Patents by Inventor Vincent Pott

Vincent Pott has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Memory cell and method of manufacturing a memory cell
    Patent number: 9165932
    Abstract: A memory cell and a method of manufacturing a memory cell are provided. The memory cell includes a substrate; at least one first electrode disposed above the substrate; at least one second electrode disposed above the at least one first electrode; a moveable electrode disposed between the at least one first electrode and the at least one second electrode; wherein the moveable electrode is configured to move between the at least one first electrode and the at least one second electrode; wherein the moveable electrode comprises metal.
    Type: Grant
    Filed: June 25, 2012
    Date of Patent: October 20, 2015
    Assignee: Agency for Science, Technology and Research
    Inventors: Vincent Pott, Navab Singh
  • Electro-Mechanical Device Having a Piezoelectric Actuator
    Publication number: 20130020908
    Abstract: Embodiments provide an electro-mechanical device. The electro-mechanical device includes a piezoelectric actuator, a first contact electrode and a second contact electrode. The first and second contact electrodes are moveable between a configuration in which they are electrically connected together and a configuration in which they are electrically isolated from each other. The piezoelectric actuator has a deflection element controllable by a first control electrode and a second control electrode. The electro-mechanical device is configured such that a voltage of one polarity applied across the first and second control electrodes causes a deflection of the deflection element which urges the first and second contact electrodes together.
    Type: Application
    Filed: June 20, 2012
    Publication date: January 24, 2013
    Inventors: Vincent POTT, Ming Lin Julius Tsai
  • Memory Cell and Method of Manufacturing a Memory Cell
    Publication number: 20130020631
    Abstract: A memory cell and a method of manufacturing a memory cell are provided. The memory cell includes a substrate; at least one first electrode disposed above the substrate; at least one second electrode disposed above the at least one first electrode; a moveable electrode disposed between the at least one first electrode and the at least one second electrode; wherein the moveable electrode is configured to move between the at least one first electrode and the at least one second electrode; wherein the moveable electrode comprises metal.
    Type: Application
    Filed: June 25, 2012
    Publication date: January 24, 2013
    Inventors: Vincent Pott, Navab Singh
  • Capacitor-less memory and abrupt switch based on hysteresis characteristics in punch-through impact ionization mos transistor (PI-MOS)
    Publication number: 20090072279
    Abstract: The present invention exploits the impact ionization induced by drain voltage increase and the onset of a bipolar parasitic in an ?-gate field effect metal oxide insulator transistor (called PI-MOS), in order to obtain a memory effect and abrupt current switching.
    Type: Application
    Filed: August 29, 2008
    Publication date: March 19, 2009
    Applicant: ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE (EPFL)
    Inventors: Kirsten Moselund, Mihai Adrian Ionescu, Vincent Pott, Maher Kayal