Abstract: A plasma conditioning method of improving the adhesion between an integrated circuit chip, having active and passive surfaces, the active surface polymer-coated and having a plurality of electrical coupling members, and an insulating underfill material. The method comprises the steps of positioning a wafer having a plurality of integrated circuits, including the coupling members, in a vacuum chamber of a plasma apparatus so that the polymer-coated surface faces the plasma source. Next, a plasma is initiated; the ion mean free path is controlled so that the ions reach the wafer surface with predetermined energy. The wafer surface is then exposed to the plasma for a length of time sufficient to roughen the polymer surface, clean the polymer surface from organic contamination and improve the surface affinity to adhesion. The adhesion ability of this surface to organic underfill material is thus enhanced.

Abstract: A plasma conditioning method of improving the adhesion between an integrated circuit chip, having active and passive surfaces, the active surface polymer-coated and having a plurality of electrical coupling members, and an insulating underfill material. The method comprises the steps of positioning a wafer having a plurality of integrated circuits, including the coupling members, in a vacuum chamber of a plasma apparatus so that the polymer-coated surface faces the plasma source. Next, a plasma is initiated; the ion mean free path is controlled so that the ions reach the wafer surface with predetermined energy. The wafer surface is then exposed to the plasma for a length of time sufficient to roughen the polymer surface, clean the polymer surface from organic contamination and improve the surface affinity to adhesion. The adhesion ability of this surface to organic underfill material is thus enhanced.

Abstract: A system (100) for manufacturing product, in which a first work station (101) is operable to perform a first manufacturing action on the product parts; this first station has a first entrance (101a) and a first exit 101b). A second work station (102) is operable to perform a second manufacturing action on the product parts; this second station has a second entrance (102a) and a second exit (102b). A transport line (103) between the first exit and the second entrance is operable to move the product parts under computer control. A chamber (104) encloses a portion of the line and is constructed so that the transport achieves a balanced throughput from the first station to the second station, while the product parts are exposed to computer-controlled environmental conditions (110) during transport through the chamber. The balanced throughput in the chamber is achieved by waiting lines for the product with computer-controlled monitors (105a) for product parts' positions and times in the chamber.

Abstract: A plasma conditioning method of improving the adhesion between an integrated circuit chip, having active and passive surfaces, the active surface polymer-coated and having a plurality of electrical coupling members, and an insulating underfill material. The method comprises the steps of positioning a wafer having a plurality of integrated circuits, including the coupling members, in a vacuum chamber of a plasma apparatus so that the polymer-coated surface faces the plasma source. Next, a plasma is initiated; the ion mean free path is controlled so that the ions reach the wafer surface with predetermined energy. The wafer surface is then exposed to the plasma for a length of time sufficient to roughen the polymer surface, clean the polymer surface from organic contamination and improve the surface affinity to adhesion. The adhesion ability of this surface to organic underfill material is thus enhanced.

Abstract: A plasma conditioning method of improving the adhesion between an integrated circuit chip, having active and passive surfaces, the active surface polymer-coated and having a plurality of electrical coupling members, and an insulating underfill material. The method comprises the steps of positioning a wafer having a plurality of integrated circuits, including the coupling members, in a vacuum chamber of a plasma apparatus so that the polymer-coated surface faces the plasma source. Next, a plasma is initiated; the ion mean free path is controlled so that the ions reach the wafer surface with predetermined energy. The wafer surface is then exposed to the plasma for a length of time sufficient to roughen the polymer surface, clean the polymer surface from organic contamination and improve the surface affinity to adhesion. The adhesion ability of this surface to organic underfill material is thus enhanced.

Abstract: A plasma conditioning method of improving the adhesion between an integrated circuit chip, having active and passive surfaces, the active surface polymer-coated and having a plurality of electrical coupling members, and an insulating underfill material. The method comprises the steps of positioning a wafer having a plurality of integrated circuits, including the coupling members, in a vacuum chamber of a plasma apparatus so that the polymer-coated surface faces the plasma source. Next, a plasma is initiated; the ion mean free path is controlled so that the ions reach the wafer surface with predetermined energy. The wafer surface is then exposed to the plasma for a length of time sufficient to roughen the polymer surface, clean the polymer surface from organic contamination and improve the surface affinity to adhesion. The adhesion ability of this surface to organic underfill material is thus enhanced.

Abstract: A plasma conditioning method of improving the adhesion between an integrated circuit chip, having active and passive surfaces, the active surface polymer-coated and having a plurality of electrical coupling members, and an insulating underfill material. The method comprises the steps of positioning a wafer having a plurality of integrated circuits, including the coupling members, in a vacuum chamber of a plasma apparatus so that the polymer-coated surface faces the plasma source. Next, a plasma is initiated; the ion mean free path is controlled so that the ions reach the wafer surface with predetermined energy. The wafer surface is then exposed to the plasma for a length of time sufficient to roughen the polymer surface, clean the polymer surface from organic contamination and improve the surface affinity to adhesion. The adhesion ability of this surface to organic underfill material is thus enhanced.

Abstract: Reinforced IC assemblies and methods useful for manufacturing the same are described. A reinforced IC assembly has a mounting surface for receiving a semiconductor die and a semiconductor die affixed to the mounting surface with an underfill material interposed between the mounting surface and the semiconductor die. Fillet material reinforces the junction of the die and the mounting surface. The underfill material and the fillet material have compatible chemistries for forming a strong bond. Preferably, a underfill material having a relatively low viscosity is used, and fillet material having a relatively high viscosity is used. Exemplary embodiments of the invention are described in which a base material is used as the basis for both the underfill material and the fillet material; the base material is modified with an additive to form the fillet material.

