Abstract: A RESURF super-junction device (51) is provided which comprises a plurality of electrodes (53) disposed in a layer of a first material (61) having a first conductivity type. Each of the plurality of electrodes contains a second material (57) of a second conductivity type which is encased in a dielectric material (55).

Abstract: An electronic component includes a semiconductor substrate (110), an epitaxial semiconductor layer (120, 221, 222) over the semiconductor substrate, and a semiconductor region (130, 230) in the epitaxial semiconductor layer. The epitaxial semiconductor layer has an upper surface (123). A first portion (121) of the epitaxial semiconductor layer is located below the semiconductor region, and a second portion (122) of the epitaxial semiconductor layer is located above the semiconductor region. The semiconductor substrate and the first portion of the epitaxial semiconductor layer have a first conductivity type, and the semiconductor region has a second conductivity type. At least one electrically insulating trench (140, 240) extends from the upper surface of the epitaxial semiconductor layer into at least a portion of the semiconductor region. The semiconductor substrate has a doping concentration higher than a doping concentration of the first portion of the epitaxial semiconductor layer.

Abstract: A semiconductor component includes a RESURF transistor (100, 200, 300, 400, 500) that includes a first semiconductor region (110, 210, 310, 410, 510) having a first conductivity type and an electrically-floating semiconductor region (115, 215, 315, 415, 515, 545) having a second conductivity type located above the first semiconductor region. The RESURF transistor further includes a second semiconductor region (120, 220, 320, 420, 520) having the first conductivity type located above the electrically-floating semiconductor region, a third semiconductor region (130, 230) having the first conductivity type located above the second semiconductor region, and a fourth semiconductor region (140, 240, 340, 440, 540) having the second conductivity type located above the second semiconductor region.

Abstract: An embodiment of a method of redistributing power in a semiconductor component includes varying a saturation current between a drain terminal (330) and a source terminal (320) of a field effect transistor (FET) (200, 500). The FET is at least a portion of the semiconductor component. The threshold voltage of the FET is maintained substantially constant across the FET while the drain-to-source saturation current per unit area is varied across the FET. In one embodiment, the drain-to-source saturation current per unit area is varied such that it is lower at a center of the FET than at a periphery of the FET. In particular embodiments, the drain-to-source saturation current per unit area may be varied across the FET by changing one or more of the gate-to-source voltage, the channel length, the channel width, the gate oxide thickness, and the channel mobility across the FET.

Abstract: A semiconductor component includes a first semiconductor region (110, 210) having a first conductivity type and a second semiconductor region (120, 220) above the first semiconductor region and having a second conductivity type. The semiconductor component further comprises a third semiconductor region (130, 230) above the second semiconductor region and having the first conductivity type, a fourth semiconductor region (140, 240) above the third semiconductor region and having the second conductivity type, a fifth semiconductor region (150, 250) above the third semiconductor region and having the first conductivity type, a sixth semiconductor region (160, 260) substantially enclosed within the fifth semiconductor region and having the second conductivity type, and a seventh semiconductor region (170, 270) above the first semiconductor region and having the second conductivity type.

Abstract: A RESURF super-junction device (51) is provided which comprises a plurality of electrodes (53) disposed in a layer of a first material (61) having a first conductivity type. Each of the plurality of electrodes contains a second material (57) of a second conductivity type which is encased in a dielectric material (55).