Patents by Inventor Vitali Tatartchenko

Vitali Tatartchenko has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • C-PLANE SAPPHIRE METHOD AND APPARATUS
    Publication number: 20170226659
    Abstract: A method and apparatus for the production of C-plane single crystal sapphire is disclosed. The method and apparatus may use edge defined film-fed growth techniques for the production of single crystal material exhibiting low polycrystallinity and/or low dislocation density.
    Type: Application
    Filed: March 22, 2017
    Publication date: August 10, 2017
    Inventors: VITALI TATARTCHENKO, JOHN W. LOCHER, Steven A. ZANELLA, Christopher D. JONES, Fery PRANADI
  • C-Plane Sapphire Method
    Publication number: 20140116323
    Abstract: A method and apparatus for the production of C-plane single crystal sapphire is disclosed. The method and apparatus may use edge defined film-fed growth techniques for the production of single crystal material exhibiting low polycrystallinity and/or low dislocation density.
    Type: Application
    Filed: January 6, 2014
    Publication date: May 1, 2014
    Applicant: Saint-Gobain Ceramics & Plastics, Inc.
    Inventors: Vitali Tatartchenko, Christopher D. Jones, Stephen Anthony Zanella, John Walter Locher, Fery Pranadi
  • C-plane sapphire method and apparatus
    Patent number: 8652658
    Abstract: A method and apparatus for the production of C-plane single crystal sapphire is disclosed. The method and apparatus may use edge defined film-fed growth techniques for the production of single crystal material exhibiting low polycrystallinity and/or low dislocation density.
    Type: Grant
    Filed: September 21, 2007
    Date of Patent: February 18, 2014
    Assignee: Saint-Gobain Ceramics & Plastics, Inc.
    Inventors: Vitali Tatartchenko, Christopher D. Jones, Steven Anthony Zanella, John W. Locher, Fery Pranadi
  • SCINTILLATOR CRYSTALS AND METHODS OF FORMING
    Publication number: 20090136731
    Abstract: A scintillator crystal and a method for growing a scintillator crystal are provided which includes an as-grown Edge-defined Film-fed Growth (EFG) single crystal. The as-grown EFG single crystal has a body having a thickness, a width, and a length, such that the thickness?width<length, and the body has a cross-sectional area perpendicular to the length of not less than about 16 mm2.
    Type: Application
    Filed: October 22, 2008
    Publication date: May 28, 2009
    Applicant: SAINT-GOBAIN CERAMICS & PLASTICS, INC.
    Inventors: Vitali Tatartchenko, Steven A. Zanella, John W. Locher, Christopher D. Jones, Damien Pauwels
  • C-PLANE SAPPHIRE METHOD AND APPARATUS
    Publication number: 20080075941
    Abstract: A method and apparatus for the production of C-plane single crystal sapphire is disclosed. The method and apparatus may use edge defined film-fed growth techniques for the production of single crystal material exhibiting low polycrystallinity and/or low dislocation density.
    Type: Application
    Filed: September 21, 2007
    Publication date: March 27, 2008
    Inventors: Vitali Tatartchenko, Christopher D. Jones, Steven Anthony Zanella, John W. Locher, Fery Pranadi
  • Single crystals, method for making single crystals by growth in solution and uses
    Patent number: 6929693
    Abstract: The invention relates to a tetragonal single crystal (1, 11) of composition: Z(H,D)2MO4 where Z is an element or a group of elements, or a mixture of elements and/or of groups of elements chosen from the group K, N(H,D)4, Rb, Ce where M is an element chosen from the group P, As and where (H,D) is hydrogen and/or deuterium comprising an approximately parallelepipedal region of large dimensions, especially one in which the length of each of the edges of the faces, AC1, AC2, AC3, is greater than or equal to 200 mm, in particular greater than or equal to 500 mm, which crystal is obtained by crystal growth from solution, from an approximately parallelepipedal single-crystal seed (2, 22) whose edges of the faces have lengths of AG1, AG2, AG3.
    Type: Grant
    Filed: November 7, 2001
    Date of Patent: August 16, 2005
    Assignee: Saint-Gobain Cristaux & Detecteurs
    Inventor: Vitali Tatartchenko
  • Single crystals, method for making single crystals by growth in solution and uses
    Publication number: 20040011278
    Abstract: The invention relates to a tetragonal single crystal (1, 11) of composition:
    Type: Application
    Filed: May 6, 2003
    Publication date: January 22, 2004
    Inventor: Vitali Tatartchenko