Patents by Inventor Vincent W. Ku

Vincent W. Ku has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190174240
    Abstract: In embodiments of the invention, the invention comprises a light tip cable including a cartridge assembly affixed to a medial end of the cable, the cartridge assembly including an emitter housing where the emitter housing includes an opening at a medial end of the housing and a flange at a lateral end of the housing. In embodiments of the invention, the cartridge assembly includes a light emitting element in the housing extending to the opening, retention features covering at least a portion of the housing, including the flange, the retention features comprising a lateral face and a lobe and at least one load bearing strand extending from the cable to the emitter; and electrical connectors extending from the cable to the light emitting element.
    Type: Application
    Filed: February 11, 2019
    Publication date: June 6, 2019
    Inventors: Eric B. JOHNSON, Vincent W. Ku, Patricia Ho, Ryan Lane-Lutter, Daniel K. Hallock
  • Publication number: 20180177548
    Abstract: Helical push wire electrodes are provided. The electrodes may create a continuous helical lesion. One or more electrodes may wind around a support section and create a set of helixes having fixed ends and hitches. Pushing or pulling an end of the electrode transforms the electrodes between a delivery configuration and a deployed configuration such that the set of helixes expand or contract axially. Different portions of the electrodes may be surrounded by sleeves. The sleeves may regulate how the wires transform and provide insulation. Various insulation configurations of the electrodes may provide creations of discrete lesions, efficient energy delivery and reduced power consumption.
    Type: Application
    Filed: December 21, 2017
    Publication date: June 28, 2018
    Inventors: Vincent W. Ku, Andrew E. Wu
  • Patent number: 9888961
    Abstract: Helical push wire electrodes are provided. The electrodes may create a continuous helical lesion. One or more electrodes may wind around a support section and create a set of helixes having fixed ends and hitches. Pushing or pulling an end of the electrode transforms the electrodes between a delivery configuration and a deployed configuration such that the set of helixes expand or contract axially. Different portions of the electrodes may be surrounded by sleeves. The sleeves may regulate how the wires transform and provide insulation. Various insulation configurations of the electrodes may provide creations of discrete lesions, efficient energy delivery and reduced power consumption.
    Type: Grant
    Filed: October 8, 2015
    Date of Patent: February 13, 2018
    Assignee: Medtronic Ardian Luxembourg S.a.r.l.
    Inventors: Vincent W. Ku, Andrew E. Wu
  • Publication number: 20160151112
    Abstract: Helical push wire electrodes are provided. The electrodes may create a continuous helical lesion. One or more electrodes may wind around a support section and create a set of helixes having fixed ends and hitches. Pushing or pulling an end of the electrode transforms the electrodes between a delivery configuration and a deployed configuration such that the set of helixes expand or contract axially. Different portions of the electrodes may be surrounded by sleeves. The sleeves may regulate how the wires transform and provide insulation. Various insulation configurations of the electrodes may provide creations of discrete lesions, efficient energy delivery and reduced power consumption.
    Type: Application
    Filed: October 8, 2015
    Publication date: June 2, 2016
    Inventors: Vincent W. Ku, Andrew E. Wu
  • Patent number: 9179974
    Abstract: Helical push wire electrodes are provided. The electrodes may create a continuous helical lesion. One or more electrodes may wind around a support section and create a set of helixes having fixed ends and hitches. Pushing or pulling an end of the electrode transforms the electrodes between a delivery configuration and a deployed configuration such that the set of helixes expand or contract axially. Different portions of the electrodes may be surrounded by sleeves. The sleeves may regulate how the wires transform and provide insulation. Various insulation configurations of the electrodes may provide creations of discrete lesions, efficient energy delivery and reduced power consumption.
    Type: Grant
    Filed: April 25, 2013
    Date of Patent: November 10, 2015
    Assignee: Medtronic Ardian Luxembourg S.a.r.l.
    Inventors: Vincent W. Ku, Andrew E. Wu
  • Publication number: 20140276791
    Abstract: Treatment devices with electrode contact surfaces configured for enhancing uniformity of electrical energy distribution are provided. In one embodiment, a treatment device includes a tubular electrode having a wall, a contact surface defined by the wall, and cut shapes at least partially extending through the wall. The tubular electrode is configured to transmit electrical energy to a treatment site within a body lumen via the contact surface, and the individual cut shapes are configured to draw a portion of the electrical energy toward an interior region of the contact surface. A shaft having a distal end portion operably coupled to the tubular electrode can locate the tubular electrode at the treatment site.
