Patents by Inventor Vipindis Pala

Vipindis Pala has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Field effect transistor devices with buried well regions and epitaxial layers
    Patent number: 9240476
    Abstract: A method of forming a transistor device includes providing a drift layer having a first conductivity type and an upper surface, forming first regions in the drift layer and adjacent the upper surface, the first regions having a second conductivity type that is opposite the first conductivity type and being spaced apart from one another, forming a body layer on the drift layer including the source regions, forming spaced apart source regions in the body layer above respective ones of the first regions, forming a vertical conduction region in the body layer between the source regions, the vertical conduction region having the first conductivity type and defining channel regions in the body layer between the vertical conduction region and respective ones of the source regions, forming a gate insulator on the body layer, and forming a gate contact on the gate insulator.
    Type: Grant
    Filed: March 13, 2013
    Date of Patent: January 19, 2016
    Assignee: Cree, Inc.
    Inventors: Vipindis Pala, Lin Cheng, Jason Henning, Anant Agarwal, John Palmour