modified character comprising a character in the Vietnamese alphabet based on the character and the first and second information, and displaying the modified character.Type: GrantFiled: August 2, 2012Date of Patent: August 19, 2014Assignee: Google Inc.Inventors: Xiangye Xiao, Yuanbo Zhang, Vincent Ngo Bao Khoi, Fan Yang, Baohua Liao, Hanping Feng
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Publication number: 20130185054Abstract: A computer-implemented method for assisting a user to input Vietnamese text to a user device lacking a subset of characters in a Vietnamese alphabet includes receiving a character input by a user, determining three words previously input by the user, the three words having already had diacritical marks inserted, transmitting the three words and the character to a server via a network, receiving first and second information corresponding to the character from the server via the network, the first and second information generated at the server based on a context of the three words, the context determined at the server using a language model, the first and second information indicating whether the character requires a diacritical mark and a specific diacritical mark, respectively, generating a modified character comprising a character in the Vietnamese alphabet based on the character and the first and second information, and displaying the modified character.Type: ApplicationFiled: August 2, 2012Publication date: July 18, 2013Applicant: Google Inc.Inventors: Xiangye Xiao, Yuanbo Zhang, Vincent Ngo Bao Khoi, Fan Yang, Baohua Liao, Hanping Feng