Patents by Inventor Vincent Ngo

Vincent Ngo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11862536
    Abstract: High power transistors, such as high power gallium nitride (GaN) transistors, are described. These high power transistors have larger total gate widths than conventional high power transistors by arranging multiple linear arrays of contacts in parallel. Thereby, the total gate width and the power rating of a high power transistor may be increased without elongating the die of the high power transistor. Accordingly, the die of the high power transistor may be mounted in a smaller circuit package relative to conventional dies with the same power rating.
    Type: Grant
    Filed: May 5, 2022
    Date of Patent: January 2, 2024
    Assignee: MACOM TECHNOLOGY SOLUTIONS HOLDINGS, INC.
    Inventors: Aram Mkhitarian, Vincent Ngo
  • Publication number: 20220262709
    Abstract: High power transistors, such as high power gallium nitride (GaN) transistors, are described. These high power transistors have larger total gate widths than conventional high power transistors by arranging multiple linear arrays of contacts in parallel. Thereby, the total gate width and the power rating of a high power transistor may be increased without elongating the die of the high power transistor. Accordingly, the die of the high power transistor may be mounted in a smaller circuit package relative to conventional dies with the same power rating.
    Type: Application
    Filed: May 5, 2022
    Publication date: August 18, 2022
    Inventors: Aram Mkhitarian, Vincent Ngo
  • Patent number: 11367674
    Abstract: High power transistors, such as high power gallium nitride (GaN) transistors, are described. These high power transistors have larger total gate widths than conventional high power transistors by arranging multiple linear arrays of gate, drain, and source contacts in parallel. Thereby, the total gate width and the power rating of the high power transistor may be increased without elongating the die of the high power transistor. Accordingly, the die of the high power transistor may be mounted in a smaller circuit package relative to conventional dies with the same power rating.
    Type: Grant
    Filed: October 19, 2018
    Date of Patent: June 21, 2022
    Assignee: MACOM TECHNOLOGY SOLUTIONS HOLDINGS, INC.
    Inventors: Aram Mkhitarian, Vincent Ngo
  • Patent number: 11244375
    Abstract: Gift givers typically find the process of selecting a personalized gift for a gift recipient to be time consuming with a low likelihood that the selected gift will be positively received by the recipient. The present disclosure describes analyzing a gift recipient's transaction history using machine learning techniques. Based on the analysis, one or more gift recommendations are provided to the gift giver. The one or more gift recommendations may comprise links to purchase products associated with the one or more gift recommendations. Additionally or alternatively, the one or more gift recommendations may comprise information about where the product may be purchased. This may improve the overall accuracy of the gift giving process, while reducing the stress surrounding gift giving. Additionally, the commercial opportunities of businesses may be expanded by partnering with sites that host the analysis.
    Type: Grant
    Filed: June 12, 2020
    Date of Patent: February 8, 2022
    Assignee: Capital One Services, LLC
    Inventors: Lukiih Cuan, Dakyung Song, Vincent Ngo
  • Publication number: 20210390604
    Abstract: Gift givers typically find the process of selecting a personalized gift for a gift recipient to be time consuming with a low likelihood that the selected gift will be positively received by the recipient. The present disclosure describes analyzing a gift recipient's transaction history using machine learning techniques. Based on the analysis, one or more gift recommendations are provided to the gift giver. The one or more gift recommendations may comprise links to purchase products associated with the one or more gift recommendations. Additionally or alternatively, the one or more gift recommendations may comprise information about where the product may be purchased. This may improve the overall accuracy of the gift giving process, while reducing the stress surrounding gift giving. Additionally, the commercial opportunities of businesses may be expanded by partnering with sites that host the analysis.
    Type: Application
    Filed: June 12, 2020
    Publication date: December 16, 2021
    Inventors: Lukiih Cuan, Dakyung Song, Vincent Ngo
  • Publication number: 20190314607
    Abstract: A catheter system includes a head including ports, a tail including conduits, and a medical balloon located between the head and the tail. Each conduit is connected to one of the ports. The medical balloon comprises ridges located around a circumference of the medical balloon. One or more sensors are located in the conduits. The catheter system can be used for ablation of the left atrial appendage using an ablation agent. The catheter system is capable of sealing the left atrial appendage, administering the ablation agent, delivering rinsing fluid into the sealed cavity, and extracting liquid from the sealed cavity.
