Abstract: In a described example, an apparatus includes: a package substrate having a die mount surface; semiconductor die flip chip mounted to the package substrate on the die mount surface, the semiconductor die having post connects having proximate ends on bond pads on an active surface of the semiconductor die, and extending to distal ends away from the active surface of the semiconductor die and connected to the package substrate by solder joints; a thermal interposer comprising a thermally conductive material positioned over and in thermal contact with a backside surface of the semiconductor die; and mold compound covering a portion of the package substrate, a portion of the thermal interposer, the semiconductor die, and the post connects, the thermal interposer having a surface exposed from the mold compound.

Abstract: In examples, a method of manufacturing a semiconductor package comprises providing a lead frame having multiple conductive pins coupled thereto; positioning the lead frame within a mold chase and applying a strip of mold compound to the multiple conductive pins along a length of the lead frame; trimming connections between the lead frame and the multiple conductive pins; bending the multiple conductive pins; trimming the strip of mold compound to singulate the multiple conductive pins from each other and from the lead frame to form singulated conductive pins; coupling a singulated conductive pin from among the singulated conductive pins to a substrate such that a portion of the strip of mold compound coupled to the singulated conductive pin is in contact with the substrate and such that a segment of the singulated conductive pin extends vertically in a plane that is orthogonal to the substrate; coupling a semiconductor die to the substrate; and covering the substrate, the semiconductor die, the portion of the

Abstract: An electronic device includes a package structure, a lead, a heat slug, a semiconductor die, and a bond wire. The package structure has opposite first and second sides, and opposite third and fourth sides spaced along a first direction. The heat slug has a first portion partially exposed outside the second side of the package structure, and a second portion with slots extending inwardly along the first direction and fins between respective pairs of the slots, where the fins are enclosed by the package structure and spaced along an orthogonal second direction. The semiconductor die is attached to the heat slug, and the bond wire has a first end connected to the lead and a second end connected to a circuit of the semiconductor die.

Abstract: An electronic device includes a multilevel ceramic body, first, second, and third plates, and first and second semiconductor dies, with the multilevel ceramic body having opposite first and second sides, a first and second openings in the first side, a third opening in the second side, and a ceramic separator structure defining first and second interior portions between the first and second openings. The first plate is attached to the first side and covers the first opening, the second plate is attached to the first side and covers the second opening, the third plate is attached to the second side and covers the third opening, the first semiconductor die is in the first interior portion, and the second semiconductor die is in the second interior portion of the ceramic body.

Abstract: An electronic device includes a conductive lead, a semiconductor die, a package structure enclosing the semiconductor die and a portion of the conductive lead, and a non-conductive die attach film extending between the conductive lead and the semiconductor die and having a thickness less than 50 ?m. A method of fabricating an electronic device includes singulating portions of a non-conductive die attach film on a carrier, partially singulating prospective die areas from a front side of a wafer, removing wafer material from a back side of the wafer to separate a semiconductor die from the wafer, and attaching a backside the semiconductor die to a singulated portion of the non-conductive die attach film on the carrier.

Abstract: A method of fabricating an electronic device includes forming an embedded die frame having a cavity and a routing structure, a semiconductor die in the cavity with a gallium nitride layer on the routing structure, and a heat spreader having a thermally conductive insulator layer and a metal plate, the thermally conductive insulator layer having a first side that faces the embedded die frame and an opposite second side that faces away from the embedded die frame, with a portion of the first side of the thermally conductive insulator layer extending over a side of a silicon substrate of the semiconductor die, and the metal plate on the second side of the thermally conductive insulator layer.

Abstract: An electronic device includes a substrate having first and second conductive traces, a semiconductor die having a transistor with a first terminal and a second terminal, and first and second metal clips. The first metal clip has a first end portion coupled to the first terminal of the transistor, and a second end portion coupled to the first conductive trace of the substrate. The second metal clip has a first end portion coupled to the second terminal of the transistor and a second end portion coupled to the second conductive trace of the substrate, and a middle portion of the second metal clip is spaced apart from and at least partially overlying a portion of the first metal clip.

Abstract: An example microelectronic device package includes: a substrate, including core trace level conductor layers on opposite sides of a planar dielectric core, and prepreg layers of resin impregnated glass cloth over the trace level conductor layers on the opposite sides of the planar dielectric core. A layer of resin thermoset film is formed over one of the prepreg layers, the layer of resin thermoset film cured to form a solid dielectric film layer. Film layer conductive vias extend through the solid dielectric film layer. A surface level conductor layer is formed over the solid dielectric film layer on a surface of the solid dielectric film layer. A first semiconductor die and a second die are mounted on the surface of the solid dielectric film layer.

Abstract: An electronic device includes a multilevel ceramic body, first, second, and third plates, and first and second semiconductor dies, with the multilevel ceramic body having opposite first and second sides, a first and second openings in the first side, a third opening in the second side, and a ceramic separator structure defining first and second interior portions between the first and second openings. The first plate is attached to the first side and covers the first opening, the second plate is attached to the first side and covers the second opening, the third plate is attached to the second side and covers the third opening, the first semiconductor die is in the first interior portion, and the second semiconductor die is in the second interior portion of the ceramic body.

Abstract: An electronic device includes an embedded die frame having a cavity and a routing structure, a semiconductor die in the cavity with a gallium nitride layer on the routing structure, and a heat spreader having a thermally conductive insulator layer and a metal plate, the thermally conductive insulator layer having a first side that faces the embedded die frame and an opposite second side that faces away from the embedded die frame, with a portion of the first side of the thermally conductive insulator layer extending over a side of a silicon substrate of the semiconductor die, and the metal plate on the second side of the thermally conductive insulator layer.