    Type: Application
    Filed: March 13, 2014
    Publication date: September 18, 2014
    Applicant: Medtronic Ardian Luxembourg S.a.r.l.
    Inventors: Vincent W. Ku, Joan A. Simon, Andrew E. Wu, Mingfei Chen, Nancy P. Nguyen
  • Patent number: 8070879
    Abstract: In one embodiment, an apparatus for performing an atomic layer deposition (ALD) process is provided which includes a chamber body containing a substrate support, a lid assembly attached to the chamber body, a remote plasma system (RPS) in fluid communication with the reaction zone, a centralized expanding conduit extending through the lid assembly and expanding radially outwards, a first gas delivery sub-assembly configured to deliver a first process gas, and a second gas delivery sub-assembly configured to deliver a second process gas into the centralized expanding conduit. The first gas delivery sub-assembly contains an annular channel encircling and in fluid communication with the centralized expanding conduit, wherein the annular channel is adapted to deliver the first process gas through a plurality of passageways and nozzles and into the centralized expanding conduit. The second gas delivery sub-assembly contains a gas inlet in fluid communication to the centralized expanding conduit.
    Type: Grant
    Filed: August 20, 2009
    Date of Patent: December 6, 2011
    Assignee: Applied Materials, Inc.
    Inventors: Ling Chen, Vincent W. Ku, Mei Chang, Dien-Yeh Wu, Hua Chung
  • Patent number: 8062422
    Abstract: Embodiments described herein are directed to an apparatus for generating a precursor for a semiconductor processing system. In one embodiment, an apparatus for generating a precursor gas during a vapor deposition process is described. The apparatus includes a canister containing an interior volume between a lid and a bottom, a gaseous inlet and a gaseous outlet disposed on the lid, a plurality of silos coupled to the bottom and extending from a lower region to an upper region of the interior volume, and a tantalum precursor having a chlorine concentration of about 5 ppm or less contained within the lower region of the canister.
    Type: Grant
    Filed: February 13, 2009
    Date of Patent: November 22, 2011
    Assignee: Applied Materials, Inc.
    Inventors: Ling Chen, Vincent W. Ku, Hua Chung, Christophe Marcadal, Seshadri Ganguli, Jenny Lin, Dien-Yeh Wu, Alan Ouye, Mei Chang
  • Patent number: 7867896
    Abstract: Embodiments of the invention provide a method for forming tantalum nitride materials on a substrate by employing an atomic layer deposition (ALD) process. The method includes heating a tantalum precursor within an ampoule to a predetermined temperature to form a tantalum precursor gas and sequentially exposing a substrate to the tantalum precursor gas and a nitrogen precursor to form a tantalum nitride material. Thereafter, a nucleation layer and a bulk layer may be deposited on the substrate. In one example, a radical nitrogen compound may be formed from the nitrogen precursor during a plasma-enhanced ALD process. A nitrogen precursor may include nitrogen or ammonia. In another example, a metal-organic tantalum precursor may be used during the deposition process.
    Type: Grant
    Filed: April 2, 2009
    Date of Patent: January 11, 2011
    Assignee: Applied Materials, Inc.
    Inventors: Wei Cao, Hua Chung, Vincent W. Ku, Ling Chen
  • Patent number: 7678194
    Abstract: A method and apparatus for generating gas for a processing system is provided. In one embodiment, an apparatus for generating gas for a processing system includes a canister having at least one baffle disposed between two ports and containing a precursor material. The precursor material is adapted to produce a gas vapor when heated to a defined temperature at a defined pressure. The baffle forces a carrier gas to travel an extended mean path between the inlet and outlet ports. In another embodiment, an apparatus for generating gas includes a canister having a tube that directs a carrier gas flowing into the canister away from a precursor material disposed within the canister.
    Type: Grant
    Filed: November 28, 2006
    Date of Patent: March 16, 2010
    Assignee: Applied Materials, Inc.
    Inventors: Seshadri Ganguli, Ling Chen, Vincent W. Ku
  • Publication number: 20090308318
    Abstract: In one embodiment, an apparatus for performing an atomic layer deposition (ALD) process is provided which includes a chamber body containing a substrate support, a lid assembly attached to the chamber body, a remote plasma system (RPS) in fluid communication with the reaction zone, a centralized expanding conduit extending through the lid assembly and expanding radially outwards, a first gas delivery sub-assembly configured to deliver a first process gas, and a second gas delivery sub-assembly configured to deliver a second process gas into the centralized expanding conduit. The first gas delivery sub-assembly contains an annular channel encircling and in fluid communication with the centralized expanding conduit, wherein the annular channel is adapted to deliver the first process gas through a plurality of passageways and nozzles and into the centralized expanding conduit. The second gas delivery sub-assembly contains a gas inlet in fluid communication to the centralized expanding conduit.
