Abstract: Methods and apparatus for processing a substrate. For example, a processing chamber can include a power source, an amplifier connected to the power source, comprising at least one of a gallium nitride (GaN) transistor or a gallium arsenide (GaAs) transistor, and configured to amplify a power level of an input signal received from the power source to heat a substrate in a process volume, and a cooling plate configured to receive a coolant to cool the amplifier during operation.

Abstract: Substrate processing systems or platforms and methods configured to process substrates including of extreme ultraviolet (EUV) mask blanks are disclosed. Systems or platforms provide a small footprint, high throughput of substrates and minimize defect generation. The substrate processing system platform comprises a single central transfer chamber, a single transfer robot, a substrate flipping fixture, and processing chambers are positioned around the single central transfer chamber.

Abstract: A heating module for a substrate processing chamber includes heating lamps coupled to a reflector plate and a heat exchanger. The heat exchanger cools a gas within the heating module. A fan within the heating module circulates the gas through apertures in the reflector plate to cool the heating bulbs. The gas is cooled by the heat exchanger, and is recirculated. One or more shrouds directs the gas as the gas is being circulated.

Abstract: Methods and apparatus for a cooling plate for solid state power amplifiers are provided herein. In some embodiments, a cooling plate of a solid state power amplifier includes a body having a rectangular shape, a first sidewall opposite a second sidewall, and a third sidewall opposite a fourth sidewall; a plurality of holes disposed on a first side of the body configured to mount a plurality of heat generating microelectronic components; and a channel having a plurality of segments disposed within the body and extending from a first port disposed on the first sidewall to a second port disposed on the first sidewall.

Abstract: Apparatus for processing a substrate are described herein. More specifically, embodiments described herein relate to separate pre-clean process modules and pre-clean control modules coupled to a cluster tool assembly. Each pre-clean process module and each pre-clean control module are connected by a cable conduit which is configured to have power and control cables passing therethrough between the pre-clean process module and the ore-clean control module. A maintenance passage is formed through the cluster tool assembly. Each of a purge gas source, a process gas source, a manometer, an isolation port, and a throttle valve are all accessible from one side of the pre-clean process module.

Abstract: Methods and apparatus for a substrate processing chamber are provided herein. In some embodiments, a substrate processing chamber includes a chamber body having sidewalls defining an interior volume having a polygon shape; a selectively sealable elongated opening disposed in an upper portion of the chamber body for transferring one or more substrates into or out of the chamber body; a funnel disposed at a first end of the chamber body, wherein the funnel increases in size along a direction from an outer surface of the chamber body to the interior volume; and a pump port disposed at a second end of the chamber body opposite the funnel.

Abstract: An apparatus for determining temperatures of substrates in microwave and/or vacuum environments. A substrate holder with a plurality of support pins includes a temperature sensor assembly with at least a portion of a surface with a phosphorous coating is configured to be inserted in at least one pin support position from an inner area of the substrate holder and in at least one pin support position from an outer area of the substrate holder. The temperature sensor assembly includes a temperature sensor pin with a spring that is microwave transparent. The temperature sensor pin is made of a material with a thermal conductivity greater than approximately 200 W/mK and a low thermal mass which is microwave transparent. An optical transmission assembly is embedded into at least a portion of the substrate holder to receive light emissions from a surface of the temperature sensor pin.

Abstract: Apparatus and methods for improving flatness of extreme ultraviolet (EUV) mask blanks are disclosed. The apparatus and methods may utilize one or more of heating the backside and/or the front side of the EUV mask blank and a cooling system. Interfacial layers of the EUV mask blank are selectively heated, resulting in improved flatness of the EUV mask blanks.

Abstract: An apparatus, methods and controllers for electrostatically chucking varied substrate materials are disclosed. Some embodiments of the disclosure provide electrostatic chucks with variable polarity and/or voltage. Some embodiments of the disclosure provide electrostatic chucks able to operate as monopolar and bipolar electrostatic chucks. Some embodiments of the disclosure provide bipolar electrostatic chucks able to compensate for substrate bias and produce approximately equal chucking force at different electrodes.

Abstract: Substrate processing systems or platforms and methods configured to process substrates including of extreme ultraviolet (EUV) mask blanks are disclosed. Systems or platforms provide a small footprint, high throughput of substrates and minimize defect generation. The substrate processing system platform comprises a single central transfer chamber, a single transfer robot, a substrate flipping fixture, and processing chambers are positioned around the single central transfer chamber.

