Abstract: Embodiments provide for an optical modulator, comprising: a lower guide, comprising: a lower hub, made of monocrystalline silicon; and a lower ridge, made of monocrystalline silicon that extends in a first direction from the lower hub; an upper guide, including: an upper hub; and an upper ridge, made of monocrystalline silicon that extends in a second direction, opposite of the first direction, from the upper hub and is aligned with the lower ridge; and a gate oxide layer separating the lower ridge from the upper ridge and defining a waveguide region with the lower guide and the upper guide.

Abstract: Embodiments herein describe providing a decoupling capacitor on a first wafer (or substrate) that is then bonded to a second wafer to form an integrated decoupling capacitor. Using wafer bonding means that the decoupling capacitor can be added to the second wafer without having to take up space in the second wafer. In one embodiment, after bonding the first and second wafers, one or more vias are formed through the second wafer to establish an electrical connection between the decoupling capacitor and bond pads on a first surface of the second wafer. An electrical IC can then be flip chipped bonded to the first surface. As part of coupling the decoupling capacitor to the electrical IC, the decoupling capacitor is connected between the rails of a power source (e.g., VDD and VSS) that provides power to the electrical IC.

Abstract: Techniques for aligning each of a plurality of optical fibers for coupling to a photonic integrated circuit (PIC). Transmission is detected from each respective optical fiber to the PIC using a probe, and the respective optical fiber is aligned based on the detected transmission. Each of the plurality of optical fibers is coupled to the PIC using at least one of: (i) laser splicing, (ii) laser spot welding, or (iii) arc welding.

Abstract: Embodiments described herein include an apparatus comprising a semiconductor-based photodiode disposed on a semiconductor layer, and an optical waveguide spaced apart from the semiconductor layer and evanescently coupled with a depletion region of the photodiode. The photodiode may be arranged as a vertical photodiode or a lateral photodiode.

Abstract: Embodiments herein describe an optical system that includes a photonic integrated circuit (PIC) bonded to a package containing an electrical integrated circuit (EIC). However, this bond can prevent an edge coupler from optically aligning an optical fiber to an edge of the PIC in order to transfer optical signals. To provide room for the edge coupler, the PIC is arranged to overhang the package containing the EIC so that the package does not interfere with the ability of the edge coupler to align with the side or edge of the PIC. In this manner, an optical fiber can be optically aligned (e.g., butt coupled) to the edge of the PIC rather than having to use a grating coupler or some other less efficient optical coupling in order to transfer optical signals between the PIC and the optical fiber.

Abstract: A laser integrated photonic platform to allow for independent fabrication and development of laser systems in silicon photonics. The photonic platform includes a silicon substrate with an upper surface, one or more through silicon vias (TSVs) defined through the silicon substrate, and passive alignment features in the substrate. The photonic platform includes a silicon substrate wafer with through silicon vias (TSVs) defined through the silicon substrate, and passive alignment features in the substrate for mating the photonic platform to a photonics integrated circuit. The photonic platform also includes a III-V semiconductor material structure wafer, where the III-V wafer is bonded to the upper surface of the silicon substrate and includes at least one active layer forming a light source for the photonic platform.

Abstract: An optical apparatus comprises a semiconductor substrate and an optical waveguide emitter. The optical waveguide emitter comprises an input waveguide section extending from a facet of the semiconductor substrate, a turning waveguide section optically coupled with the input waveguide section, and an output waveguide section extending to the same facet and optically coupled with the turning waveguide section. One or more of the input waveguide section, the turning waveguide section, and the output waveguide section comprises an optically active region.

Abstract: An apparatus includes a ribbon, an optical waveguide, and an IC. The ribbon includes a first end. The optical waveguide is disposed within the ribbon and terminates at the first end. The IC includes a curved surface. The first end of the ribbon bends to mate with the curved surface such that the optical waveguide is optically coupled to a corresponding waveguide in the IC.

Abstract: Embodiments herein describe using a double wafer bonding process to form a photonic device. In one embodiment, during the bonding process, an optical element (e.g., a high precision optical element) is optically coupled to an optical device in an active surface layer. In one example, the optical element comprises a nitride layer which can be patterned to form a nitride waveguide, passive optical multiplexer or demultiplexer, or an optical coupler.

Abstract: Embodiments provide for an optical modulator, comprising: a lower guide, comprising: a lower hub, made of monocrystalline silicon; and a lower ridge, made of monocrystalline silicon that extends in a first direction from the lower hub; an upper guide, including: an upper hub; and an upper ridge, made of monocrystalline silicon that extends in a second direction, opposite of the first direction, from the upper hub and is aligned with the lower ridge; and a gate oxide layer separating the lower ridge from the upper ridge and defining a waveguide region with the lower guide and the upper guide.

