Patents by Inventor Vincenzo Enea
Vincenzo Enea has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240030300Abstract: A MOS transistor, in particular a vertical channel transistor, includes a semiconductor body housing a body region, a source region, a drain electrode and gate electrodes. The gate electrodes extend in corresponding recesses which are symmetrical with respect to an axis of symmetry of the semiconductor body. The transistor also has spacers which are also symmetrical with respect to the axis of symmetry. A source electrode extends in electrical contact with the source region at a surface portion of the semiconductor body surrounded by the spacers and is in particular adjacent to the spacers. During manufacture the spacers are used to form in an auto-aligning way the source electrode which is symmetrical with respect to the axis of symmetry and equidistant from the gate electrodes.Type: ApplicationFiled: May 24, 2023Publication date: January 25, 2024Applicant: STMICROELECTRONICS S.r.l.Inventor: Vincenzo ENEA
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Publication number: 20230268421Abstract: A MOS transistor of vertical-conduction, trench-gate, type, including a first and a second spacer adjacent to portions of a gate oxide of the trench-gate protruding from a semiconductor substrate, the first and second spacers being specular to one another with respect to an axis of symmetry; enriched P+ regions are formed by implanting dopant species within the body regions using the spacers as implant masks. The formation of symmetrical spacers makes it possible to form source, body and body-enriched regions that are auto-aligned with the gate electrode, overcoming the limitations of MOS transistors of the known type in which such regions are formed by means of photolithographic techniques (with a consequent risk of asymmetry).Type: ApplicationFiled: February 13, 2023Publication date: August 24, 2023Applicants: STMICROELECTRONICS S.r.l., STMICROELECTRONICS PTE LTDInventors: Vincenzo ENEA, Voon Cheng NGWAN
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Patent number: 11705493Abstract: A MOS transistor, in particular a vertical channel transistor, includes a semiconductor body housing a body region, a source region, a drain electrode and gate electrodes. The gate electrodes extend in corresponding recesses which are symmetrical with respect to an axis of symmetry of the semiconductor body. The transistor also has spacers which are also symmetrical with respect to the axis of symmetry. A source electrode extends in electrical contact with the source region at a surface portion of the semiconductor body surrounded by the spacers and is in particular adjacent to the spacers. During manufacture the spacers are used to form in an auto-aligning way the source electrode which is symmetrical with respect to the axis of symmetry and equidistant from the gate electrodes.Type: GrantFiled: May 17, 2021Date of Patent: July 18, 2023Assignee: STMICROELECTRONICS S.r.l.Inventor: Vincenzo Enea
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Publication number: 20210273066Abstract: A MOS transistor, in particular a vertical channel transistor, includes a semiconductor body housing a body region, a source region, a drain electrode and gate electrodes. The gate electrodes extend in corresponding recesses which are symmetrical with respect to an axis of symmetry of the semiconductor body. The transistor also has spacers which are also symmetrical with respect to the axis of symmetry. A source electrode extends in electrical contact with the source region at a surface portion of the semiconductor body surrounded by the spacers and is in particular adjacent to the spacers. During manufacture the spacers are used to form in an auto-aligning way the source electrode which is symmetrical with respect to the axis of symmetry and equidistant from the gate electrodes.Type: ApplicationFiled: May 17, 2021Publication date: September 2, 2021Applicant: STMICROELECTRONICS S.r.l.Inventor: Vincenzo ENEA
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Patent number: 11038032Abstract: A MOS transistor, in particular a vertical channel transistor, includes a semiconductor body housing a body region, a source region, a drain electrode and gate electrodes. The gate electrodes extend in corresponding recesses which are symmetrical with respect to an axis of symmetry of the semiconductor body. The transistor also has spacers which are also symmetrical with respect to the axis of symmetry. A source electrode extends in electrical contact with the source region at a surface portion of the semiconductor body surrounded by the spacers and is in particular adjacent to the spacers. During manufacture the spacers are used to form in an auto-aligning way the source electrode which is symmetrical with respect to the axis of symmetry and equidistant from the gate electrodes.Type: GrantFiled: August 11, 2020Date of Patent: June 15, 2021Assignee: STMICROELECTRONICS S.r.l.Inventor: Vincenzo Enea
