Abstract: A process for the production of a permanent, electrically conductive connection between a first metal surface of a first substrate and a second metal surface of a second substrate, wherein a permanent, electrically conductive connection is produced, at least primarily, by substitution diffusion between metal ions and/or metal atoms of the two metal surfaces.

Abstract: A device, a system and a method for bonding two substrates. A first substrate holder has a recess and an elevation.

Abstract: A device, a system and a method for bonding two substrates. A first substrate holder has a recess and an elevation.

Abstract: A device, a system and a method for bonding two substrates. A first substrate holder has a recess and an elevation.

Abstract: A process for the production of a permanent, electrically conductive connection between a first metal surface of a first substrate and a second metal surface of a second substrate, wherein a permanent, electrically conductive connection is produced, at least primarily, by substitution diffusion between metal ions and/or metal atoms of the two metal surfaces.

Abstract: A device, a system and a method for bonding two substrates. A first substrate holder has a recess and an elevation.

Abstract: A process for the production of a permanent, electrically conductive connection between a first metal surface of a first substrate and a second metal surface of a second substrate, wherein a permanent, electrically conductive connection is produced, at least primarily, by substitution diffusion between metal ions and/or metal atoms of the two metal surfaces.

Abstract: A device, a system and a method for bonding two substrates. A first substrate holder has a recess and an elevation.

Abstract: A device and method is described for producing an electrically conductive direct bond between a bonding side of a first substrate and a bonding side of a second substrate. A workspace is included that can be closed, gas-tight, against the environment and can be supplied with a vacuum. The workspace includes a) at least one plasma chamber for modifying at least one of the bonding sides and at least one bonding chamber for bonding the bonding sides, and/or b) at least one combined bonding/plasma chamber for modifying at least one of the bonding sides and for bonding the bonding sides.

Abstract: A device, a system and a method for bonding two substrates. A first substrate holder has a recess and an elevation.

Abstract: A device, a system and a method for bonding two substrates. A first substrate holder has a recess and an elevation.

Abstract: A device and method is described for producing an electrically conductive direct bond between a bonding side of a first substrate and a bonding side of a second substrate. A workspace is included that can be closed, gas-tight, against the environment and can be supplied with a vacuum. The workspace includes a) at least one plasma chamber for modifying at least one of the bonding sides and at least one bonding chamber for bonding the bonding sides, and/or b) at least one combined bonding/plasma chamber for modifying at least one of the bonding sides and for bonding the bonding sides.

Abstract: A device and method is described for producing an electrically conductive direct bond between a bonding side of a first substrate and a bonding side of a second substrate. A workspace is included that can be closed, gas-tight, against the environment and can be supplied with a vacuum. The workspace includes a) at least one plasma chamber for modifying at least one of the bonding sides and at least one bonding chamber for bonding the bonding sides, and/or b) at least one combined bonding/plasma chamber for modifying at least one of the bonding sides and for bonding the bonding sides.

Abstract: A device, a system and a method for bonding two substrates. A first substrate holder has a recess and an elevation.

Abstract: A method and corresponding device for the alignment of a first substrate comprising at least two first alignment marks with a second substrate comprising at least two second alignment marks. By means of a first assignment, the first alignment marks are assigned to at least two first characteristic alignment features of the first substrate in an X-direction and in a Y-direction. By means of a second assignment, the second alignment marks are assigned to at least two second characteristic alignment features of the second substrate in an X-direction and in a Y-direction, and by means of an alignment, the first and second alignment marks are aligned in relation to one another in an X- and Y-direction by means of the first and second characteristic alignment features.

Abstract: A method and corresponding device for the alignment of a first substrate comprising at least two first alignment marks with a second substrate comprising at least two second alignment marks. By means of a first assignment, the first alignment marks are assigned to at least two first characteristic alignment features of the first substrate in an X-direction and in a Y-direction. By by means of a second assignment, the second alignment marks are assigned to at least two second characteristic alignment features of the second substrate in an X-direction and in a Y-direction, and by means of an alignment, the first and second alignment marks are aligned in relation to one another in an X- and Y-direction by means of the first and second characteristic alignment features.

Abstract: A device and method is described for producing an electrically conductive direct bond between a bonding side of a first substrate and a bonding side of a second substrate. A workspace is included that can be closed, gas-tight, against the environment and can be supplied with a vacuum. The workspace includes a) at least one plasma chamber for modifying at least one of the bonding sides and at least one bonding chamber for bonding the bonding sides, and/or b) at least one combined bonding/plasma chamber for modifying at least one of the bonding sides and for bonding the bonding sides.

Abstract: A device and method for producing an electrically conductive direct bond between a bonding side of a first substrate and a bonding side of a second substrate with the following features: a workspace that can be closed, gas-tight, against the environment and can be supplied with a vacuum, the workspace comprises: a) at least one plasma chamber for modifying at least one of the bonding sides and at least one bonding chamber for bonding the bonding sides, and/or b) at least one combined bonding/plasma chamber for modifying at least one of the bonding sides and for bonding the bonding sides.

Abstract: A process for the production of a permanent, electrically conductive connection between a first metal surface of a first substrate and a second metal surface of a second substrate, wherein a permanent, electrically conductive connection is produced, at least primarily, by substitution diffusion between metal ions and/or metal atoms of the two metal surfaces.

Abstract: A process for the production of a permanent, electrically conductive connection between a first metal surface of a first substrate and a second metal surface of a second substrate, wherein a permanent, electrically conductive connection is produced, at least primarily, by substitution diffusion between metal ions and/or metal atoms of the two metal surfaces.