Abstract: An electrical component is provided by metallizing holes that extend through a glass substrate. The electrical component can be fabricated by forcing a suspension of electrically conductive particles suspended in a liquid medium through the holes. The suspension can be forced into the holes under an air pressure differential such as a vacuum force, a centrifugal force, or an electrostatic force. The liquid medium in the holes can be dried, and the particles can be sintered. The particles can further be packed in the hole. Alternatively or additionally, the particles can be pressed against the outer surfaces of the substrate to produce buttons.

Abstract: An apparatus for simultaneously rinsing and drying front and back surfaces of a workpiece comprises a chuck adapted to spin the workpiece, a plurality of posts coupled to the chuck and adapted to support the workpiece, and first and second mechanical arms. The first mechanical arm is adapted to be positioned between the chuck and the workpiece, and to sweep along at least part of the workpiece back surface. The first mechanical arm comprises at least a first rinsing liquid nozzle, and a first tensioactive vapor nozzle. The second mechanical arm is adapted to be positioned adjacent to the workpiece front surface, and to sweep along at least part of the workpiece front surface. The second mechanical arm comprises at least a second rinsing liquid nozzle, and a second tensioactive vapor nozzle.

Abstract: A method is provided for removing conductive material from a metal layer deposited on a wafer having die level thickness variations on its surface. The method includes contacting the metal layer with a composition capable of planarizing die level thickness variations while using a current having a current density within a range of between about 5 mA/cm2 and about 40 mA/cm2, applying a first current to the wafer having a current density within a range of between about 5 mA/cm2 and about 20 mA/cm2 to remove a first portion of the metal layer to thereby planarize the wafer surface, and administering a second current to the wafer having a current density within a range of between about 20 mA/cm2 and about 40 mA/cm2 to remove a second portion of the metal layer and to leave a third portion of the metal layer on the wafer having a predetermined thickness.

Abstract: Methods and compositions have been provided for removing barrier layer material from a work piece during an electrochemical mechanical polishing process while protecting a metallization layer of the work piece. The electrochemical planarization composition includes at least one complexing agent capable of complexing with the barrier layer material when exposed to a pH outside of a pH range of greater than about pH 2 and less than about pH 10, a corrosion inhibitor, abrasive particles, and a pH adjuster.

Abstract: An apparatus for simultaneously rinsing and drying front and back surfaces of a workpiece comprises a chuck adapted to spin the workpiece, a plurality of posts coupled to the chuck and adapted to support the workpiece, and first and second mechanical arms. The first mechanical arm is adapted to be positioned between the chuck and the workpiece, and to sweep along at least part of the workpiece back surface. The first mechanical arm comprises at least a first rinsing liquid nozzle, and a first tensioactive vapor nozzle. The second mechanical arm is adapted to be positioned adjacent to the workpiece front surface, and to sweep along at least part of the workpiece front surface. The second mechanical arm comprises at least a second rinsing liquid nozzle, and a second tensioactive vapor nozzle.

Abstract: A composition for electrodeposition of a metal on a work piece, which electrodeposition is conducted at an electrodeposition temperature, is provided. The composition comprises a metal salt, a polymer suppressor having a cloud point, an accelerator and an electrolyte. If the cloud point is greater than the electrodeposition temperature, an anion is also present in an amount sufficient to lower the cloud point of the polymer suppressor to a temperature approximately no greater than the electrodeposition temperature.

Abstract: An apparatus and method for performing a rinsing process on a workpiece surface, the apparatus including a platform adapted to seat the workpiece thereon, a chuck connected to the platform and adapted to spin the workpiece during the rinsing process, a mechanical arm adapted to sweep across at least part of the workpiece surface during the rinsing process, first and second rinsing liquid nozzles secured to the mechanical arm, a tensioactive vapor nozzle secured to the arm and disposed between the first and second rinsing liquid nozzles, and first and second flow control elements adapted to separately and independently control rinsing liquid flow rates for the first and second rinsing liquid nozzles, respectively.

Abstract: A method and apparatus are provided for post-CMP cleaning of a semiconductor work piece. The method comprises the steps of subjecting the work piece to a first cleaning composition having one of an acidic pH and a basic pH and subjecting the work piece to a second cleaning composition having an acidic pH, if the first cleaning composition has a basic pH and subjecting the work piece to a second cleaning composition having a basic pH, if the first cleaning composition has an acidic pH.

Abstract: A method and composition for post-CMP wetting of a wafer having a dielectric thin film is provided. The composition is applied to a wafer after it has been exposed to a CMP slurry.

Abstract: Methods and compositions are provided for the chemical mechanical planarization of ruthenium. The method includes polishing the ruthenium layer using a low contact pressure and exposing the ruthenium layer to a planarization composition while polishing. The planarization composition comprises a dispersing medium and a plurality of abrasive particles. The method further includes removing the ruthenium of the ruthenium layer as a ruthenium hydroxide if the pH of the composition is in the range of from about 8 to about 12. The planarization composition may further comprise an oxidizing agent, with the ruthenium removed as a ruthenium hydroxide if the pH of the composition is in the range of from about 2 to about 14. The planarization composition may further comprise a complexing agent, with the ruthenium transformed into an ionic state and removed as a ruthenium complex if the pH of the composition is no greater than about 2.5.

Abstract: Methods for electrodeposition of copper on a noble metal layer of a work piece are provided. An exemplary method includes exposing the noble metal layer to an electrodeposition composition. The electrodeposition composition comprises a copper salt, a suppressor, an accelerator and an electrolyte. The electrodeposition of copper on a surface of the noble metal layer is initiated by application of a predetermined current density to the work piece. The electrodeposition of copper is terminated upon the occurrence of a predetermined event.

Abstract: Methods are provided for planarizing a work piece such as a semiconductor wafer. One such method comprises the steps of providing a semiconductor wafer having an insulating layer on a surface thereof, the insulating layer comprising a field region and a plurality of features. A barrier layer is formed overlying at least the field region and then a layer comprising copper and having a substantially planar upper surface is formed overlying the barrier layer and filling the features in the insulating layer. The layer comprising copper and the barrier layer are then planarized or polished on a single polishing pad to remove the layer comprising copper and the barrier layer from the field region.

Abstract: A composition for electrodeposition of a metal on a work piece, which electrodeposition is conducted at an electrodeposition temperature, is provided. The composition comprises a metal salt, a polymer suppressor having a cloud point, an accelerator and an electrolyte. If the cloud point is greater than the electrodeposition temperature, an anion is also present in an amount sufficient to lower the cloud point of the polymer suppressor to a temperature approximately no greater than the electrodeposition temperature.