Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a cut inside a replacement metal gate trench to mitigate n-p proximity effects and methods of manufacture. The structure described herein includes: a first device; a second device, adjacent to the first device; a dielectric material, of the first device and the second device, including a cut within a trench between the first device and the second device; and a common gate electrode shared with the first device and the second device, the common gate electrode provided over the dielectric material and contacting underlying material within the cut.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a cut inside a replacement metal gate trench to mitigate n-p proximity effects and methods of manufacture. The structure described herein includes: a first device; a second device, adjacent to the first device; a dielectric material, of the first device and the second device, including a cut within a trench between the first device and the second device; and a common gate electrode shared with the first device and the second device, the common gate electrode provided over the dielectric material and contacting underlying material within the cut.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a cut inside a replacement metal gate trench to mitigate n-p proximity effects and methods of manufacture. The structure described herein includes: a first device; a second device, adjacent to the first device; a dielectric material, of the first device and the second device, including a cut within a trench between the first device and the second device; and a common gate electrode shared with the first device and the second device, the common gate electrode provided over the dielectric material and contacting underlying material within the cut.

Abstract: One illustrative method disclosed herein includes, among other things, forming a first fin having first and second opposing sidewalls and forming a first sidewall spacer positioned adjacent the first sidewall and a second sidewall spacer positioned adjacent the second sidewall, wherein the first sidewall spacer has a greater height than the second sidewall spacer. In this example, the method further includes forming epitaxial semiconductor material on the fin and above the first and second sidewall spacers.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a cut inside a replacement metal gate trench to mitigate n-p proximity effects and methods of manufacture. The structure described herein includes: a first device; a second device, adjacent to the first device; a dielectric material, of the first device and the second device, including a cut within a trench between the first device and the second device; and a common gate electrode shared with the first device and the second device, the common gate electrode provided over the dielectric material and contacting underlying material within the cut.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a corrosion and/or etch protection layer for contacts and interconnect metallization integration structures and methods of manufacture. The structure includes a metallization structure formed within a trench of a substrate and a layer of cobalt phosphorous (CoP) on the metallization structure. The CoP layer is structured to prevent metal migration from the metallization structure and corrosion of the metallization structure during etching processes.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a corrosion and/or etch protection layer for contacts and interconnect metallization integration structures and methods of manufacture. The structure includes a metallization structure formed within a trench of a substrate and a layer of cobalt phosphorous (CoP) on the metallization structure. The CoP layer is structured to prevent metal migration from the metallization structure and corrosion of the metallization structure during etching processes.

Abstract: A method of forming an amorphous carbon (aC) layer as a barrier layer for preventing etching of metals in a dual damascene metallization process and the resulting device are provided. Embodiments include forming an inter-layer dielectric (ILD) layer over a substrate with the first ILD having recesses for a first metallization layer. Then forming a TaN barrier layer and Co liner in the recesses, filling the recesses with a metal, forming a Co cap layer over the metal and forming a conformal aC layer over the substrate are accomplished. Furthermore, an Nblock layer, an ILD layer and a metal hard mask layer completes the stack on top to the aC layer. Subsequently, the embodiments include etching vias through this stack down to the aC layer, thereby protecting the first metallized layer.

Abstract: The present invention relates generally to semiconductor fabrication lithography and, more particularly, to a method and composition for reducing post-development defects and residues that may remain on a photoresist after development of the photoresist without causing substantial damage to the photoresist. The method may include rinsing the photoresist and the semiconductor device with ozonated acidified conductive water composed of a combination of ozone and a gaseous acid dissolved in deionized water.

Abstract: Cleaning solutions and processes for cleaning semiconductor devices or semiconductor tooling during manufacture thereof generally include contacting the semiconductor devices or semiconductor tooling with an acidic aqueous cleaning solution free of a fluorine containing compound, the acidic aqueous cleaning solution including at least one antioxidant and at least one non-oxidizing acid.

Abstract: Cleaning solutions and processes for cleaning semiconductor devices or semiconductor tooling during manufacture thereof generally include contacting the semiconductor devices or semiconductor tooling with an acidic aqueous cleaning solution free of a fluorine containing compound, the acidic aqueous cleaning solution including at least one antioxidant and at least one non-oxidizing acid.

Abstract: Cleaning solutions and processes for cleaning semiconductor devices or semiconductor tooling during manufacture thereof generally include contacting the semiconductor devices or semiconductor tooling with an acidic aqueous cleaning solution free of a fluorine containing compound, the acidic aqueous cleaning solution including at least one antioxidant and at least one non-oxidizing acid.

