Abstract: A method for continuous production of graphene by means of an apparatus. The method includes providing a clean surface on a rotatable substrate and depositing a primary carbon layer onto the surface of the rotatable substrate from a carbon-containing gas via plasma-enhanced chemical vapor deposition. The method further includes continuously growing graphene on the primary carbon layer via plasma-enhanced chemical vapor deposition by addition of the carbon-containing gas to a deposition chamber. The method further includes continuously harvesting the graphene grown on the primary carbon layer while leaving the primary carbon layer on the rotatable substrate, and collecting the graphene removed from the primary carbon layer.

Abstract: An apparatus is for continuous production of graphene. The apparatus has a deposition chamber; a means for introducing a carbon-containing gas into the deposition chamber; a rotatable substrate for growing graphene; a plasma generator; a heating element for heating at least a portion of said apparatus; a pump for evacuating said deposition chamber; and a harvesting system for collecting deposited graphene. The rotatable substrate includes an endless, rotatable surface including a material for accepting deposition of a primary carbon layer prior to graphene growth. A method is for the production of graphene by the apparatus as well as graphene obtainable by such a method.