    Type: Application
    Filed: August 20, 2009
    Publication date: December 17, 2009
    Inventors: Ling Chen, Vincent W. Ku, Mei Chang, Dien-Yeh Wu, Hua Chung
  • Patent number: 7597758
    Abstract: Embodiments of the invention provide chemical precursor ampoules that may be used during vapor deposition processes. In one embodiment, an apparatus for generating a chemical precursor gas used in a vapor deposition processing system is provided which includes a canister having a sidewall, a top, and a bottom forming an interior volume and a solid precursor material at least partially contained within a lower region of the interior volume. The apparatus further contains an inlet port and an outlet port in fluid communication with the interior volume and an inlet tube connected to the inlet port and positioned to direct a carrier gas towards the sidewall and away form the outlet port. In one example, the solid precursor contains pentakis(dimethylamido) tantalum (PDMAT). In another example, the apparatus contains a plurality of baffles that form an extended mean flow path between the inlet port and the outlet port.
    Type: Grant
    Filed: August 31, 2007
    Date of Patent: October 6, 2009
    Assignee: Applied Materials, Inc.
    Inventors: Ling Chen, Vincent W. Ku, Hua Chung, Christophe Marcadal, Seshadri Ganguli, Jenny Lin, Dien-Yeh Wu, Alan Ouye, Mei Chang
  • Patent number: 7591907
    Abstract: In one embodiment, an apparatus for performing an atomic layer deposition (ALD) process is provided which includes a chamber body containing a substrate support, a lid assembly attached to the chamber body, a remote plasma system (RPS) in fluid communication with the reaction zone, a centralized expanding conduit extending through the lid assembly and expanding radially outwards, a first gas delivery sub-assembly configured to deliver a first process gas, and a second gas delivery sub-assembly configured to deliver a second process gas into the centralized expanding conduit. The first gas delivery sub-assembly contains an annular channel encircling and in fluid communication with the centralized expanding conduit, wherein the annular channel is adapted to deliver the first process gas through a plurality of passageways and nozzles and into the centralized expanding conduit. The second gas delivery sub-assembly contains a gas inlet in fluid communication to the centralized expanding conduit.
    Type: Grant
    Filed: July 11, 2008
    Date of Patent: September 22, 2009
    Assignee: Applied Materials, Inc.
    Inventors: Ling Chen, Vincent W. Ku, Mei Chang, Dien-Yeh Wu, Hua Chung
  • Patent number: 7588736
    Abstract: Embodiments of an apparatus for generating a chemical precursor used in a vapor deposition processing system are provide which include a canister having a sidewall, a top, and a bottom forming an interior volume which is in fluid communication with an inlet port and an outlet port. The canister contains a plurality of baffles that extend from the bottom to an upper portion of the interior volume and form an extended mean flow path between the inlet port and the outlet port. In one embodiment, the baffles are contained on a prefabricated insert positioned on the bottom of the canister. In one example, an inlet tube may extend from the inlet port into the interior region and be positioned substantially parallel to the baffles. An outlet end of the inlet tube may be adapted to direct a gas flow away from the outlet port, such as towards the sidewall or top of the canister.
    Type: Grant
    Filed: May 16, 2006
    Date of Patent: September 15, 2009
    Assignee: Applied Materials, Inc.
    Inventors: Ling Chen, Vincent W. Ku, Hua Chung, Christophe Marcadal, Seshadri Ganguli, Jenny Lin, Dien-Yeh Wu, Alan Ouye, Mei Chang
  • Patent number: 7569191
    Abstract: Embodiments of the invention provide a method and an apparatus for generating a gaseous chemical precursor for a processing system. In one embodiment, an apparatus for generating the gaseous chemical precursor used in a vapor deposition processing system is provided and includes a canister having a sidewall, a top, and a bottom encompassing an interior volume therein, an inlet port and an outlet port in fluid communication with the interior volume, and an inlet tube extending from the inlet port into the canister, wherein the inlet tube contains an outlet positioned to direct a gas flow away from the outlet port and towards the sidewall of the canister.
    Type: Grant
    Filed: September 18, 2008
    Date of Patent: August 4, 2009
    Assignee: Applied Materials, Inc.
