Abstract: A light-emitting element includes an anode electrode, a QD layer containing QDs, and a cathode electrode, in which the QDs are Cd-free quantum dots having a core-shell structure including a core containing at least Ag, Ga, and at least one of S and Se, and a shell containing at least Zn, and exhibit fluorescence characteristics with a fluorescence full-width at half-maximum of 40 nm or less and a fluorescence quantum yield percentage of 70% or more.

Abstract: A light-emitting element includes an anode electrode, a cathode electrode, and a QD layer provided between the anode electrode and the cathode electrode, the QD layer containing the QDs. The QDs are AgInxGa1-xSySe1-y-based or ZnAgInxGa1-xSySe1-y-based Cd-free QDs (0?x<1, 0?y?1) and exhibit fluorescence characteristics having a fluorescent half width of 45 nm or less and a fluorescence quantum yield of 35% or more in a green wavelength region to a red wavelength region.

Abstract: An object of the present invention is to provide a method for manufacturing quantum dots capable of containing a large amount of Zn on a surface thereof, and a quantum dot. A method for manufacturing quantum dots of the present invention includes a step of producing a core containing at least Ag, Ga, and S or Ag, Ga, and Se, and a step of coating a surface of the core with a shell, and in the step of coating with the shell, the surface of the core is coated with GaS, and then Zn is added. It is preferable that the surface of the core is coated with ZnS after being coated with GaS. It is preferable that the core and the shell do not contain Cd and In.

Abstract: To provide Cd-free chalcopyrite-based quantum dots with a narrow fluorescence FWHM and a high fluorescence quantum yield. The quantum dots of the present invention contain AgInxGa1-xSySe1-y or ZnAgInxGa1-xSySe1-y (where 0?x<1 and 0?y?1) and exhibit fluorescence properties including a fluorescence FWHM of less than or equal to 45 nm and a fluorescence quantum yield of greater than or equal to 35% in the green wavelength range to the red wavelength range.

Abstract: To provide Cd-free chalcopyrite-based quantum dots with a narrow fluorescence FWHM and a high fluorescence quantum yield. The quantum dots of the present invention contain AgInxGa1-xSySe1-y or ZnAgInxGa1-xSySe1-y (where 0?x<1 and 0?y?1) and exhibit fluorescence properties including a fluorescence FWHM of less than or equal to 45 nm and a fluorescence quantum yield of greater than or equal to 35% in the green wavelength range to the red wavelength range.

Abstract: To provide Cd-free chalcopyrite-based quantum dots with a narrow fluorescence FWHM and a high fluorescence quantum yield. The quantum dots of the present invention contain AgInxGa1-xSySe1-y or ZnAgInxGa1-xSySe1-y (where 0?x<1 and 0?y?1) and exhibit fluorescence properties including a fluorescence FWHM of less than or equal to 45 nm and a fluorescence quantum yield of greater than or equal to 35% in the green wavelength range to the red wavelength range.