    Type: Application
    Filed: April 11, 2019
    Publication date: October 17, 2019
    Inventors: Mehdi Razavi, Mathews John, Anand Ganapathy, Manuel Andres Gutierrez, Vincent Ngo, Loren Chane Sladek, Brian Greet, David Burkland
  • Publication number: 20190214330
    Abstract: High power transistors, such as high power gallium nitride (GaN) transistors, are described. These high power transistors have larger total gate widths than conventional high power transistors by arranging multiple linear arrays of gate, drain, and source contacts in parallel. Thereby, the total gate width and the power rating of the high power transistor may be increased without elongating the die of the high power transistor. Accordingly, the die of the high power transistor may be mounted in a smaller circuit package relative to conventional dies with the same power rating.
    Type: Application
    Filed: October 19, 2018
    Publication date: July 11, 2019
    Applicant: MACOM Technology Solutions Holdings, Inc.
    Inventors: Aram Mkhitarian, Vincent Ngo
  • Patent number: 10134658
    Abstract: High power transistors, such as high power gallium nitride (GaN) transistors, are described. These high power transistors have larger total gate widths than conventional high power transistors by arranging multiple linear arrays of gate, drain, and source contacts in parallel. Thereby, the total gate width and the power rating of the high power transistor may be increased without elongating the die of the high power transistor. Accordingly, the die of the high power transistor may be mounted in a smaller circuit package relative to conventional dies with the same power rating.
    Type: Grant
    Filed: August 10, 2016
    Date of Patent: November 20, 2018
    Assignee: MACOM Technology Solutions Holdings, Inc.
    Inventors: Aram Mkhitarian, Vincent Ngo
  • Publication number: 20180047656
    Abstract: High power transistors, such as high power gallium nitride (GaN) transistors, are described. These high power transistors have larger total gate widths than conventional high power transistors by arranging multiple linear arrays of gate, drain, and source contacts in parallel. Thereby, the total gate width and the power rating of the high power transistor may be increased without elongating the die of the high power transistor. Accordingly, the die of the high power transistor may be mounted in a smaller circuit package relative to conventional dies with the same power rating.
    Type: Application
    Filed: August 10, 2016
    Publication date: February 15, 2018
    Applicant: MACOM Technology Solutions Holdings, Inc.
    Inventors: Aram Mkhitarian, Vincent Ngo
  • Patent number: 8812302
    Abstract: A computer-implemented method for assisting a user to input Vietnamese text to a user device lacking a subset of characters in a Vietnamese alphabet includes receiving a character input by a user, determining three words previously input by the user, the three words having already had diacritical marks inserted, transmitting the three words and the character to a server via a network, receiving first and second information corresponding to the character from the server via the network, the first and second information generated at the server based on a context of the three words, the context determined at the server using a language model, the first and second information indicating whether the character requires a diacritical mark and a specific diacritical mark, respectively, generating a modified character comprising a character in the Vietnamese alphabet based on the character and the first and second information, and displaying the modified character.
    Type: Grant
    Filed: August 2, 2012
    Date of Patent: August 19, 2014
    Assignee: Google Inc.
    Inventors: Xiangye Xiao, Yuanbo Zhang, Vincent Ngo Bao Khoi, Fan Yang, Baohua Liao, Hanping Feng
  • Publication number: 20130185054
    Abstract: A computer-implemented method for assisting a user to input Vietnamese text to a user device lacking a subset of characters in a Vietnamese alphabet includes receiving a character input by a user, determining three words previously input by the user, the three words having already had diacritical marks inserted, transmitting the three words and the character to a server via a network, receiving first and second information corresponding to the character from the server via the network, the first and second information generated at the server based on a context of the three words, the context determined at the server using a language model, the first and second information indicating whether the character requires a diacritical mark and a specific diacritical mark, respectively, generating a modified character comprising a character in the Vietnamese alphabet based on the character and the first and second information, and displaying the modified character.
    Type: Application
    Filed: August 2, 2012
    Publication date: July 18, 2013
    Applicant: Google Inc.
    Inventors: Xiangye Xiao, Yuanbo Zhang, Vincent Ngo Bao Khoi, Fan Yang, Baohua Liao, Hanping Feng