    Inventors: Seshadri Ganguli, Ling Chen, Vincent W. Ku
  • Publication number: 20090151633
    Abstract: Embodiments described herein are directed to an apparatus for generating a precursor for a semiconductor processing system. In one embodiment, an apparatus for generating a precursor gas during a vapor deposition process is described. The apparatus includes a canister containing an interior volume between a lid and a bottom, a gaseous inlet and a gaseous outlet disposed on the lid, a plurality of silos coupled to the bottom and extending from a lower region to an upper region of the interior volume, and a tantalum precursor having a chlorine concentration of about 5 ppm or less contained within the lower region of the canister.
    Type: Application
    Filed: February 13, 2009
    Publication date: June 18, 2009
    Inventors: Ling Chen, Vincent W. Ku, Hua Chung, Christophe Marcadal, Seshadri Ganguli, Jenny Lin, Dien-Yeh Wu, Alan Ouye, Mei Chang
  • Patent number: 7524374
    Abstract: Embodiments of the present invention are directed to an apparatus for generating a precursor for a semiconductor processing system (320). The apparatus includes a canister (300) having a sidewall (402), a top portion and a bottom portion. The canister (300) defines an interior volume (438) having an upper region (418) and a lower region (434). In one embodiment, the apparatus further includes a heater (430) partially surrounding the canister (300). The heater (430) creates a temperature gradient between the upper region (418) and the lower region (434). Also claimed is a method of forming a barrier layer from purified pentakis (dimethylamido) tantalum, for example a tantalum nitride barrier layer by atomic layer deposition.
    Type: Grant
    Filed: May 27, 2004
    Date of Patent: April 28, 2009
    Assignee: Applied Materials, Inc.
    Inventors: Ling Chen, Vincent W. Ku, Hua Chung, Christophe Marcadal, Seshadri Ganguli, Jenny Lin, Dien-Yeh Wu, Alan Ouye, Mei Chang
  • Publication number: 20090011129
    Abstract: Embodiments of the invention provide a method and an apparatus for generating a gaseous chemical precursor for a processing system. In one embodiment, an apparatus for generating the gaseous chemical precursor used in a vapor deposition processing system is provided and includes a canister having a sidewall, a top, and a bottom encompassing an interior volume therein, an inlet port and an outlet port in fluid communication with the interior volume, and an inlet tube extending from the inlet port into the canister, wherein the inlet tube contains an outlet positioned to direct a gas flow away from the outlet port and towards the sidewall of the canister.
    Type: Application
    Filed: September 18, 2008
    Publication date: January 8, 2009
    Inventors: Seshadri Ganguli, Ling Chen, Vincent W. Ku
  • Publication number: 20080274299
    Abstract: In one embodiment, an apparatus for performing an atomic layer deposition (ALD) process is provided which includes a chamber body containing a substrate support, a lid assembly attached to the chamber body, a remote plasma system (RPS) in fluid communication with the reaction zone, a centralized expanding conduit extending through the lid assembly and expanding radially outwards, a first gas delivery sub-assembly configured to deliver a first process gas, and a second gas delivery sub-assembly configured to deliver a second process gas into the centralized expanding conduit. The first gas delivery sub-assembly contains an annular channel encircling and in fluid communication with the centralized expanding conduit, wherein the annular channel is adapted to deliver the first process gas through a plurality of passageways and nozzles and into the centralized expanding conduit. The second gas delivery sub-assembly contains a gas inlet in fluid communication to the centralized expanding conduit.
    Type: Application
    Filed: July 11, 2008
    Publication date: November 6, 2008
    Inventors: LING CHEN, Vincent W. Ku, Mei Chang, Dien-Yeh Wu, Hua Chung
  • Patent number: 7429361
    Abstract: In one embodiment, an apparatus for generating a gaseous chemical precursor used in a vapor deposition processing system is provided which includes a canister comprising a sidewall, a top, and a bottom encompassing an interior volume therein, an inlet port and an outlet port in fluid communication with the interior volume, and an inlet tube extending from the inlet port into the canister. The apparatus further may contain a plurality of baffles within the interior volume extending between the top and the bottom of the canister, and a precursor slurry contained within the interior volume, wherein the precursor slurry contains a solid precursor material and a thermally conductive material that is unreactive towards the solid precursor material. In one example, the solid precursor material solid precursor material is pentakis(dimethylamino) tantalum.
    Type: Grant
    Filed: December 19, 2006
    Date of Patent: September 30, 2008
    Assignee: Applied Materials, Inc.
    Inventors: Seshadri Ganguli, Ling Chen, Vincent W. Ku