Abstract: A method of fabricating a micro-mechanical sensor (101) comprising the steps for forming an insulating layer (6) onto the surface of a first wafer (4) bonding a second wafer (2) to the insulating layer (6), patterning and subsequently etching either the first (4) or second wafer (6) such that channels (18,20) are created in either the first (2) or second (4) wafer terminating adjacent the insulating layer (6) and etching the insulating layer (6) to remove portions of the insulating layer (6) below the etched wafer such that those portions of the etched wafer below a predetermined cross section, suspended portions (22), become substantially freely suspended above the un-etched wafer. This method uses Silicon on Insulator technology. Also disclosed is a micro-mechanical gyroscope structure (101) allowing an anisotropic silicon to be used to fabricate a sensor functioning as if fabricated from isotropic silicon.

Abstract: An optical device (300) comprises a multilayer structure, formed by wafer bonding, incorporating in sequence a silicon dioxide layer (304), a buried silicide layer (306), a contact layer (308) and a silicon surface layer (310). The surface layer (310) is selectively etched to form an exposed rib (312). An upper surface of the rib (312) is doped to form an elongate electrode (314) therealong. The surface layer (310) is selectively etched to the contact layer (308) in regions remote from the rib (312) to form via channels (316a, 316b) for making electrical connection to the contact layer (308). The rib (312) forms a waveguide along which radiation propagates. When the electrode (314) is biased relative to the contact layer (308), charge carriers are injected into the rib (312) and induce refractive index changes in a central region (324) thereof where most of the radiation propagates along the rib (312).

Abstract: A method of fabricating a micro-mechanical sensor (101) comprising the steps for forming an insulating layer (6) onto the surface of a first wafer (4) bonding a second wafer (2) to the insulating layer (6), patterning and subsequently etching either the first (4) or second wafer (6) such that channels (18,20) are created in either the first (2) or second (4) wafer terminating adjacent the insulating layer (6) and etching the insulating layer (6) to remove portions of the insulating layer (6) below the etched wafer such that those portions of the etched wafer below a predetermined cross section, suspended portions (22), become substantially freely suspended above the un-etched wafer. This method uses Silicon on Insulator technology. Also disclosed is a micro-mechanical gyroscope structure (101) allowing an anisotropic silicon to be used to fabricate a sensor functioning as if fabricated from isotropic silicon.

Abstract: A method of fabricating a micro-mechanical sensor (101) comprising the steps for forming an insulating layer (6) onto the surface of a first wafer (4) bonding a second wafer (2) to the insulating layer (6), patterning and subsequently etching either the first (4) or second wafer (6) such that channels (18, 20) are created in either the first (2) or second (4) wafer terminating adjacent the insulating layer (6) and etching the insulating layer (6) to remove portions of the insulating layer (6) below the etched wafer such that those portions of the etched wafer below a predetermined cross section, suspended portions (22), become substantially freely suspended above the un-etched wafer. This method uses Silicon on Insulator technology. Also disclosed is a micro-mechanical gyroscope structure (101) allowing an anisotropic silicon to be used to fabricate a sensor functioning as if fabricated from isotropic silicon.