Patents by Inventor Virgil Q. Turner

Virgil Q. Turner has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5839455
    Abstract: Methods and apparatus are providing for cleansing contaminants from substrates, such as semiconductor wafer handling implements, and thereby reduce the incidence of contamination of semiconductor devices being assembled upon the semiconductor wafers.In one aspect of the invention, a substrate such as a semiconductor cassette or other semiconductor wafer handling implement, is inserted into a chamber that is substantially isolated from a surrounding environment. A pressurized, and optionally purified, cleansing medium is directed against at least one surface of the substrate to dislodge contaminants from the substrate surface. Dislodged contaminants are evacuated with negative pressure from the chamber. In a preferred aspect of the invention, the cleansing medium is an inert gas, such as nitrogen, and is applied to the substrate at a pressure from about 10 p.s.i. to about 100 or more p.s.i.
    Type: Grant
    Filed: April 13, 1995
    Date of Patent: November 24, 1998
    Assignee: Texas Instruments Incorporated
    Inventors: Virgil Q. Turner, William D. Light, Hilario T. Trevino, Richard L. Guldi, Frank Poag, Douglas E. Paradis
  • Patent number: 5551165
    Abstract: Methods are providing for cleansing contaminants from substrates, such as semiconductor wafer handling implements, and thereby reduce the incidence of contamination of semiconductor devices being assembled upon the semiconductor wafers. In one aspect of the invention, a substrate such as a semiconductor cassette or other semiconductor wafer handling implement, is inserted into a chamber that is substantially isolated from a surrounding environment. A pressurized, and optionally purified, cleansing medium is directed against at least one surface of the substrate to dislodge contaminants from the substrate surface. Dislodged contaminants are evacuated with negative pressure from the chamber. In a preferred aspect of the invention, the cleansing medium is an inert gas, such as nitrogen, and is applied to the substrate at a pressure from about 10 p.s.i. to about 100 or more p.s.i.
    Type: Grant
    Filed: April 13, 1995
    Date of Patent: September 3, 1996
    Assignee: Texas Instruments Incorporated
    Inventors: Virgil Q. Turner, William D. Light, Hilario T. Trevino, Richard L. Guldi, Frank Poag, Douglas E. Paradis