Patents by Inventor Vitaly V. Zadde

Vitaly V. Zadde has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor photovoltaic generator and method of fabricating thereof
    Patent number: 4174978
    Abstract: A semiconductor photovoltaic generator is proposed which comprises a plurality of photovoltaic converters interconnected in series along their opposite surfaces by current-collecting contacts to form a monolithic structure. Every photovoltaic converter is provided with a p-n junction between the base and inverse regions. The photo-active face of the generator is made as a staircase-type structure. The area of every step is inversely proportional to the intensity of incident radiation and the width of the step is about equal to, or smaller than, the diffusion distance of minority carriers in the base region.
    Type: Grant
    Filed: May 11, 1978
    Date of Patent: November 20, 1979
    Inventors: Nikolai S. Lidorenko, Vladimir M. Evdokimov, Vitaly V. Zadde, Alexandr I. Kozlov, Stanislav V. Ryabikov, Valery N. Potapov, Dmitry S. Strebkov, Tatiana I. Surianinova, Boris A. Chubrikov, Valentina V. Zatravina, Boris V. Korolev, Viktor F. Kulikov, Larisa L. Zhuravleva, Vadim A. Unishkov, Anatoly A. Dormidontov, Viktor I. Moiseev, Ljubov P. Kudeshova
  • Radiation hardened semiconductor photovoltaic generator
    Patent number: 4151005
    Abstract: The semiconductor photovoltaic generator comprises one or several photovoltaic converters, each of which is provided with a rectifying barrier, which separates its base region from the inversion region, and with at least two current collector contacts, one of which being connected to the base region and the other being connected to the inversion region. The operating surface of the semiconductor photovoltaic generator is covered with a protection layer which receives the direct incident radiation and passes the photoactive part of the spectrum thereof to the operating surface of the semiconductor photovoltaic generator. The protection layer comprises elements transparent to the photoactive part of the incident radiation and intermediate metal layers to protect the photovoltaic converter material from the radiation effects which are liable to damage the semiconductor and lower the performance of the semiconductor photovoltaic generator.
    Type: Grant
    Filed: March 18, 1977
    Date of Patent: April 24, 1979
    Inventors: Dmitry S. Strebkov, Vitaly V. Zadde, Vadim A. Unishkov, Tatyana A. Litsenko, Arkady P. Landsman, deceased, by Olga V. Nekljudova, administratrix