Abstract: A hyperchromatic three-dimensional (3D) imaging system creates multiple planar (2D) images located at different planes which are perceived by the observer's eyes as a 3D image, whereas a new functionality is added. Brightness of the display images is increased by applying narrow diffusion angles for the light scattered by the display. Narrow diffusion angle of the light also allows displays generating images such that each 2D image depends on the angle of observation, and a plurality of 2D images is perceived by the observer's eyes as a 3D image dependent on the angle of observation in a certain interval of the angles of observation. Angular spatial light modulator is employed as a display to generate beams directed in several predefined directions, beams being separately encoded for each direction. Scanning of an angle-maintaining diffuser screen by laser impinging onto the diffuser at different angles can be applied to ensure angle-resolved multi-view functionality.

Abstract: An on-chip miniarray of optically-coupled oxide-confined apertures of vertical cavity surface emitting lasers (VCSELs) is realized by etching holes from the chip surface down to at least one aperture layer. Oxidation of the aperture layer results in electrically-isolated apertures suitable for current injection. The lateral distance between the aperture centers and the shape of the aperture is chosen to result in effective interaction of the neighboring optical modes in the related aperture regions through optical field coupling effect causing the interaction-induced splitting of the wavelengths of the optical modes. At least one aperture has a different surface area due to different spacing of the etched holes. Different aperture sizes result in different wavelengths of the coupled modes. Splitting of the cavity modes in a frequency domain 3-100 GHz extends the modulation bandwidth of the device due to photon-photon interaction effects.

Abstract: An in-plane-emitting semiconductor diode laser employs a surface-trapped optical mode existing at a boundary between a distributed Bragg reflector and a homogeneous medium, dielectric or air. The device can operate in both TM-polarized and TE-polarized modes. The mode exhibits an oscillatory decay in the DBR away from the surface and an evanescent decay in the dielectric or in the air. The active region is preferably placed in the top part of the DBR close to the surface. The mode behavior strongly depends on the wavelength of light, upon increase of the wavelength the mode becomes more and more extended into the homogeneous medium, the optical confinement factor of the mode in the active region drops until the surface-trapped mode vanishes. Upon a decrease of the wavelength, the leakage loss of the mode into the substrate increases. Thus, there is an optimum wavelength, at which the laser threshold current density is minimum, and at which the lasing starts.

Abstract: An in-plane-emitting semiconductor diode laser employs a surface-trapped optical mode existing at a boundary between a distributed Bragg reflector and a homogeneous medium, dielectric or air. The device can operate in both TM-polarized and TE-polarized modes. The mode exhibits an oscillatory decay in the DBR away from the surface and an evanescent decay in the dielectric or in the air. The active region is preferably placed in the top part of the DBR close to the surface. The mode behavior strongly depends on the wavelength of light, upon increase of the wavelength the mode becomes more and more extended into the homogeneous medium, the optical confinement factor of the mode in the active region drops until the surface-trapped mode vanishes. Upon a decrease of the wavelength, the leakage loss of the mode into the substrate increases. Thus, there is an optimum wavelength, at which the laser threshold current density is minimum, and at which the lasing starts.

Abstract: An optoelectronic device employs a surface-trapped TM-polarized optical mode existing at a boundary between a distributed Bragg reflector (DBR) and a homogeneous medium, dielectric or air. The device contains a resonant optical cavity surrounded by two DBRs, and an additional DBR section on top supporting the surface-trapped mode. Selective chemical transformation, like selective oxidation, etching or alloy composition intermixing form a central core and a periphery having different vertical profiles of the refractive index. Therefore, the longitudinal VCSEL mode in the core is non-orthogonal to the surface-trapped mode in the periphery, and the two modes can be transformed into each other. Such transformation allows fabrication of a number of optoelectronic devices and systems like a single transverse mode VCSEL, an integrated optical circuit operating as an optical amplifier, an integrated optical circuit combining a VCSEL and a resonant cavity photodetector, etc.

Abstract: The invention discloses a semiconductor optoelectronic micro-device comprising at least one cavity and at least one multilayer interference reflector. The device represents a micrometer-scale pillar with an arbitrary shape of the cross section. The device includes a vertical optical cavity, a gain medium and means of injection of nonequilibrium carriers into the gain medium, most preferably, via current injection in a p-n-junction geometry. To allow high electric-to-optic power conversion at least one contact is placed on the sidewalls of the micropillar overlapping with at least one doped section of the device. Means for the current path towards the contacts and for the heat dissipation from the gain medium are provided. Arrays of micro-devices can be fabricated on single wafer or mounted on single carrier. Devices with different cross-section of the micropillar emit light at different wavelengths.