Abstract: An electronic device includes a substrate having first and second conductive traces, a semiconductor die having a transistor with a first terminal and a second terminal, and first and second metal clips. The first metal clip has a first end portion coupled to the first terminal of the transistor, and a second end portion coupled to the first conductive trace of the substrate. The second metal clip has a first end portion coupled to the second terminal of the transistor and a second end portion coupled to the second conductive trace of the substrate, and a middle portion of the second metal clip is spaced apart from and at least partially overlying a portion of the first metal clip.

Abstract: This description relates generally to semiconductor devices and processes. A method for forming a packaged semiconductor package can include attaching a front side of a metal layer to a die pad of a leadframe that includes conductive terminals, so a periphery portion of the metal layer extends beyond a periphery pad surface of the die pad, and a portion of a half-etched cavity on the front side of the metal layer is located near the periphery pad surface of the die pad. The method further includes attaching a semiconductor device to the die pad and encapsulating the semiconductor device, the front side of the metal layer, a portion of a back side of the metal layer, and a portion of the conductive terminals to form a packaged semiconductor device.

Abstract: A wafer chip scale package (WCSP) comprises first and second dies in differing voltage domains and an isolation material between the first and second dies and contacting multiple surfaces of each of the first and second dies. The package also comprises a first resin material contacting multiple surfaces of the isolation material, with the isolation material between the resin material and the first and second dies. The package also comprises a fiberglass material contacting a surface of the resin material and a second resin material contacting a surface of the fiberglass material. The package also comprises first and second conductive structures coupled to the first and second dies, respectively. The package also includes a passivation material contacting the first and second dies and the first and second conductive structures.

Abstract: An example includes: a package substrate having a die pad with a device side surface and a thermal pad on an opposite side surface; a thermal dissipation structure mounted to the die pad, the thermal dissipation structure including a thermally conductive insulator core and thermal conductors on a device side surface and on a substrate mount surface opposite the device side surface; at least one semiconductor device die mounted to the device side surface of the thermal dissipation structure; electrical connections formed between leads on the package substrate and bond pads on the at least one semiconductor device die; and mold compound covering the electrical connections, the at least one semiconductor device, and portions of the package substrate, portions of the leads of the package substrate forming terminals, and the thermal pad exposed from the mold compound and forming a thermal pad for a semiconductor device package.

Abstract: An electronic device includes a multilevel ceramic body, first, second, and third plates, and first and second semiconductor dies, with the multilevel ceramic body having opposite first and second sides, a first and second openings in the first side, a third opening in the second side, and a ceramic separator structure defining first and second interior portions between the first and second openings. The first plate is attached to the first side and covers the first opening, the second plate is attached to the first side and covers the second opening, the third plate is attached to the second side and covers the third opening, the first semiconductor die is in the first interior portion, and the second semiconductor die is in the second interior portion of the ceramic body.

Abstract: An electronic device includes a package structure, a lead, a heat slug, a semiconductor die, and a bond wire. The package structure has opposite first and second sides, and opposite third and fourth sides spaced along a first direction. The heat slug has a first portion partially exposed outside the second side of the package structure, and a second portion with slots extending inwardly along the first direction and fins between respective pairs of the slots, where the fins are enclosed by the package structure and spaced along an orthogonal second direction. The semiconductor die is attached to the heat slug, and the bond wire has a first end connected to the lead and a second end connected to a circuit of the semiconductor die.

Abstract: An electronic device includes a substrate having first and second conductive traces, a semiconductor die having a transistor with a first terminal and a second terminal, and first and second metal clips. The first metal clip has a first end portion coupled to the first terminal of the transistor, and a second end portion coupled to the first conductive trace of the substrate. The second metal clip has a first end portion coupled to the second terminal of the transistor and a second end portion coupled to the second conductive trace of the substrate, and a middle portion of the second metal clip is spaced apart from and at least partially overlying a portion of the first metal clip.

Abstract: Among the various aspects of the present disclosure is the provision of treatments, monitoring treatment or progression, or methods for detecting utDNA in a subject having or suspected of having a urinary tract-associated cancer.

Abstract: In examples, a method of manufacturing a semiconductor package comprises providing a lead frame having multiple conductive pins coupled thereto; positioning the lead frame within a mold chase and applying a strip of mold compound to the multiple conductive pins along a length of the lead frame; trimming connections between the lead frame and the multiple conductive pins; bending the multiple conductive pins; trimming the strip of mold compound to singulate the multiple conductive pins from each other and from the lead frame to form singulated conductive pins; coupling a singulated conductive pin from among the singulated conductive pins to a substrate such that a portion of the strip of mold compound coupled to the singulated conductive pin is in contact with the substrate and such that a segment of the singulated conductive pin extends vertically in a plane that is orthogonal to the substrate; coupling a semiconductor die to the substrate; and covering the substrate, the semiconductor die, the portion of the

Abstract: A multi-chip isolation (ISO) device package includes a leadframe including leads, an interposer substrate including a top copper layer and a bottom metal layer, with a dielectric layer in-between. A first IC die and a second IC die include circuitry including a transmitter or a receiver, and first and second bond pads are both attached top side up in the package. A laminate transformer is attached to the top copper layer positioned lateral to the IC die. Bondwires wirebond the first bond pads to first pads on the laminate transformer and to a first group of the leads or the lead terminals, and bondwires wirebond the second bond pads to second pads on the laminate transformer and to a second group of the leads or the lead terminals. A mold compound provides encapsulation.