Abstract: Techniques for aligning each of a plurality of optical fibers for coupling to a photonic integrated circuit (PIC). Transmission is detected from each respective optical fiber to the PIC using a probe, and the respective optical fiber is aligned based on the detected transmission. Each of the plurality of optical fibers is coupled to the PIC using at least one of: (i) laser splicing, (ii) laser spot welding, or (iii) arc welding.

Abstract: Embodiments provide for an optical modulator, comprising: a lower guide, comprising: a lower hub, made of monocrystalline silicon; and a lower ridge, made of monocrystalline silicon that extends in a first direction from the lower hub; an upper guide, including: an upper hub; and an upper ridge, made of monocrystalline silicon that extends in a second direction, opposite of the first direction, from the upper hub and is aligned with the lower ridge; and a gate oxide layer separating the lower ridge from the upper ridge and defining a waveguide region with the lower guide and the upper guide.

Abstract: Techniques for aligning each of a plurality of optical fibers for coupling to a photonic integrated circuit (PIC). Transmission is detected from each respective optical fiber to the PIC using a probe, and the respective optical fiber is aligned based on the detected transmission.

Abstract: Embodiments herein describe an optical system that includes a photonic integrated circuit (PIC) bonded to a package containing an electrical integrated circuit (EIC). However, this bond can prevent an edge coupler from optically aligning an optical fiber to an edge of the PIC in order to transfer optical signals. To provide room for the edge coupler, the PIC is arranged to overhang the package containing the EIC so that the package does not interfere with the ability of the edge coupler to align with the side or edge of the PIC. In this manner, an optical fiber can be optically aligned (e.g., butt coupled) to the edge of the PIC rather than having to use a grating coupler or some other less efficient optical coupling in order to transfer optical signals between the PIC and the optical fiber.

Abstract: Embodiments presented in this disclosure generally relate to optical signal processing. More specifically, embodiments disclosed herein are directed to a semiconductor-insulator-semiconductor capacitor (SISCAP) modulator. One embodiment includes an optical modulator having a capacitive element configured to modulate an optical signal. The capacitive element includes a single-crystal semiconductor layer, a silicon germanium layer, and a dielectric region between the single-crystal semiconductor layer and the silicon germanium layer.

Abstract: Embodiments herein describe using a double wafer bonding process to form a photonic device. In one embodiment, during the bonding process, an optical element (e.g., a high precision optical element) is optically coupled to an optical device in an active surface layer. In one example, the optical element comprises a nitride layer which can be patterned to form a nitride waveguide, passive optical multiplexer or demultiplexer, or an optical coupler.

Abstract: Aspects described herein include an apparatus supporting optical alignment with one or more optical waveguides optically exposed along an edge of a photonic integrated circuit (IC). The apparatus comprises a frame body comprising an upper portion defining a reference surface, and a lateral portion defining an interface for an optical connector connected with one or more optical fibers. The lateral portion comprises one or more optical components defining an optical path through the lateral portion. The one or more optical components are arranged relative to the reference surface such that the one or more optical components align with (i) the one or more optical waveguides along at least one dimension when the reference surface contacts a top surface of an anchor IC, and with (ii) the one or more optical fibers when the optical connector is connected at the interface.

Abstract: Aspects described herein include an apparatus supporting optical alignment with one or more optical waveguides optically exposed along an edge of a photonic integrated circuit (IC). The apparatus comprises a frame body comprising an upper portion defining a reference surface, and a lateral portion defining an interface for an optical connector connected with one or more optical fibers. The lateral portion comprises one or more optical components defining an optical path through the lateral portion. The one or more optical components are arranged relative to the reference surface such that the one or more optical components align with (i) the one or more optical waveguides along at least one dimension when the reference surface contacts a top surface of an anchor IC, and with (ii) the one or more optical fibers when the optical connector is connected at the interface.

Abstract: A thermo-optic phase shifter comprises an optical waveguide comprising a P-type region comprising a first contact, an N-type region comprising a second contact, and a waveguide region disposed between the P-type region and the N-type region and having a raised portion. The thermo-optic phase shifter further comprises one or more heating elements. The one or more heating elements include one or more discrete resistive heating elements or the P-type and N-type regions driven as resistive heating elements.

Abstract: A method includes defining a first waveguide in a first region of an optical device over a first dielectric layer over a silicon on insulator (SOI) substrate of the optical device and disposing a second dielectric layer on the first waveguide and the first dielectric layer of the optical device. The method also includes defining a second region on the second dielectric layer, the first dielectric layer, and the SOI substrate. The second region includes an integrated trench structure defined in the SOI substrate. The method further includes etching the second region to form an etched second region, disposing a third dielectric layer in the etched second region, and disposing a second waveguide on at least the third dielectric layer. The second waveguide is disposed to provide an optical coupling between the second waveguide and the first waveguide.