Abstract: An integrated device includes a die attach pad, a main die, a stacked die, and a mold compound. The main die has a first (e.g., bottom) surface attached to the die attach pad and has a second (e.g., top) surface. The stacked die is attached to the second surface of the main die using, for example, an adhesive film. The main die and the stacked die include silicon crystal. The mold compound encapsulates the die attach pad, the main die, and the stacked die.

Abstract: A laterally-diffused metal-oxide-semiconductor (LDMOS) transistor includes a first well of a first conductivity type, a source of a second conductivity type formed in the first well, a drift region of the second conductivity type formed in the first well, and a second well of the second conductivity type formed in the first well and below the drift region. The drift region is separated from the source. The LDMOS transistor further includes a drain of the second conductivity type formed in the drift region, and includes a concentrator of the second conductivity type formed in the drift region and separated from the drain. A distance between the concentrator and the source is less than a distance between the drain and the source.