Abstract: A high electron mobility transistor (HEMT) device is disclosed. The HEMT device includes a substrate with epitaxial layers over the substrate that includes a buffer layer having a dopant comprising aluminum, wherein the concentration of aluminum within the buffer layer is between 0.5% and 3%. The epitaxial layer further includes a channel layer over the buffer layer and a barrier layer over the channel layer. A gate contact is disposed on a surface of the epitaxial layers. A source contact and a drain contact are also disposed on the surface of the epitaxial layers, wherein the source contact and the drain contact are spaced apart from the gate contact and each other.

Abstract: A field effect transistor, such as a high electron mobility transistor, comprises a substrate, a buffer region, a backbarrier region, a channel region, a source region, a drain region, and a gate contact. The buffer region is over the substrate and doped with a deep acceptor at a concentration in a range of 2×1016 cm?3 to 1×1018 cm?3. The backbarrier region is over the buffer region and has a thickness in a range of 50 to 5000 Angstroms. The channel region is over the backbarrier region. The source region and the drain region are arranged such that at least a portion of the channel region resides between the source region and the drain region. The gate contact is over the channel region and between the source region and the drain region.

Abstract: A high electron mobility transistor (HEMT) device is disclosed. The HEMT device includes a substrate with epitaxial layers over the substrate that includes a buffer layer having a dopant comprising aluminum, wherein the concentration of aluminum within the buffer layer is between 0.5% and 3%. The epitaxial layer further includes a channel layer over the buffer layer and a barrier layer over the channel layer. A gate contact is disposed on a surface of the epitaxial layers. A source contact and a drain contact are also disposed on the surface of the epitaxial layers, wherein the source contact and the drain contact are spaced apart from the gate contact and each other.

Abstract: A high electron mobility transistor (HEMT) device is disclosed. The HEMT device includes a substrate with epitaxial layers over the substrate that includes a buffer layer having a dopant comprising aluminum, wherein the concentration of aluminum within the buffer layer is between 0.5% and 3%. The epitaxial layer further includes a channel layer over the buffer layer and a barrier layer over the channel layer. A gate contact is disposed on a surface of the epitaxial layers. A source contact and a drain contact are also disposed on the surface of the epitaxial layers, wherein the source contact and the drain contact are spaced apart from the gate contact and each other.

Abstract: A high electron mobility transistor (HEMT) device is disclosed. The HEMT device includes a substrate with epitaxial layers over the substrate that includes a buffer layer having a dopant comprising aluminum, wherein the concentration of aluminum within the buffer layer is between 0.5% and 3%. The epitaxial layer further includes a channel layer over the buffer layer and a barrier layer over the channel layer. A gate contact is disposed on a surface of the epitaxial layers. A source contact and a drain contact are also disposed on the surface of the epitaxial layers, wherein the source contact and the drain contact are spaced apart from the gate contact and each other.