Abstract: An oxide-confined vertical cavity surface emitting laser including a distributed Bragg reflector (DBR) wherein the layers of the (DBR) includes a multi-section layer consisting of a first section having a moderately high aluminum composition, an second section which is an insertion having a low aluminum composition, and a third section which is an oxide-confined aperture formed by partial oxidation of a layer having a high aluminum composition (95% and above). A difference in aluminum composition between a high value in the aperture layer and a moderately high value in the first section prevents non-desirable oxidation of the first section from the mesa side while the aperture layer is being oxidized. A low aluminum composition in the second section prevents non-desirable oxidation in the vertical direction of the layer adjacent to the targeted aperture layer.

Abstract: The invention discloses a semiconductor optoelectronic micro-device comprising at least one cavity and at least one multilayer interference reflector. The device represents a micrometer-scale pillar with an arbitrary shape of the cross section. The device includes a vertical optical cavity, a gain medium and means of injection of nonequilibrium carriers into the gain medium, most preferably, via current injection in a p-n-junction geometry. To allow high electric-to-optic power conversion at least one contact is placed on the sidewalls of the micropillar overlapping with at least one doped section of the device. Means for the current path towards the contacts and for the heat dissipation from the gain medium are provided. Arrays of micro-devices can be fabricated on single wafer or mounted on single carrier. Devices with different cross-section of the micropillar emit light at different wavelengths.

Abstract: An optoelectronic device employs a surface-trapped TM-polarized optical mode existing at a boundary between a distributed Bragg reflector (DBR) and a homogeneous medium, dielectric or air. The device contains a resonant optical cavity surrounded by two DBRs, and an additional DBR section on top supporting the surface-trapped mode. Selective chemical transformation, like selective oxidation, etching or alloy composition intermixing form a central core and a periphery having different vertical profiles of the refractive index. Therefore, the longitudinal VCSEL mode in the core is non-orthogonal to the surface-trapped mode in the periphery, and the two modes can be transformed into each other. Such transformation allows fabrication of a number of optoelectronic devices and systems like a single transverse mode VCSEL, an integrated optical circuit operating as an optical amplifier, an integrated optical circuit combining a VCSEL and a resonant cavity photodetector, etc.

Abstract: Optoelectronic device undergoes selective chemical transformation like alloy compositional intermixing forming a non-transformed core region and an adjacent to it periphery where transformation has occurred. Activated by selective implantation or diffusion of impurities like Zinc or Silicon, implantation or diffusion of point defects, or laser annealing, transformation results in a change of the refractive index such that the vertical profile of the refractive index at the periphery is distinct from that in the core. Therefore the optical modes of the core are no longer orthogonal to the modes of the periphery, are optically coupled to them and exhibit lateral leakage losses to the periphery. High order transverse optical modes associated to the same vertical optical mode have higher lateral leakage losses to the periphery than the fundamental transverse optical mode, thus supporting single transverse mode operation of the device.

Abstract: Optical beam quality of an optoelectronic device is improved by suppression of high-order transverse optical modes by their resonant interaction with the continuum of modes in the surrounding regions, such continuum being realized by replacement of one or several layers by layers having a lower refractive index. In particular, selective oxidation of GaAlAs-based vertical cavity surface emitting laser results in (Ga)AlO layers surrounding the aperture and having a lower refractive index than the original (Ga)AlAs layers. The continuum of optical modes originates due to the modification of the optical field in the areas surrounding the aperture caused by the low index insertions positioned to result in enhancement of the optical field in their vicinity.

Abstract: A laser system for generation of three-dimensional (3D) colored images based on laser sources generating light at a plurality of wavelengths including basic color range (red, green and blue) that illuminate a two-dimensional display, at a given color range wherein a plurality of 2D images formed at different depths by image light impinges on a first optical element, with wavelength-sensitive focal length. All images of the given colored range are perceived by the human's eyes as a single 3D image of this color range. 3D images in red, green and blue that are formed at different positions, are fused by a second optical element, with adjustable focal length. As the light is switched between red, green and blue color ranges, the adjustable focal length is adjusted to compensate a change of the focal length of the first element, so the human's eyes see a fully colored 3D image.

Abstract: A method for fabrication of three-dimensional nanostructures on top of the surface of a first solid state material is disclosed, which includes steps of (i) deposition of a layer of a second solid state material forming a stable layer-like coverage of the surface, (ii) the subsequent deposition of a third solid state material, having a stronger binding energy with the first solid state material than the second solid state material, (iii) wherein the third solid state material replaces the second solid state material forming an interface with the first material and thus reduces the energy of the system, and (iv) where the resulting excess second solid state material forms three-dimensional nanostructures. The structure can be covered with another (fourth) solid state material, which eventually can be the same as the first material or a different one, and the three dimensional nanostructures form capped quantum dots or quantum wires.

