Patents by Inventor Vinod Sannareddy

Vinod Sannareddy has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9059715
    Abstract: Methods and systems to implement voltage level shifting with interim-voltage-controlled contention-interruption. A voltage level shifter (VLS) may include voltage level shift circuitry to level shift an input logical state from an input voltage swing to an output voltage swing. The VLS may include contention circuitry, a contention interrupter, and an interrupt controller to generate a contention-interrupt control having an interim voltage swing. A lower limit of the interim voltage swing may correspond to a lower limit of the output voltage swing. An upper limit of the interim voltage swing may correspond to an upper limit of the input voltage swing. The VLS may be implemented to level shift true and complimentary logical states, such as with cascode voltage switch logic (CVSL).
    Type: Grant
    Filed: November 14, 2011
    Date of Patent: June 16, 2015
    Assignee: Intel Corporation
    Inventors: Steven K. Hsu, Vinod Sannareddy, Amit Agarwal, Feroze A. Merchant, Ram K. Krishnamurthy
  • Publication number: 20130271199
    Abstract: Methods and systems to implement voltage level shifting with interim-voltage-controlled contention-interruption. A voltage level shifter (VLS) may include voltage level shift circuitry to level shift an input logical state from an input voltage swing to an output voltage swing. The VLS may include contention circuitry, a contention interrupter, and an interrupt controller to generate a contention-interrupt control having an interim voltage swing. A lower limit of the interim voltage swing may correspond to a lower limit of the output voltage swing. An upper limit of the interim voltage swing may correspond to an upper limit of the input voltage swing. The VLS may be implemented to level shift true and complimentary logical states, such as with cascode voltage switch logic (CVSL).
    Type: Application
    Filed: November 14, 2011
    Publication date: October 17, 2013
    Applicant: INTEL CORPORATION
    Inventors: Steven K. Hsu, Vinod Sannareddy, Amit Agarwal, Feroze A. Merchant, Ram K. Krishnamurthy
  • Patent number: 8068371
    Abstract: Methods and systems to dynamically control state-retention strengths of a plurality of memory cells during a write operation to a subset of the memory cells. Dynamic control may include weakening state-retention strengths of the plurality of memory cells during a write operation to a subset of the memory cells, while preserving state-retention abilities of remaining ones of the plurality of memory cells. Weakening may include adjusting one or more resistances between one or more power supplies and the plurality of memory cells. Dynamic control may be selectively performed on portions of each of the memory cells in response to an input data logic state. Dynamic control may reduce a write contention within the subset of memory cells without disabling state-retention abilities of remaining ones of the plurality of memory cells, and may improve write response times of the memory cells.
    Type: Grant
    Filed: December 31, 2008
    Date of Patent: November 29, 2011
    Assignee: Intel Corporation
    Inventors: Feroze A. Merchant, John Reginald Riley, Vinod Sannareddy
  • Publication number: 20100165756
    Abstract: Methods and systems to dynamically control state-retention strengths of a plurality of memory cells during a write operation to a subset of the memory cells. Dynamic control may include weakening state-retention strengths of the plurality of memory cells during a write operation to a subset of the memory cells, while preserving state-retention abilities of remaining ones of the plurality of memory cells. Weakening may include adjusting one or more resistances between one or more power supplies and the plurality of memory cells. Dynamic control may be selectively performed on portions of each of the memory cells in response to an input data logic state. Dynamic control may reduce a write contention within the subset of memory cells without disabling state-retention abilities of remaining ones of the plurality of memory cells, and may improve write response times of the memory cells.
    Type: Application
    Filed: December 31, 2008
    Publication date: July 1, 2010
    Inventors: Feroze A. Merchant, John Reginald Riley, Vinod Sannareddy