Abstract: A system (100) for manufacturing product, in which a first work station (101) is operable to perform a first manufacturing action on the product parts; this first station has a first entrance (101a) and a first exit 101b). A second work station (102) is operable to perform a second manufacturing action on the product parts; this second station has a second entrance (102a) and a second exit (102b). A transport line (103) between the first exit and the second entrance is operable to move the product parts under computer control. A chamber (104) encloses a portion of the line and is constructed so that the transport achieves a balanced throughput from the first station to the second station, while the product parts are exposed to computer-controlled environmental conditions (110) during transport through the chamber. The balanced throughput in the chamber is achieved by waiting lines for the product with computer-controlled monitors (105a) for product parts' positions and times in the chamber.

Abstract: A system (100) for manufacturing product, in which a first work station (101) is operable to perform a first manufacturing action on the product parts; this first station has a first entrance (101a) and a first exit 101b). A second work station (102) is operable to perform a second manufacturing action on the product parts; this second station has a second entrance (102a) and a second exit (102b). A transport line (103) between the first exit and the second entrance is operable to move the product parts under computer control. A chamber (104) encloses a portion of the line and is constructed so that the transport achieves a balanced throughput from the first station to the second station, while the product parts are exposed to computer-controlled environmental conditions (110) during transport through the chamber. The balanced throughput in the chamber is achieved by waiting lines for the product with computer-controlled monitors (105a) for product parts' positions and times in the chamber.

Abstract: A plasma conditioning method of improving the adhesion between an integrated circuit chip, having active and passive surfaces, the active surface polymer-coated and having a plurality of electrical coupling members, and an insulating underfill material. The method comprises the steps of positioning a wafer having a plurality of integrated circuits, including the coupling members, in a vacuum chamber of a plasma apparatus so that the polymer-coated surface faces the plasma source. Next, a plasma is initiated; the ion mean free path is controlled so that the ions reach the wafer surface with predetermined energy. The wafer surface is then exposed to the plasma for a length of time sufficient to roughen the polymer surface, clean the polymer surface from organic contamination and improve the surface affinity to adhesion. The adhesion ability of this surface to organic underfill material is thus enhanced.

Abstract: A plasma conditioning method of improving the adhesion between an integrated circuit chip, having active and passive surfaces, the active surface polymer-coated and having a plurality of electrical coupling members, and an insulating underfill material. The method comprises the steps of positioning a wafer having a plurality of integrated circuits, including the coupling members, in a vacuum chamber of a plasma apparatus so that the polymer-coated surface faces the plasma source. Next, a plasma is initiated; the ion mean free path is controlled so that the ions reach the wafer surface with predetermined energy. The wafer surface is then exposed to the plasma for a length of time sufficient to roughen the polymer surface, clean the polymer surface from organic contamination and improve the surface affinity to adhesion. The adhesion ability of this surface to organic underfill material is thus enhanced.

Abstract: A semiconductor device (700) having a leadframe with a first plurality of segments (110) having a narrow end portion (111) in a first horizontal plane (211) and a wide end portion (112) in a second horizontal plane (212). The leadframe further includes a second plurality of segments (120) having a narrow center portion (121) in the first horizontal plane, at least one wide center portion (122) in the second horizontal plane, and narrow end portions (123) in a third horizontal plane (213), which is located between the first and second planes.

Abstract: A semiconductor device (700) having a leadframe with a first plurality of segments (110) having a narrow end portion (111) in a first horizontal plane (211) and a wide end portion (112) in a second horizontal plane (212). The leadframe further includes a second plurality of segments (120) having a narrow center portion (121) in the first horizontal plane, at least one wide center portion (122) in the second horizontal plane, and narrow end portions (123) in a third horizontal plane (213), which is located between the first and second planes.

Abstract: A system (100) for manufacturing product, in which a first work station (101) is operable to perform a first manufacturing action on the product parts; this first station has a first entrance (101a) and a first exit 101b). A second work station (102) is operable to perform a second manufacturing action on the product parts; this second station has a second entrance (102a) and a second exit (102b). A transport line (103) between the first exit and the second entrance is operable to move the product parts under computer control. A chamber (104) encloses a portion of the line and is constructed so that the transport achieves a balanced throughput from the first station to the second station, while the product parts are exposed to computer-controlled environmental conditions (110) during transport through the chamber. The balanced throughput in the chamber is achieved by waiting lines for the product with computer-controlled monitors (105a) for product parts' positions and times in the chamber.

Abstract: A plasma conditioning method of improving the adhesion between an integrated circuit chip, having active and passive surfaces, the active surface polymer-coated and having a plurality of electrical coupling members, and an insulating underfill material. The method comprises the steps of positioning a wafer having a plurality of integrated circuits, including the coupling members, in a vacuum chamber of a plasma apparatus so that the polymer-coated surface faces the plasma source. Next, a plasma is initiated; the ion mean free path is controlled so that the ions reach the wafer surface with predetermined energy. The wafer surface is then exposed to the plasma for a length of time sufficient to roughen the polymer surface, clean the polymer surface from organic contamination and improve the surface affinity to adhesion. The adhesion ability of this surface to organic underfill material is thus enhanced.

Abstract: A plasma conditioning method of improving the adhesion between an integrated circuit chip, having active and passive surfaces, the active surface polymer-coated and having a plurality of electrical coupling members, and an insulating underfill material. The method comprises the steps of positioning a wafer having a plurality of integrated circuits, including the coupling members, in a vacuum chamber of a plasma apparatus so that the polymer-coated surface faces the plasma source. Next, a plasma is initiated; the ion mean free path is controlled so that the ions reach the wafer surface with predetermined energy. The wafer surface is then exposed to the plasma for a length of time sufficient to roughen the polymer surface, clean the polymer surface from organic contamination and improve the surface affinity to adhesion. The adhesion ability of this surface to organic underfill material is thus enhanced.