Abstract: A method for fabrication of three-dimensional nanostructures on top of the surface of a first solid state material is disclosed, which includes steps of (i) deposition of a layer of a second solid state material forming a stable layer-like coverage of the surface, (ii) the subsequent deposition of a third solid state material, having a stronger binding energy with the first solid state material than the second solid state material, (iii) wherein the third solid state material replaces the second solid state material forming an interface with the first material and thus reduces the energy of the system, and (iv) where the resulting excess second solid state material forms three-dimensional nanostructures. The structure can be covered with another (fourth) solid state material, which eventually can be the same as the first material or a different one, and the three dimensional nanostructures form capped quantum dots or quantum wires.

Abstract: Optical beam quality of an optoelectronic device is improved by suppression of high-order transverse optical modes by their resonant interaction with the continuum of modes in the surrounding regions, such continuum being realized by replacement of one or several layers by layers having a lower refractive index. In particular, selective oxidation of GaAlAs-based vertical cavity surface emitting laser results in (Ga)AlO layers surrounding the aperture and having a lower refractive index than the original (Ga)AlAs layers. The continuum of optical modes originates due to the modification of the optical field in the areas surrounding the aperture caused by the low index insertions positioned to result in enhancement of the optical field in their vicinity.

Abstract: An optoelectronic semiconductor device is disclosed wherein the device is a vertical-cavity surface-emitting laser or a photodiode containing a section, the top part of which is electrically isolated from the rest of the device. The electric isolation can be realized by etching a set of holes and selective oxidation of AlGaAs layer or layers such that the oxide forms a continuous layer or layers everywhere beneath the top surface of this section. Alternatively, a device can be grown epitaxially on a semi-insulating substrate, and a round trench around a section of the device can be etched down to the semi-insulating substrate thus isolating this section electrically from the rest of the device. Then if top contact pads are deposited on top of the electrically isolated section, the pads have a low capacitance, and a pad capacitance below two hundred femto-Farads, and the total capacitance of the device below three hundred femto-Farads can be reached.

Abstract: An optoelectronic semiconductor device is disclosed wherein the device is a vertical-cavity surface-emitting laser or a photodiode containing a section, the top part of which is electrically isolated from the rest of the device. The electric isolation can be realized by etching a set of holes and selective oxidation of AlGaAs layer or layers such that the oxide forms a continuous layer or layers everywhere beneath the top surface of this section. Alternatively, a device can be grown epitaxially on a semi-insulating substrate, and a round trench around a section of the device can be etched down to the semi-insulating substrate thus isolating this section electrically from the rest of the device. Then if top contact pads are deposited on top of the electrically isolated section, the pads have a low capacitance, and a pad capacitance below two hundred femto-Farads, and the total capacitance of the device below three hundred femto-Farads can be reached.

Abstract: An oxide-confined vertical cavity surface emitting laser including a distributed Bragg reflector (DBR) wherein the layers of the (DBR) includes a multi-section layer consisting of a first section having a moderately high aluminum composition, an second section which is an insertion having a low aluminum composition, and a third section which is an oxide-confined aperture formed by partial oxidation of a layer having a high aluminum composition (95% and above). A difference in aluminum composition between a high value in the aperture layer and a moderately high value in the first section prevents non-desirable oxidation of the first section from the mesa side while the aperture layer is being oxidized. A low aluminum composition in the second section prevents non-desirable oxidation in the vertical direction of the layer adjacent to the targeted aperture layer.

Abstract: A laser system for generation of three-dimensional (3D) colored images is based on semiconductor laser sources generating laser light at a plurality of wavelengths. The laser source for each basic color range (red, green and blue) is formed on a single chip. The chip can be an array of the distributed feedback lasers or an array of distributed Bragg reflector lasers, each of which generates laser light at its own wavelength, or a COMB laser generating laser light at a plurality of wavelengths. All light illuminates a two-dimensional (2D) display, and the light transmitted through the display or reflected by the display at a given color range impinges on an optical unit, containing a first optical element, e.g., a lens or a mirror, the focal length of which is wavelength-sensitive. Light at different wavelengths forms 2D images at different depths.

Abstract: Optoelectronic device undergoes selective chemical transformation like alloy compositional intermixing forming a non-transformed core region and an adjacent to it periphery where transformation has occurred. Activated by selective implantation or diffusion of impurities like Zinc or Silicon, implantation or diffusion of point defects, or laser annealing, transformation results in a change of the refractive index such that the vertical profile of the refractive index at the periphery is distinct from that in the core. Therefore the optical modes of the core are no longer orthogonal to the modes of the periphery, are optically coupled to them and exhibit lateral leakage losses to the periphery. High order transverse optical modes associated to the same vertical optical mode have higher lateral leakage losses to the periphery than the fundamental transverse optical mode, thus supporting single transverse mode operation of the device.