Patents by Inventor Virginie Maffini Alvaro

Virginie Maffini Alvaro has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Doped semiconductor layer forming method
    Patent number: 12217964
    Abstract: A method of obtaining a doped semiconductor layer, including the successive steps of: a) performing, in a first single-crystal layer made of a semiconductor alloy of at least a first element A1 and a second element A2, an ion implantation of a first element B which is a dopant for the alloy and of a second element C which is not a dopant for the alloy, to make an upper portion of the first layer amorphous and to preserve the crystal structure of a lower portion of the first layer; and b) performing a solid phase recrystallization anneal of the upper portion of the first layer, resulting in transforming the upper portion of the first layer into a doped single-crystal layer of the alloy.
    Type: Grant
    Filed: November 25, 2020
    Date of Patent: February 4, 2025
    Assignee: Commissariat à l'Énergie Atomique et aux Énergies Alternatives
    Inventors: Virginie Maffini Alvaro, Hubert Bono, Julia Simon
  • DOPED SEMICONDUCTOR LAYER FORMING METHOD
    Publication number: 20210184073
    Abstract: A method of obtaining a doped semiconductor layer, including the successive steps of: a) performing, in a first single-crystal layer made of a semiconductor alloy of at least a first element A1 and a second element A2, an ion implantation of a first element B which is a dopant for the alloy and of a second element C which is not a dopant for the alloy, to make an upper portion of the first layer amorphous and to preserve the crystal structure of a lower portion of the first layer; and b) performing a solid phase recrystallization anneal of the upper portion of the first layer, resulting in transforming the upper portion of the first layer into a doped single-crystal layer of the alloy.
    Type: Application
    Filed: November 25, 2020
    Publication date: June 17, 2021
    Applicant: Commissariat à l'Énergie Atomique et aux Énergies Alternatives
    Inventors: Virginie Maffini Alvaro, Hubert Bono, Julia Simon