Patents by Inventor Vincent Omarjee

Vincent Omarjee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • INTERNALLY COATED VESSEL FOR HOUSING A METAL HALIDE
    Publication number: 20160046408
    Abstract: Provided is a vessel having internally wettable surfaces therein coated with one or more barrier layers to, for example, inhibit contamination of a material, such as a metal halide, contained in the vessel.
    Type: Application
    Filed: October 27, 2015
    Publication date: February 18, 2016
    Inventors: Jean-Marc Girard, Glenn Kuchenbeiser, Nicolas Blasco, Vincent Omarjee, Venkateswara Pallem
  • Nitridation of atomic layer deposited high-k dielectrics using trisilylamine
    Patent number: 9064694
    Abstract: A method is provided for forming a nitrided high-k film in an atomic layer deposition process (ALD) process. The method includes receiving a substrate in a process chamber, maintaining the substrate at a temperature sufficient for ALD of a nitrided high-k film, and depositing the nitrided high-k film on the substrate by exposing the substrate to a gas pulse sequence that includes, in any order: a) exposing the substrate to a gas pulse comprising a metal-containing precursor, b) exposing the substrate to a gas pulse comprising an oxygen-containing gas, and c) exposing the substrate to a gas pulse comprising trisilylamine gas, where the exposing the substrate to the trisilylamine gas yields the nitrided high-k film that includes nitrogen and that is substantially free of silicon, and repeating the gas pulse sequence. A trisilylamine gas exposure may also be used to nitride a deposited high-k film.
    Type: Grant
    Filed: July 12, 2013
    Date of Patent: June 23, 2015
    Assignee: Tokyo Electron Limited
    Inventors: Steven P Consiglio, Robert D Clark, Christian Dussarrat, Vincent Omarjee, Venkat Pallem, Glenn Kuchenbeiser
  • NITRIDATION OF ATOMIC LAYER DEPOSITED HIGH-K DIELECTRICS USING TRISILYLAMINE
    Publication number: 20140017907
    Abstract: A method is provided for forming a nitrided high-k film in an atomic layer deposition process (ALD) process. The method includes receiving a substrate in a process chamber, maintaining the substrate at a temperature sufficient for ALD of a nitrided high-k film, and depositing the nitrided high-k film on the substrate by exposing the substrate to a gas pulse sequence that includes, in any order: a) exposing the substrate to a gas pulse comprising a metal-containing precursor, b) exposing the substrate to a gas pulse comprising an oxygen-containing gas, and c) exposing the substrate to a gas pulse comprising trisilylamine gas, where the exposing the substrate to the trisilylamine gas yields the nitrided high-k film that includes nitrogen and that is substantially free of silicon, and repeating the gas pulse sequence. A trisilylamine gas exposure may also be used to nitride a deposited high-k film.
    Type: Application
    Filed: July 12, 2013
    Publication date: January 16, 2014
    Inventors: Steven P. Consiglio, Robert D. Clark, Christian Dussarrat, Vincent Omarjee, Venkat Pallem, Glenn Kuchenbeiser