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Publication number: 20200373397Abstract: A MOS transistor, in particular a vertical channel transistor, includes a semiconductor body housing a body region, a source region, a drain electrode and gate electrodes. The gate electrodes extend in corresponding recesses which are symmetrical with respect to an axis of symmetry of the semiconductor body. The transistor also has spacers which are also symmetrical with respect to the axis of symmetry. A source electrode extends in electrical contact with the source region at a surface portion of the semiconductor body surrounded by the spacers and is in particular adjacent to the spacers. During manufacture the spacers are used to form in an auto-aligning way the source electrode which is symmetrical with respect to the axis of symmetry and equidistant from the gate electrodes.Type: ApplicationFiled: August 11, 2020Publication date: November 26, 2020Inventor: Vincenzo ENEA
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Patent number: 10770558Abstract: A MOS transistor, in particular a vertical channel transistor, includes a semiconductor body housing a body region, a source region, a drain electrode and gate electrodes. The gate electrodes extend in corresponding recesses which are symmetrical with respect to an axis of symmetry of the semiconductor body. The transistor also has spacers which are also symmetrical with respect to the axis of symmetry. A source electrode extends in electrical contact with the source region at a surface portion of the semiconductor body surrounded by the spacers and is in particular adjacent to the spacers. During manufacture the spacers are used to form in an auto-aligning way the source electrode which is symmetrical with respect to the axis of symmetry and equidistant from the gate electrodes.Type: GrantFiled: November 14, 2019Date of Patent: September 8, 2020Assignee: STMICROELECTRONICS S.r.l.Inventor: Vincenzo Enea
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Publication number: 20200083337Abstract: A MOS transistor, in particular a vertical channel transistor, includes a semiconductor body housing a body region, a source region, a drain electrode and gate electrodes. The gate electrodes extend in corresponding recesses which are symmetrical with respect to an axis of symmetry of the semiconductor body. The transistor also has spacers which are also symmetrical with respect to the axis of symmetry. A source electrode extends in electrical contact with the source region at a surface portion of the semiconductor body surrounded by the spacers and is in particular adjacent to the spacers. During manufacture the spacers are used to form in an auto-aligning way the source electrode which is symmetrical with respect to the axis of symmetry and equidistant from the gate electrodes.Type: ApplicationFiled: November 14, 2019Publication date: March 12, 2020Inventor: Vincenzo ENEA
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Patent number: 10510849Abstract: A MOS transistor, in particular a vertical channel transistor, includes a semiconductor body housing a body region, a source region, a drain electrode and gate electrodes. The gate electrodes extend in corresponding recesses which are symmetrical with respect to an axis of symmetry of the semiconductor body. The transistor also has spacers which are also symmetrical with respect to the axis of symmetry. A source electrode extends in electrical contact with the source region at a surface portion of the semiconductor body surrounded by the spacers and is in particular adjacent to the spacers. During manufacture the spacers are used to form in an auto-aligning way the source electrode which is symmetrical with respect to the axis of symmetry and equidistant from the gate electrodes.Type: GrantFiled: May 22, 2018Date of Patent: December 17, 2019Assignee: STMICROELECTRONICS S.R.L.Inventor: Vincenzo Enea
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Publication number: 20180342593Abstract: A MOS transistor, in particular a vertical channel transistor, includes a semiconductor body housing a body region, a source region, a drain electrode and gate electrodes. The gate electrodes extend in corresponding recesses which are symmetrical with respect to an axis of symmetry of the semiconductor body. The transistor also has spacers which are also symmetrical with respect to the axis of symmetry. A source electrode extends in electrical contact with the source region at a surface portion of the semiconductor body surrounded by the spacers and is in particular adjacent to the spacers. During manufacture the spacers are used to form in an auto-aligning way the source electrode which is symmetrical with respect to the axis of symmetry and equidistant from the gate electrodes.Type: ApplicationFiled: May 22, 2018Publication date: November 29, 2018Inventor: Vincenzo ENEA
