Abstract: The invention relates to new methods of enzymatic synthesis of polymers such as polyorganosilicones and polyesters, and new polymers made by these methods.

Abstract: The present invention relates to a dihydropyrimidinone compound of formula (I) wherein X represents O, S, etc. and R? represents alkyl, alkoxy, thioalkyl, thioalkyloxy, phenyl, substituted phenyl, phenyloxy, substituted phenyloxy, amino, monosubstitutedamino, disubstitutedamino, aryl, heteroaryl, aryloxy, heteroaryloxy, halo; R? represents alkoxy, phenyloxy, substituted phenyloxy, aryloxy, heteroaryloxy, halo, NR1R2 and Rn represents OR1, NH2, SR1, NR1R2; R1, R2=H, alkyl, phenyl, aryl, OCOR3, SCOR3, NHCOR3, NR1COR3; R3 represents alkyl, phenyl, aryl, heteroaryl.

Abstract: The invention relates to new methods of enzymatic synthesis of polymers such as polyorganosilicones and polyesters, and new polymers made by these methods.

Abstract: Antioxidant polymers of the present invention comprise repeat units that include one or both of Structural Formulas (I) and (II): wherein: R is —H or a substituted or unsubstituted alkyl, acyl or aryl group; Ring A is substituted with at least one tert-butyl group or substituted or unsubstituted n-alkoxycarbonyl group; Ring B is substituted with at least one —H and at least one tert-butyl group or substituted or unsubstituted n-alkoxycarbonyl group; Rings A and B are each optionally substituted with one or more groups selected from the group consisting of —OH, —NH, —SH, a substituted or unsubstituted alkyl or aryl group, and a substituted or unsubstituted alkoxycarbonyl group; n is an integer equal to or greater than 2; and p is an integer equal to or greater than 0. The invention also includes methods of using and preparing these polymers.

Abstract: Antioxidant polymers of the present invention comprise repeat units that include one or both of Structural Formulas (I) and (II): wherein: R is —H or a substituted or unsubstituted alkyl, acyl or aryl group; Ring A is substituted with at least one tert-butyl group or substituted or unsubstituted n-alkoxycarbonyl group; Ring B is substituted with at least one —H and at least one tert-butyl group or substituted or unsubstituted n-alkoxycarbonyl group; Rings A and B are each optionally substituted with one or more groups selected from the group consisting of —OH, —NH, —SH, a substituted or unsubstituted alkyl or aryl group, and a substituted or unsubstituted alkoxycarbonyl group; n is an integer equal to or greater than 2; and p is an integer equal to or greater than 0. The invention also includes methods of using and preparing these polymers.

Abstract: The following is an examiner's statement of reasons for allowance: an antioxidant polymer and method of preparing, the antioxidant comprising repeat units that include one or both of Structural Formulas (I) and (II) wherein R is —H or a substituted or unsubstituted alkyl, acyl or aryl group; Ring A is substituted with at least one tert-butyl group or substituted or unsubstituted n-alkoxycarbonyl group; Ring B is substituted with at least one —H and at least one tert-butyl group or substituted or unsubstituted n-alkoxycarbonyl group is not taught nor fairly suggested by the prior art or any combination thereof.

Abstract: A method of preparing a phenolic polymer comprising: a) protecting at least one hydroxyl group of a substituted or unsubstituted phenol represented by Structural Formula (XXIX), wherein: R11, R12, R13, R14 and R15 are independently —H, —OH, —NH, —SH, a substituted or unsubstituted alkyl or aryl group, a substituted or unsubstituted alkoxycarbonyl or aryloxycarbonyl group, a substituted or unsubstituted alkoxy group or a saturated or unsaturated carboxylic acid group; or R11, R12, R13, R14 or R15, in conjunction with an adjacent R11, R12, R13, R14 or R15, forms a substituted or unsubstituted alkylene dioxy group; provided that at least one of R11, R12, R13, R14 or R15 is a tert-butyl group 1-ethenyl-2-carboxylic acid or ester thereof, a substituted or unsubstituted alkylene dioxy group or a substituted or unsubstituted n-alkoxycarbonyl group, at least one of R11, R12, R13, R14 or R15 is a hydroxyl group, and at least one of R11, R12, R13, R14 and R15 is —H; with a protecting group, wherein thereby obtaining on

Abstract: Polymers having a main chain having both aromatic units and aliphatic units (with repeating heteroatoms) and a side chain macromonomer are described. Methods of making these polymers using enzymatic synthesis and the applications of these polymers are also described.

Abstract: Antioxidant polymers of the present invention comprise repeat units that include one or both of Structural Formulas (I) and (II): wherein: R is —H or a substituted or unsubstituted alkyl, acyl or aryl group; Ring A is substituted with at least one tert-butyl group or substituted or unsubstituted n-alkoxycarbonyl group; Ring B is substituted with at least one —H and at least one tert-butyl group or substituted or unsubstituted n-alkoxycarbonyl group; Rings A and B are each optionally substituted with one or more groups selected from the group consisting of —OH, —NH, —SH, a substituted or unsubstituted alkyl or aryl group, and a substituted or unsubstituted alkoxycarbonyl group; n is an integer equal to or greater than 2; and p is an integer equal to or greater than 0. The invention also includes methods of using and preparing these polymers.