Abstract: An ex situ physical vapor deposition (PVD) process kit conditioning apparatus configured to condition process kit components of a PVD substrate processing chamber, the ex situ PVD process kit conditioning apparatus comprising a chamber assembly, a central cathode assembly configured to mount one or more targets. The apparatus is configured to receive one or more components of a process kit of a PVD substrate processing chamber and the central cathode assembly is positioned and configured so that the apparatus deposits the defect reduction coating substantially uniformly on an inner surface of a process kit component of the PVD substrate processing chamber.

Abstract: Apparatus and methods for improving flatness of extreme ultraviolet (EUV) mask blanks are disclosed. The apparatus and methods may utilize one or more of heating the backside and/or the front side of the EUV mask blank and a cooling system. Interfacial layers of the EUV mask blank are selectively heated, resulting in improved flatness of the EUV mask blanks.

Abstract: Embodiments of the present disclosure generally relate to apparatus for substrate processing, and more specifically to apparatus for rotating substrates and to uses thereof. In an embodiment, an apparatus for rotating a substrate is provided. The apparatus includes a levitatable rotor comprising a plurality of magnets embedded therein, a plurality of gas bearings positioned to levitate the levitatable rotor, and a stator magnetically coupled to the levitatable rotor, the stator for producing a rotating magnetic field. Apparatus for processing a substrate with the apparatus for rotating substrates as well as methods of use are also described.

Abstract: Methods and apparatus for processing a substrate. For example, a processing chamber can include a power source, an amplifier connected to the power source, comprising at least one of a gallium nitride (GaN) transistor or a gallium arsenide (GaAs) transistor, and configured to amplify a power level of an input signal received from the power source to heat a substrate in a process volume, and a cooling plate configured to receive a coolant to cool the amplifier during operation.

Abstract: An apparatus for determining temperatures of substrates in microwave and/or vacuum environments. A substrate holder with a plurality of support pins includes a temperature sensor assembly with at least a portion of a surface with a phosphorous coating is configured to be inserted in at least one pin support position from an inner area of the substrate holder and in at least one pin support position from an outer area of the substrate holder. The temperature sensor assembly includes a temperature sensor pin with a spring that is microwave transparent. The temperature sensor pin is made of a material with a thermal conductivity greater than approximately 200 W/mK and a low thermal mass which is microwave transparent. An optical transmission assembly is embedded into at least a portion of the substrate holder to receive light emissions from a surface of the temperature sensor pin.

Abstract: Methods and apparatus for processing a substrate are provided. The apparatus, for example, can include a process chamber comprising a chamber body defining a processing volume and having a view port coupled to the chamber body; a substrate support disposed within the processing volume and having a support surface to support a substrate; and an infrared temperature sensor (IRTS) disposed outside the chamber body adjacent the view port to measure a temperature of the substrate when being processed in the processing volume, the IRTS movable relative to the view port for scanning the substrate through the view port.

Abstract: An apparatus, methods and controllers for electrostatically chucking varied substrate materials are disclosed. Some embodiments of the disclosure provide electrostatic chucks with variable polarity and/or voltage. Some embodiments of the disclosure provide electrostatic chucks able to operate as monopolar and bipolar electrostatic chucks. Some embodiments of the disclosure provide bipolar electrostatic chucks able to compensate for substrate bias and produce approximately equal chucking force at different electrodes.

Abstract: Methods and apparatus for processing a substrate are provided. The apparatus, for example, can include a process chamber comprising a chamber body defining a processing volume and having a view port coupled to the chamber body; a substrate support disposed within the processing volume and having a support surface to support a substrate; and an infrared temperature sensor (IRTS) disposed outside the chamber body adjacent the view port to measure a temperature of the substrate when being processed in the processing volume, the IRTS movable relative to the view port for scanning the substrate through the view port.

Abstract: Methods and apparatus for curing a substrate or polymer using variable microwave frequency are provided herein. In some embodiments, a method of curing a substrate or polymer using variable microwave frequency includes: contacting a substrate or polymer with a plurality of predetermined discontinuous microwave energy bandwidths or a plurality of predetermined discontinuous microwave energy frequencies to cure the substrate or polymer.

Abstract: Methods and apparatus for a substrate processing chamber are provided herein. In some embodiments, a substrate processing chamber includes a chamber body having sidewalls defining an interior volume having a polygon shape; a selectively sealable elongated opening disposed in an upper portion of the chamber body for transferring one or more substrates into or out of the chamber body; a funnel disposed at a first end of the chamber body, wherein the funnel increases in size along a direction from an outer surface of the chamber body to the interior volume; and a pump port disposed at a second end of the chamber body opposite the funnel.