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Publication number: 20160166601Abstract: The present invention relates to the use of xanthan gum as re-epithelializing agent and, in particular, to a pharmaceutical formulation comprising xanthan gum as a re-epithelializing active principle eventually mixed with hyaluronic acid. Said use and composition speed up and improve advantageously the formation of newly grown epithelium.Type: ApplicationFiled: February 25, 2016Publication date: June 16, 2016Inventors: Maria Grazia Mazzone, Grazia Paladino, Clara Marino, Ornella Peri, Vincenzo Enea
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Patent number: 8912164Abstract: The present invention relates to a pharmaceutical formulation comprising xanthan gum as a re-epithelializing active principle optionally mixed with hyaluronic acid. The composition speeds up and improves advantageously the formation of newly grown epithelium.Type: GrantFiled: April 24, 2003Date of Patent: December 16, 2014Assignee: SIFI S.p.A.Inventors: Maria Grazia Mazzone, Grazia Paladino, Clara Marino, Ornella Peri, Vincenzo Enea
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Patent number: 8420454Abstract: An embodiment of a power device having a first current-conduction terminal, a second current-conduction terminal, a control terminal receiving, in use, a control voltage of the power device, and a thyristor device and a first insulated-gate switch device coupled in series between the first and the second conduction terminals; the first insulated-gate switch device has a gate terminal coupled to the control terminal, and the thyristor device has a base terminal. The power device is further provided with: a second insulated-gate switch device, coupled between the first current-conduction terminal and the base terminal of the thyristor device, and having a respective gate terminal coupled to the control terminal; and a Zener diode, coupled between the base terminal of the thyristor device and the second current-conduction terminal so as to enable extraction of current from the base terminal in a given operating condition.Type: GrantFiled: January 31, 2011Date of Patent: April 16, 2013Assignee: STMicroelectronics S.r.l.Inventors: Cesare Ronsisvalle, Vincenzo Enea
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Patent number: 7982528Abstract: An embodiment of a power device having a first current-conduction terminal, a second current-conduction terminal, a control terminal receiving, in use, a control voltage of the power device, and a thyristor device and a first insulated-gate switch device connected in series between the first and the second conduction terminals; the first insulated-gate switch device has a gate terminal connected to the control terminal, and the thyristor device has a base terminal. The power device is further provided with: a second insulated-gate switch device, connected between the first current-conduction terminal and the base terminal of the thyristor device, and having a respective gate terminal connected to the control terminal; and a Zener diode, connected between the base terminal of the thyristor device and the second current-conduction terminal so as to enable extraction of current from the base terminal in a given operating condition.Type: GrantFiled: May 18, 2006Date of Patent: July 19, 2011Assignee: STMicroelectronics, S.r.l.Inventors: Cesare Ronsisvalle, Vincenzo Enea
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Publication number: 20110129967Abstract: An embodiment of a power device having a first current-conduction terminal, a second current-conduction terminal, a control terminal receiving, in use, a control voltage of the power device, and a thyristor device and a first insulated-gate switch device connected in series between the first and the second conduction terminals; the first insulated-gate switch device has a gate terminal connected to the control terminal, and the thyristor device has a base terminal. The power device is further provided with: a second insulated-gate switch device, connected between the first current-conduction terminal and the base terminal of the thyristor device, and having a respective gate terminal connected to the control terminal; and a Zener diode, connected between the base terminal of the thyristor device and the second current-conduction terminal so as to enable extraction of current from the base terminal in a given operating condition.Type: ApplicationFiled: January 31, 2011Publication date: June 2, 2011Applicant: STMicroelectronics S.r.I.Inventors: Cesare RONSISVALLE, Vincenzo ENEA