Abstract: Antioxidant polymers of the present invention comprise repeat units that include one or both of Structural Formulas (I) and (II): wherein: R is —H or a substituted or unsubstituted alkyl, acyl or aryl group; Ring A is substituted with at least one tert-butyl group or substituted or unsubstituted n-alkoxycarbonyl group; Ring B is substituted with at least one —H and at least one tert-butyl group or substituted or unsubstituted n-alkoxycarbonyl group; Rings A and B are each optionally substituted with one or more groups selected from the group consisting of —OH, —NH, —SH, a substituted or unsubstituted alkyl or aryl group, and a substituted or unsubstituted alkoxycarbonyl group; n is an integer equal to or greater than 2; and p is an integer equal to or greater than 0. The invention also includes methods of using and preparing these polymers.

Abstract: The invention relates to new methods of enzymatic synthesis of polymers such as polyorganosilicones and polyesters, and new polymers made by these methods.

Abstract: One group of polymers comprise repeat units of Structural Formula (I) and/or (II): 1

Abstract: The invention relates to new methods of enzymatic synthesis of polymers such as polyorganosilicones and polyesters, and new polymers made by these methods.

Abstract: Antioxidant polymers of the present invention comprise repeat units that include one or both of Structural Formulas (I) and (II): 1

Abstract: A method for laying out input/output (I/O) pairs, each including an I/O cell and a pad, on an integrated circuit die. Size information is obtained for each of a first I/O pair and a second I/O pair. A minimum pad spacing criterion is obtained which specifies a minimum distance between the pad in the first I/O pair and an element of the second I/O pair, and the first I/O pair and the second I/O pair are laid out so as to satisfy the minimum pad spacing criterion. Also provided is a method for laying out pads for input/output (I/O) cells on an integrated circuit die in which size information is obtained for each of a first I/O cell pad and a second I/O cell pad. A minimum pad spacing criterion is obtained, and the first I/O cell pad and the second I/O cell pad are laid out so as to satisfy the minimum pad spacing criterion.

Abstract: Integrated circuit chip (IC) design and fabrication is a complex process requiring many stages including elaborate cell placement processes. The present invention provides a method and apparatus to facilitate the placement of cells on the surface of an integrated circuit device. Specifically, the invention involves placement of one type of cells (such as logic cells, I/O cells or scan cells) apart from other types of cells. The present invention facilitates the placement of such cells by first parsing the netlist to remove all cells other than the specific type of cells that are to be placed.

Abstract: A method for laying out input/output (I/O) pairs, each including an I/O cell and a pad, on an integrated circuit die. Size information is obtained for each of a first I/O pair and a second I/O pair. A minimum pad spacing criterion is obtained which specifies a minimum distance between the pad in the first I/O pair and an element of the second I/O pair, and the first I/O pair and the second I/O pair are laid out so as to satisfy the minimum pad spacing criterion. Also provided is a method for laying out pads for input/output (I/O) cells on an integrated circuit die in which size information is obtained for each of a first I/O cell pad and a second I/O cell pad. A minimum pad spacing criterion is obtained, and the first I/O cell pad and the second I/O cell pad are laid out so as to satisfy the minimum pad spacing criterion.

Abstract: In a PECVD process, the plasma potential is controlled and maintained at a uniform level to confine the formed plasma to the gap area between the electrodes away from the influence of the walls of the discharge chamber. The plasma potential is controlled by operating the system at a high pressure, above about 12 Torr, and monitoring the operation by observing the DC bias on the upper or driven electrode until a positive potential, preferably greater than about 10V, is developed. At this point a symmetrical glow discharge and a controlled plasma exists between the driven electrode and the susceptor electrode, controllable by maintaining the pressure between about 14 and 20 Torr, to reduce plasma damage to the semiconductor body being coated which maximizes yield.

Abstract: A trench mask containing SiO.sub.2 is produced on a substrate (1) of single-crystal silicon. After deposition of a first Si.sub.3 N.sub.4 layer, first Si.sub.3 N.sub.4 spacers (31) are formed by anisotropic etching, and a first trench is etched to a first depth (t.sub.1). After selective removal of passivation layers arising in the first trench etching and after deposition of a second Si.sub.3 N.sub.4 layer, second Si.sub.3 N.sub.4 spacers (41) are formed by anisotropic etching. A second trench is etched to a second depth (t.sub.2), whereby the trench structure (5) is formed to a total depth (t.sub.1 and t.sub.2).

Abstract: In a process for global planarizing of surfaces for integrated semiconductor circuits a locally planarized insulation layer of silicon oxide with one thickness is initially applied on a structured layer to be planarized having another thickness. Photoresist structures are generated thereon as an auxiliary plane inversely to the structured plane lying below. A further well-adhering and planarizing auxiliary layer, preferably formed of spin-on glass, is applied. It must be selected as a function of a following anisotropic back-etching, in such a way that its etching rate is greater than that of the photoresist layer and nearly the same as that of the silicon oxide layer. The photoresist structures remaining after the back etching are removed. A further insulating layer formed of silicon oxide is applied up to the selected insulator thickness.