Abstract: Cleaning processes for cleaning semiconductor devices or semiconductor tooling during manufacture thereof generally include contacting the semiconductor devices or semiconductor tooling with an antioxidant to form an insoluble adduct followed by solubilizing the adduct with a basic aqueous cleaning solution.

Abstract: A composition includes an organopolysiloxane component (A) comprising at least one of a disiloxane, a trisiloxane, and a tetrasiloxane, and has an average of at least two alkenyl groups per molecule. The composition further includes an organohydrogensiloxane component (B) having an average of at least two silicon-bonded hydrogen atoms per molecule. Components (A) and (B) each independently have at least one of an alkyl group and an aryl group and each independently have a number average molecular weight less than or equal to 1500 (g/mole). The composition yet further includes a catalytic amount of a hydrosilylation catalyst component (C), and titanium dioxide (TiO2) nanoparticles (D). The composition has a molar ratio of alkyl groups to aryl groups ranging from 1:0.25 to 1:3.0. A product of the present invention is the reaction product of the composition, which may be used to make a light emitting diode.

Abstract: An optically reliable high refractive index (HRI) encapsulant for use with Light Emitting Diodes (LED's) and lighting devices based thereon. This material may be used for optically reliable HRI lightguiding core material for polymer-based photonic waveguides for use in photonic-communication and optical-interconnect applications. The encapsulant includes treated nanoparticles coated with an organic functional group that are dispersed in an Epoxy resin or Silicone polymer, exhibiting RI˜1.7 or greater with a low value of optical absorption coefficient ?<0.5 cm?1 at 525 nm. The encapsulant makes use of compositionally modified TiO2 nanoparticles which impart a greater photodegradation resistance to the HRI encapsulant.

Abstract: The present application is directed to the preparation and use of a class of nanoparticles called Quantum Confined Atoms or QCA's. A QCA is a particle of material comprising a plurality of host atoms in a nanoparticle of a size of less than 10 nm with a single atom of a dopant (or activator) confined within. The QCA's have unique luminescent and optical properties and thus can act as a very efficient nanophosphor which generate polarized light and can operate as a laser and a nanomagnet. An anti-agglomeration coating surrounding the nanoparticles can prevent clumping and loss of the enhanced properties.

Abstract: A microchannel phosphor screen for converting radiation, such as X-rays, into visible light. The screen includes a planar surface, which can be formed from glass, silicon or metal, which has etched therein a multiplicity of closely spaced microchannels having diameters of the order of 40 microns or less. Deposited within each of the microchannels is a multiplicity of phosphors which emit light when acted upon by radiation. The dimensions of the microchannel and the phosphors and the relationship between the microchannels and the phosphors is optimized so that the light output compares favorably with lower resolution non microchannel based scintillation screens. A photomultiplier can be integrated with the X-ray detector so as to provide an enhanced output for use with low level X-ray of for cine or fluoroscopy applications.

Abstract: A composite phosphor screen for converting radiation, such as X-rays, into visible light. The screen includes a planar surface, which can be formed from glass, silicon or metal, which has etched therein a multiplicity of closely spaced microchannels having diameters of the order of 10 microns or less. Deposited within each of the microchannels is a multiplicity of phosphors which emit light when acted upon by radiation. A photomultiplier, which may be microchannel based, is integrated with the X-ray detector so as to provide an enhanced output for use with low level X-ray of for cine or fluoroscopy applications. The walls of the microchannels and/or the substrate surfaces include dielectric stack based light reflective coatings.

Abstract: Methodology for providing a smooth, thin, highly reflective coating to the walls of microchannels disposed in a plate or substrate. Such plates are commonly used in image intensifiers and have more recently been used to provide high resolution X-ray imaging screens. In the process silver nitrate solution is reacted so as to provide a silver amine complex. In a first embodiment of the process, the microchannel plates are disposed vertically in a beaker and immersed, without stirring, in a solution including the silver amine complex and a reducing agent. In a second embodiment of the process, a fluid flow of filtered reactant is directed through the microchannels. In each embodiment the walls of the microchannels become plated with a highly reflective (>90%), thin (20-50nm) and smooth coating of metallic silver.

Abstract: A composite phosphor screen for converting radiation, such as X-rays, into visible light. The screen includes a planar surface, which can be formed from glass, silicon or metal, which has etched therein a multiplicity of closely spaced microchannels having diameters of the order of 10 microns or less. Deposited within each of the microchannels is a multiplicity of phosphors which emit light when acted upon by radiation. The walls of the microchannels and/or the substrate surfaces include light reflective coatings so as to reflect the light emitted by the phosphors to the light collecting devices, such as film or an electronic detector. The coatings can be either radiation transparent or filtering/attenuating depending on the particular application.