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Patent number: 7936047Abstract: A method realizes a contact of a first well of a first type of dopant integrated in a semiconductor substrate next to a second well of a second type of dopant and forming with it a parasitic diode. The method comprises: formation of the first well; formation of the second well next to the first well; definition of an oxide layer above the first and second wells; and formation of an electric contact layer above the oxide layer in correspondence with the first well for realizing an electric contact with it. The definition step of the oxide layer further comprises a deposition step of this oxide layer above the whole first well and a removal step of at least one portion of the oxide layer in correspondence with a contact area of the first well so that the contact area has a shorter length than a length of the first well.Type: GrantFiled: February 28, 2008Date of Patent: May 3, 2011Assignee: STMicroelectronics S.r.l.Inventors: Vincenzo Enea, Cesare Ronsisvalle
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Patent number: 7868382Abstract: A power actuator of the emitter-switched type is described, the power actuator comprising at least one high voltage bipolar transistor and a low voltage DMOS transistor connected in cascode configuration between a collector terminal of the bipolar transistor and a source terminal of the DMOS transistor and having respective control terminals. Advantageously, the power actuator further comprises at least a Zener diode, inserted between the source terminal of the DMOS transistor and the control transistor of the bipolar transistor.Type: GrantFiled: January 8, 2008Date of Patent: January 11, 2011Assignee: STMicroelectronics S.r.l.Inventors: Cesare Ronsisvalle, Vincenzo Enea
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Publication number: 20100001783Abstract: An embodiment of a power device having a first current-conduction terminal, a second current-conduction terminal, a control terminal receiving, in use, a control voltage of the power device, and a thyristor device and a first insulated-gate switch device connected in series between the first and the second conduction terminals; the first insulated-gate switch device has a gate terminal connected to the control terminal, and the thyristor device has a base terminal. The power device is further provided with: a second insulated-gate switch device, connected between the first current-conduction terminal and the base terminal of the thyristor device, and having a respective gate terminal connected to the control terminal; and a Zener diode, connected between the base terminal of the thyristor device and the second current-conduction terminal so as to enable extraction of current from the base terminal in a given operating condition.Type: ApplicationFiled: May 18, 2006Publication date: January 7, 2010Applicant: STMICROELECTRONICS S.R.L.Inventors: Cesare Ronsisvalle, Vincenzo Enea
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Publication number: 20080246118Abstract: A method realizes a contact of a first well of a first type of dopant integrated in a semiconductor substrate next to a second well of a second type of dopant and forming with it a parasitic diode. The method comprises: formation of the first well; formation of the second well next to the first well; definition of an oxide layer above the first and second wells; and formation of an electric contact layer above the oxide layer in correspondence with the first well for realizing an electric contact with it. The definition step of the oxide layer further comprises a deposition step of this oxide layer above the whole first well and a removal step of at least one portion of the oxide layer in correspondence with a contact area of the first well so that the contact area has a shorter length than a length of the first well.Type: ApplicationFiled: February 28, 2008Publication date: October 9, 2008Applicant: STMicroelectronics S.r.l.Inventors: Vincenzo Enea, Cesare Ronsisvalle
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Publication number: 20080169506Abstract: A power actuator of the emitter-switched type is described, the power actuator comprising at least one high voltage bipolar transistor and a low voltage DMOS transistor connected in cascode configuration between a collector terminal of the bipolar transistor and a source terminal of the DMOS transistor and having respective control terminals. Advantageously, the power actuator further comprises at least a Zener diode, inserted between the source terminal of the DMOS transistor and the control transistor of the bipolar transistor.Type: ApplicationFiled: January 8, 2008Publication date: July 17, 2008Applicant: STMICROELECTRONICS S.R.L.Inventors: Cesare Ronsisvalle, Vincenzo Enea