Patents by Inventor Vincente Munne

Vincente Munne has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHODS OF FORMING A P-TYPE GROUP II-VI SEMICONDUCTOR CRYSTAL LAYER ON A SUBSTRATE
    Publication number: 20070111372
    Abstract: A disclosed method deposits a p-type magnesium-, cadmium- and/or zinc-oxide-based II-VI Group compound semiconductor crystal layer on a zinc oxide (ZnO) substrate having a (002) crystallographic orientation. The method uses a zinc-containing reaction gas supplied to a surface of a heated substrate. The p-type magnesium-, cadmium- and/or zinc-oxide-based II-VI Group compound semiconductor crystal layer is grown on the heated substrate, while introducing a pressing gas in a transverse direction toward the substrate to press the reaction gas against the entire surface of the substrate.
    Type: Application
    Filed: December 28, 2006
    Publication date: May 17, 2007
    Applicant: CERMET, INC.
    Inventors: Jeffrey Nause, Joseph Maciejewski, Vincente Munne, Shanthi Ganesan
  • Method of forming a p-type group II-VI semiconductor crystal layer on a substrate
    Patent number: 7176054
    Abstract: A method of depositing a p-type magnesium-, cadmium- and/or zinc-oxide-based II-VI Group compound semiconductor crystal layer over a substrate by a metalorganic chemical vapor deposition technique. A reaction gas is supplied to a surface of a heated substrate in a direction parallel or oblique to the substrate. The p-type magnesium-, cadmium- and/or zinc-oxide-based II-VI Group compound semiconductor crystal layer is grown on the heated substrate, while introducing a pressing gas substantially in a vertical direction toward the substrate to press the reaction gas against the entire surface of the substrate.
    Type: Grant
    Filed: July 20, 2004
    Date of Patent: February 13, 2007
    Assignee: Cermet, Inc.
    Inventors: Jeffrey E. Nause, Joseph Owen Maciejewski, Vincente Munne, Shanthi Ganesan
  • Method of forming a p-type group II-VI semiconductor crystal layer on a substrate
    Patent number: 6887736
    Abstract: A method of depositing a p-type magnesium-, cadmium- and/or zinc-oxide-based II-VI Group compound semiconductor crystal layer over a substrate by a metalorganic chemical vapor deposition technique. A reaction gas is supplied to a surface of a heated substrate in a direction parallel or oblique to the substrate. The p-type magnesium-, cadmium- and/or zinc-oxide-based II-VI Group compound semiconductor crystal layer is grown on the heated substrate, while introducing a pressing gas substantially in a vertical direction toward the substrate to press the reaction gas against the entire surface of the substrate.
    Type: Grant
    Filed: April 23, 2003
    Date of Patent: May 3, 2005
    Assignee: Cermet, Inc.
    Inventors: Jeffrey E. Nause, Joseph Owen Maciejewski, Vincente Munne, Shanthi Ganesan
  • Method of forming a p-type group II-VI semiconductor crystal layer on a substrate
    Publication number: 20050020035
    Abstract: A method of depositing a p-type magnesium-, cadmium- and/or zinc-oxide-based II-VI Group compound semiconductor crystal layer over a substrate by a metalorganic chemical vapor deposition technique. A reaction gas is supplied to a surface of a heated substrate in a direction parallel or oblique to the substrate. The p-type magnesium-, cadmium- and/or zinc-oxide-based II-VI Group compound semiconductor crystal layer is grown on the heated substrate, while introducing a pressing gas substantially in a vertical direction toward the substrate to press the reaction gas against the entire surface of the substrate.
    Type: Application
    Filed: July 20, 2004
    Publication date: January 27, 2005
    Inventors: Jeffrey Nause, Joseph Maciejewski, Vincente Munne, Shanthi Ganesan
  • Method of forming a p-type group II-VI semiconductor crystal layer on a substrate
    Publication number: 20040058463
    Abstract: A method of depositing a p-type magnesium-, cadmium- and/or zinc-oxide-based II-VI Group compound semiconductor crystal layer over a substrate by a metalorganic chemical vapor deposition technique. A reaction gas is supplied to a surface of a heated substrate in a direction parallel or oblique to the substrate. The p-type magnesium-, cadmium- and/or zinc-oxide-based II-VI Group compound semiconductor crystal layer is grown on the heated substrate, while introducing a pressing gas substantially in a vertical direction toward the substrate to press the reaction gas against the entire surface of the substrate.
    Type: Application
    Filed: April 23, 2003
    Publication date: March 25, 2004
    Applicant: Cermet, Inc.
    Inventors: Jeffrey E. Nause, Joseph Owen Maciejewski, Vincente Munne, Shanthi Ganesan