Patents by Inventor Vinita Singh

Vinita Singh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for cleaning a process chamber
    Publication number: 20050211265
    Abstract: Methods and apparatus for cleaning deposition chambers are presented. The cleaning methods include the use of a remote plasma source to generate reactive species from a cleaning gas to clean deposition chambers. A flow of helium or argon may be used during chamber cleaning. Radio frequency power may also be used in combination with a remote plasma source to clean deposition chambers.
    Type: Application
    Filed: May 19, 2005
    Publication date: September 29, 2005
    Inventors: Yi Zheng, Vinita Singh, Srinivas Nemani, Chen-an Chen, Ju-Hyung Lee, Shankar Venkataraman
  • Method for cleaning a process chamber
    Patent number: 6902629
    Abstract: Methods and apparatus for cleaning deposition chambers are presented. The cleaning methods include the use of a remote plasma source to generate reactive species from a cleaning gas to clean deposition chambers. A flow of helium or argon may be used during chamber cleaning. Radio frequency power may also be used in combination with a remote plasma source to clean deposition chambers.
    Type: Grant
    Filed: April 12, 2002
    Date of Patent: June 7, 2005
    Assignee: Applied Materials, Inc.
    Inventors: Yi Zheng, Vinita Singh, Srinivas D. Nemani, Chen-An Chen, Ju-Hyung Lee, Shankar Venkataraman
  • Use of cyclic siloxanes for hardness improvement
    Publication number: 20040234688
    Abstract: A method for depositing a low dielectric constant film having a dielectric constant of about 3.5 or less is provided by blending one or more cyclic organosilicon compounds, one or more aliphatic organosilicon compounds, and one or more low molecular weight aliphatic hydrocarbon compounds. In one aspect, a gas mixture comprising one or more cyclic organosilicon compounds, one or more aliphatic organosilicon compounds, one or more aliphatic hydrocarbon compounds, one or more oxidizing gases, and a carrier gas is reacted at conditions sufficient to deposit a low dielectric constant film on a substrate surface.
    Type: Application
    Filed: June 23, 2004
    Publication date: November 25, 2004
    Inventors: Vinita Singh, Srinivas D. Nemani, Yi Zheng, Lihua Li, Tzu-Fang Huang, Li-Qun Xia, Ellie Yieh
  • Use of cyclic siloxanes for hardness improvement of low k dielectric films
    Patent number: 6815373
    Abstract: A method for depositing a low dielectric constant film having a dielectric constant of about 3.5 or less is provided by blending one or more cyclic organosilicon compounds, one or more aliphatic organosilicon compounds, and one or more low molecular weight aliphatic hydrocarbon compounds. In one aspect, a gas mixture comprising one or more cyclic organosilicon compounds, one or more aliphatic organosilicon compounds, one or more aliphatic hydrocarbon compounds, one or more oxidizing gases, and a carrier gas is reacted at conditions sufficient to deposit a low dielectric constant film on a substrate surface.
    Type: Grant
    Filed: April 16, 2002
    Date of Patent: November 9, 2004
    Assignee: Applied Materials Inc.
    Inventors: Vinita Singh, Srinivas D. Nemani, Yi Zheng, Lihua Li, Tzu-Fang Huang, Li-Qun Xia, Ellie Yieh
  • Use of cyclic siloxanes for hardness improvement
    Publication number: 20030194880
    Abstract: A method for depositing a low dielectric constant film having a dielectric constant of about 3.5 or less is provided by blending one or more cyclic organosilicon compounds, one or more aliphatic organosilicon compounds, and one or more low molecular weight aliphatic hydrocarbon compounds. In one aspect, a gas mixture comprising one or more cyclic organosilicon compounds, one or more aliphatic organosilicon compounds, one or more aliphatic hydrocarbon compounds, one or more oxidizing gases, and a carrier gas is reacted at conditions sufficient to deposit a low dielectric constant film on a substrate surface.
    Type: Application
    Filed: April 16, 2002
    Publication date: October 16, 2003
    Applicant: Applied Materials, Inc.
    Inventors: Vinita Singh, Srinivas D. Nemani, Yi Zheng, Lihua Li, Tzu-Fang Huang, Li-Qun Xia, Ellie Yieh
  • Method for cleaning a process chamber
    Publication number: 20030192568
    Abstract: Methods and apparatus for cleaning deposition chambers are presented. The cleaning methods include the use of a remote plasma source to generate reactive species from a cleaning gas to clean deposition chambers. A flow of helium or argon may be used during chamber cleaning. Radio frequency power may also be used in combination with a remote plasma source to clean deposition chambers.
    Type: Application
    Filed: April 12, 2002
    Publication date: October 16, 2003
    Applicant: Applied Materials, Inc.
    Inventors: Yi Zheng, Vinita Singh, Srinivas D. Nemani, Chen-An Chen, Ju-Hyung Lee, Shankar Venkataraman